GOFORD-G4N60K
| Part # | GOFORD-G4N60K |
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GOFORD
G
5
4
N
N
6
6
0
0K
Features
Application
600
V
,
4
A
High frequency switching mode power supply
Uninterruptible Power Supply (UPS)
Electronic ballast
R
DS(ON)
= 2.
0
Ω (T
yp.) @ V
GS
= 10V
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
Package
TO-252
Ordering Information
Part Number
Marking
Case
Packaging
G4N60K
TO-252
4N60A
2500pcs/Reel
T
C
=25
℃
unless otherwise specified
Absolute Maximum Ratings
Max.
Symbol
Parameter
Units
TO-252
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
GSS
600
± 30
V
V
T
C
= 25
℃
4*
A
I
D
Continuous Drain Current
T
C
= 100
℃
2.78*
16*
A
I
DM
Pulsed Drain Current
note1
A
E
AS
dv/dt
Single Pulsed Avalanche Energy
note2
Peak Diode Recovery Energy
note3
Power Dissipation
180
mJ
V/ns
W
4.8
T
C
= 25
℃
T
C
> 25
℃
44.6
P
D
Linear Derating Factor
0.357
2.8
W/
℃
℃
/W
℃
R
θ
JC
Thermal Resistance, Junction to Case
T
J
, T
STG
Operating and Storage
T
e
mperature Range
-55 to +150
*Drain current limited by maximum junction temperature
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GOFORD
G4N60K
Electrical Characteristics
T
C
=25
℃
unless otherwise specified
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
= 0
V
,
I
D
=
250μA
Reference to 25
℃
,
I
D
=
250μA
600
–
–
–
–
V
△
V
(BR)DSS
Breakdown Voltage
T
e
mperature
0.65
V/
℃
/
△
T
J
I
DSS
Coefficient
V
DS
= 600
V
,
V
GS
= 0V
V
DS
= 480
V
, T
C
= 125
℃
V
DS
= 0
V
,
V
GS
= ±30V
–
–
–
–
–
–
1
μA
μA
nA
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
10
I
GSS
±100
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
note4
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
=10
V
,
I
D
= 2A
V
DS
=30
V
,
I
D
= 2A
2
–
3
4
2.3
–
V
Ω
S
Static Drain-Source On-Resistance
Forward Transconductance
2.0
5.5
–
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
511
56.6
5.55
15.3
2.45
6.56
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
= 25
V
,
V
GS
= 0
V
,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
T
o
tal Gate Charge
VDD = 480
V
,
I
D = 4A,
V
GS
= 10V
Q
gs
Q
gd
Gate-Source Charge
Gate-
Drain(“Miller”) Charge
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
t
d(off)
t
f
–
–
–
–
11.3
14.7
37.6
10.4
–
–
–
–
ns
ns
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 300
V
,
I
D
= 4A,
RG
= 10Ω, V
GS = 10V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
–
–
–
–
–
–
–
4
16
1.5
–
A
A
I
SM
V
SD
t
rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
GS
= 0
V
,
I
S
= 2A
V
GS
= 0
V
,
I
F
= 4A,
di/dt
=100A/μs
–
V
315
1.83
ns
uC
Q
rr
Reverse Recovery Charge
–
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10mH, I
AS
= 6A, V
DD
= 50
V
,
R
G
= 25Ω, Starting T
J
= 25°C
3. I
SD
≤
4
A, di/dt ≤ 200A/μs, V
DD
≤ B
VDSS
, Starting T
J
= 25°C
4. Pulse width
≤ 300μs; duty cycle ≤
2%.
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GOFORD
G4N60K
Typical Performance Characteristics
9
6
3
0
8
PULSED TEST
V
DS
= 30V
V
GS
= 10.0V
7.5V
25
℃
5.0V
4.5V
4.0V
3.5V
6
4
2
0
0
10
20
30
0
2
4
6
8
10
VGS,Gate-to-Source Voltage,V
VDS,Drain-to-Source Voltage,V
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
3.1
PULSED TEST
PULSED TEST
V
GS
= 0V
10
2.9
2.7
2.5
2.3
2.1
1.9
1.7
V
GS
= 10V
150
℃
25
℃
1
0.1
0
2
4
6
8
0.3
0.5
0.7
0.9
1.1
1.3
I
D
,Drain Current,A
VSD,Source-to-Drain Voltage,V
Figure 3. Drain-to-Source On Resistance vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage vs.
Source Current and Temperature
10
1000
C
iss
100
V
DS
= 480V
V
DS
= 300V
V
DS
= 120V
8
6
4
C
oss
10
1
f = 1MHz
C
iss
= C
gs
+C
gd
C
oss
= C
ds
+C
gd
C
rss
= C
gd
2
C
rss
I
D
= 4A
0
0.1
1
10
100
0
2
4
6
8
10
12
14
16
VDS,Drain-to-Source Voltage,V
Q
G
,Total Gate Charge,nC
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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GOFORD
G4N60K
3
2.5
2
1.2
1.1
1
PULSED TEST
V
GS
= 10V
I
D
= 2A
1.5
1
0.9
0.8
0.5
0
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
,Junction Temperature(
℃
)
T
J
,Junction Temperature(
℃
)
Figure 7. Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8. Normalized On Resistance vs.
Junction Temperature
5
4
3
2
1
0
100
10μs
10
100μs
1ms
10ms
1
0.1
DC
Operation in This Area
is Limited by R
DS(on)
SINGLE PULSE
T
C
=25
℃
0.01
1
10
100
1000
0
25
50
75
100
125
150
T
C
,Case Temperature,
℃
VDS,Drain-to-Source Voltage,V
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
Figure 9. Maximum Safe Operating Area
1
D=0.50
0.20
0.10
0.05
0.02
0.1
0.01
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1.Duty Factor D = t1/t2
2.Peak Tj = Pdm x Zthjc + Tc
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
t,Pulse Duration,s
1.0E-01
1.0E+00
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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GOFORD
G4N60K
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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GOFORD
G4N60K
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)
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GOFORD
G4N60K
TO-252 package information
E
b3
c
E1
A2
b
e
L
(L1)
COMMON DIMENSIONS
mm
SYMBOL
MIN
NOM
MAX
A
A1
A2
b
2.20
0.00
0.97
0.68
5.20
0.43
5.98
2.30
–
2.40
0.20
1.17
0.90
5.50
0.63
6.22
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
–
–
1.80
0.88
0.50
1.65
0°
1.28
1.00
1.95
8°
–
TEL;0755-29961262 FAX;0755-29961466
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