GOFORD-G66
| Part # | GOFORD-G66 |
Download  | GOFORD-G66 |
GOFORD
G
66
D
Description
The G66 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
G
S
Schematic diagram
General Features
●
V
DSS
R
DS(ON)
R
DS(ON)
(Typ) (Typ)
I
D
@
@
-2.5V
-4.5V
-16V
3
m
Ω
5
4
m
Ω
-5.8
A
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●
PWM applications
●
Load switch
●
Power management
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
-16
Unit
V
Drain-Source Voltage
V
DS
V
GS
I
D
Gate-Source Voltage
±12
V
Drain Current -Continuous
-5.8
A
Drain Current -Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
-15
A
I
DM
1.7
W
℃
P
D
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θ
JA
74
℃
/W
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Page 1
GOFORD
G
66
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
V
DS
=-20V,V
GS
=0V
V
GS
=±8V,V
DS
=0V
–
V
–
-16
–
–
–
–
-1
μ
A
nA
I
GSS
±100
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
-0.45 -0.7
-1.0
45
60
–
V
m
Ω
S
V
GS
=-4.5V, I
D
=-4.1A
–
–
–
33
45
Drain-Source On-State Resistance
V
GS
=-2.5V, I
D
=-3A
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
V
DS
=-5V,I
D
=-3.5A
8.5
C
lss
C
oss
C
rss
–
–
–
740
290
190
–
–
–
PF
PF
PF
V
DS
=-4V,V
GS
=0V,
Output Capacitance
F=1.0MHz
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
12
35
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-4V,I
D
=-3.3A ,
R
L
=-1.2
Ω
,V
GEN
=-4.5V,R
g
=1
Ω
Turn-Off Delay Time
30
Turn-Off Fall Time
10
Total Gate Charge
Q
g
Q
gs
Q
gd
7.8
1.2
1.6
V
DS
=-4V,I
D
=-4.1A,V
GS
=-4.5V
V
GS
=0V,I
S
=-1.6A
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
–
–
–
–
-1.2
1.6
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Page 2
GOFORD
G
66
Typical Electrical and Thermal Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Page 3
GOFORD
G
66
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page 4
GOFORD
G
66
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page 5
