GOFORD-G6N02L
| Part # | GOFORD-G6N02L |
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G6N02L
GOFORD
N-Channel Trench MOSFET
Description
The G6N02L uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
G6N02
⚫
V
DS
20V
6A
< 11.3m
Ω
< 14.1m
Ω
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 4.5V)
⚫
R
DS(ON)
(at V
GS
= 2.5V)
⚫
100% Avalanche Tested
⚫
RoHS Compliant
Marking and pin assignment
Application
⚫
Power switch
⚫
DC/DC converters
SOT-23-3L
Marking
Device
Package
SOT-23-3L
Packaging
G6N02L
G6N02
3000pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
20
V
Continuous Drain Current
Pulsed Drain Current
I
D
I
DM
6
24
A
A
(note1)
Gate-Source Voltage
V
GS
±
12
V
Power Dissipation
P
D
1.8
W
ºC
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Ambient
R
thJA
80
TEL
：
0755-29961263
FAX:075
5
–
29961466
G6N02L
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
=
±
12V
20
—
—
—
—
V
μA
nA
V
1
±
100
0.9
I
GSS
—
—
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 3A
V
DS
=5V,I
D
=6A
0.5
—
0.7
10
12
50
11.3
14.1
—
Drain-Source On-Resistance
R
DS(on)
m
Ω
—
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
S
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1140
165
110
12.5
1.2
2.7
2.7
3
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 10V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= 4.5V,
I
D
= 6A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= 4.5V,
I
D
= 3A,
R
G
= 3
Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
37
7
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
V
SD
T
C
= 25ºC
—
—
—
6
1
A
V
Body Diode Voltage
T
J
= 25ºC, I
SD
= 1A, V
GS
= 0V
0.6
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:075
5
–
29961466
G6N02L
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:075
5
–
29961466
G6N02L
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
15
V
DS
= 5V
10
5
T
J
= 125ºC
T
J
= 25ºC
0
0
0.5
1
1.5
2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
5
4
3
2
1
0
25
20
15
10
5
V
DS
= 10V
I
D
=6A
V
GS
= 2.5V
V
GS
= 4.5V
0
2
4
6
8
10
0
2
4
6
8
10
I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance vs Vds
Figure 6. Source-Drain Diode Forward
Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:075
5
–
29961466
G6N02L
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
1.6
1.4
1.2
1
V
GS
=4.5V
I
D
=6A
0.8
0
25
50
75 100
125 150 175
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:075
5
–
29961466
G6N02L
GOFORD
SOT-23-3L Package Information
Dimensions in Millimeters
Symbol
MIN.
NOM.
MAX.
3.00
1.70
1.20
0.50
0.55
A
B
C
D
E
G
H
J
2.80
1.50
1.00
0.30
0.25
2.90
1.60
1.10
0.40
0.40
1.90
0.00
0.047
2.60
–
0.127
0.10
0.207
3.00
K
2.80
All Dimensions in mm
TEL
：
0755-29961263
FAX:075
5
–
29961466
