GOFORD-G50N03D5
| Part # | GOFORD-G50N03D5 |
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G50N03D5
N-Channel Enhancement Mode Power MOSFET
Description
The G50N03D5 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of
applications.
General Features
Schematic diagram
⚫
V
DS
30V
50A
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 10V)
< 4.5mQ
⚫
R
DS(ON)
(at V
GS
= 4.5V)
⚫
100% Avalanche Tested
⚫
RoHS Compliant
< 8mQ
Marking and pin assignment
Application
⚫
Power switch
⚫
DC
/
D
C converters
DFN5*6-8L
Marking
Device
Package
DFN5*6-8L
Packaging
G50N03D5
G50N03
5000
p
cs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
30
V
V
DS
I
D
I
DM
V
GS
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
50
A
A
V
(note1)
200
±20
20
Power Dissipation
W
P
D
Single pulse avalanche energy
（
note2
）
81
mJ
E
AS
Operating Junction and Storage Temperature Range
Thermal Resistance
Parameter
-55 To 150
ºC
T
J
, T
stg
Symbol
Value
Unit
ºC/W
ºC/W
78
6
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
R
thJA
R
thJC
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.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
G50N03D5
Specifications
T
J
= 25ºC, unless otherwisenoted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
30
—
V
—
V
(BR)DSS
—
—
uA
nA
V
1
Zero Gate Voltage Drain Current
Gate-Source Leakage
I
DSS
I
GSS
V
DS
= 30V, V
GS
= 0V, T
J
= 25ºC
V
GS
=
±
20V
±
100
2.4
4.5
8
—
—
Gate-Source Threshold Voltage
V
DS
= V
GS
, I
D
= 250µA
1.1
1.6
V
GS(th)
3.2
5.9
35
V
GS
= 10V, I
D
= 20A
—
—
—
mΩ
S
R
DS(on)
Drain-Source On-Resistance
V
GS
= 4.5V, I
D
= 20A
V
DS
= 5V,I
D
= 20A
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
1661
338
316
38.4
5.8
7.9
7
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 15V,
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
f = 1.0MHz
V
DD
= 15V,
I
D
= 20A,
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
V
GS
= 10V
Turn-on Delay Time
6
Turn-on Rise Time
Turn-off Delay Time
t
r
V
DD
= 5V,
I
D
= 20A,
R
G
= 6Ω
ns
30
t
d(off)
8
Turn-off Fall Time
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
T
C
= 25ºC
I
S
50
—
A
V
—
1.2
T
J
= 25ºC, I
SD
= 20A, V
GS
= 0V
V
SD
Q
rr
—
—
—
—
Reverse Recovery Charge
—
—
57
nC
ns
I
F
= 20A, V
GS
= 0V
di/dt=500A/us
Reverse Recovery Time
T
rr
21
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
www
.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
G50N03D5
Gate Charge TestCircuit
Switch TimeTest Circuit
EAS Test Circuit
www
.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
G50N03D5
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
160
140
120
100
80
160
140
120
100
80
10V
5V
V
DS
=5V
4.5V
4V
60
60
3.5V
25
℃
40
40
20
20
V
GS
=3.3V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 4.Gate Charge
Figure 3. Drain Source On Resistance
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
V
DD
=15V
I
D
=20A
V
GS
=4.5V
V
GS
=10V
0
10
20
30
40
0
10
20
30
40
Qg Gate Charge
(
nC
)
I
D
–
D
rain Current
(
A
)
Figure5 .
Capacitance
Figure 6
. Source-
Drain Diode Forward
2500
2000
1500
1000
500
Ciss
Coss
Crss
0
0
5
10
15
20
25
30
Vds Drain-
Source Voltage(
V)
V
SD
, Source
–
t
o
–
D
rain Voltage
(
V
)
www
.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
G50N03D5
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7
. Drain-
Source On-
Resistance
V
GS
=10V
I
D
=20A
V
GS
=4.5V
I
D
=20A
V
DS
, Drain-Source Voltage(V)
T
J
, Junction
Temperature(
º
C)
Figure 9
. Normalized
MaximumTransient
Thermal Impedance
6°C/W
Pulse Width(
s)
www
.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
G50N03D5
DFN5
×
6-8L Package Information
www
.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
G50N03D5
编制
杭佳敏
审核
Revision Information
No.
1
Date
2022.7.8
Version
V1.0
Change Notice
A1398
www
.gofordsemi.com
TEL
：
0755-29961263
FAX:0755-29961466(A1398)
