GOFORD-G7P03S
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G7P03S
GOFORD
P-Channel Trench MOSFET
Description
The G7P03S uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic diagram
⚫
V
DS
⚫
I
D
(at V
GS
= -10V)
⚫
R
DS(ON)
(at V
GS
= -10V)
-30V
-9A
< 22m
Ω
⚫
R
DS(ON)
(at V
GS
= -4.5V)
⚫
100% Avalanche Tested
⚫
RoHS Compliant
< 33m
Ω
Application
Marking and pin assignment
⚫
Power switch
⚫
DC/DC converters
SOP-8
Marking
Device
Package
SOP-8
Packaging
4000pcs/Reel
G7P03S
G7P03
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-30
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-9
A
A
V
(note1)
(note3)
I
DM
V
GS
-36
±
20
Power Dissipation
P
D
2.7
W
Single Pulse Avalanche Energy
EAS
231
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Ambient
R
thJA
47
TEL
：
0755-29961263
FAX:0755-29961466
(A1404)
G7P03S
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±
20V
-30
—
—
—
—
V
uA
nA
V
-1
±
100
-2
I
GSS
—
—
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -2A
-1
—
-1.6
16
23
22
Drain-Source On-Resistance
R
DS(on)
m
Ω
—
33
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1253
181
158
24.5
3
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -15V,
I
D
= -3A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Q
gs
Q
gd
t
d(on)
t
r
6
8
V
DD
= -15
V
,
I
D
= -3A,
R
G
= 1
Ω
9
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
26
8
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
-9
A
V
V
SD
T
J
= 25ºC, I
SD
= -3A, V
GS
= 0V
-1.2
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. V
DD
= -30V, R
G
= 25Ω,
L=0.5
mH, Starting T
J
= 25
°
C
。
TEL
：
0755-29961263
FAX:0755-29961466
(A1404)
G7P03S
GOFORD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
(A1404)
G7P03S
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Rdson vs Vgs
Figure 4. Gate Charge
V
DS
=-15V
I
D
=-3A
I
D
=-3A
– Vgs Gate-Source Voltage (V)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance vs Vds
Figure 6. Source-Drain Diode Forward
-Vds Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
(A1404)
G7P03S
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
I
D
=-3A
V
GD
=-10V
I
D
=-2A
V
GD
=-4.5V
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA.
R
θ
JA
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
(A1404)
G7P03S
GOFORD
SOP-8 Package Information
Dimensions in Millimeters
Symbol
MIN.
NOM.
6.000
MAX.
6.200
5.000
A
A1
B
5.800
4.800
4.900
1.270BSC
0.40^8x
3.880
B1
C
0.35^8x
3.780
—
0.45^8x
3.980
0.253
0.250
1.550
1.700
1.700
C1
D
0.203
0.050
1.350
1.500
1.500
0.150
D1
D2
D2
E
1.450
1.600
1.600
1.060REF
0.700
E1
F
0.400
0.100
0.250BSC
°
°
°
6
F1
2
4
TEL
：
0755-29961263
FAX:0755-29961466
(A1404)
