GOFORD-G80P03D5
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®
GOFORD
G80P03D5
P-Channel Enhancement Mode Power MOSFET
General Description
D
The G80P03D5 uses
advanced trench technology to
provide excellent RDS(ON) , low gate charge. It can be
used in a wide variety of applications.
G
S
General Features
Schematic diagram
pin assignment
DFN5*6
l
V
DS
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
-30V
-65A
< 6mΩ
l
R
DS(ON)
(at V
GS
= 4.5V)
l
100% Avalanche Tested
l
RoHS Compliant
< 8mΩ
Application
l
Power switch
l
DC/DC converters
Device
Package
DFN5*6
Marking
Packaging
5000pcs/Reel
G80P03D5
G80P03
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-30
V
Continuous Drain Current
Pulsed Drain Current
I
D
-65
-260
±
20
63
A
A
(note1)
I
DM
V
GS
P
D
Gate-Source Voltage
V
Power Dissipation
W
mJ
Single pulse avalanche energy
（
note2
）
E
AS
196
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
ºC/W
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
50
1.98
TEL
：
0755-29961263
FAX:0755-29961466
（
A1573
）
®
GOFORD
G80P03D5
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
±
20V
-30
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-2.5
6
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=- 250µA
V
GS
= -10V, I
D
= -30A
V
GS
= -4.5V, I
D
= -30A
V
DS
= -5V,I
D
= -30A
-1
—
-1.5
5
Drain-Source On-Resistance
R
DS(on)
mΩ
S
—
6.5
62
8
Forward Transconductance
Dynamic Parameters
Input Capacitance
g
FS
—
—
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
5386
718
673
95
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -15V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
V
DD
= -15V,
I
D
= -30A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
18
19
Turn-on Delay Time
Turn-on Rise Time
12
V
DD
= -15
V
,
I
D
= -30A,
R
G
= -2.5Ω
60
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
80
65
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
-65
-1.2
—
A
V
V
SD
Q
rr
Trr
T
J
= 25ºC, I
SD
= -30A, V
GS
= 0V
Reverse Recovery Charge
60
52
nC
ns
I
F
= -25A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=-30V,VGS=-10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466
（
A1573
）
®
GOFORD
G80P03D5
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
-10V
-5V
-4.5V
-4V
V
DS
= -5V
-3.5V
V
GS
= -3.3V
25
℃
0
1
2
3
4
5
0
1
2
3
4
5
6
– V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
10
8
9
8
7
6
5
4
3
2
V
DD
= -15V
I
D
= -30A
6
V
GS
= -4.5V
V
GS
= -10V
4
2
0
0
20
40
60
80
100
0
10
20
30
40
-I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source- Drain Diode Forward
7000
6000
5000
4000
3000
2000
1000
0
Ciss
Coss
Crss
0
5
10
15
20
25
30
-V
DS
Drain-Source Voltage(V)
– V
SD
Source-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1573
）
®
GOFORD
G80P03D5
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
V
GS
=-10V
I
D
=-30A
V
GS
=-4.5V
I
D
=-30A
T
J(MAX)
=150
℃
T
C
=25
℃
J
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
1.98
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1573
）
®
GOFORD
G80P03D5
DFN5X6-8L Package information
TEL
：
0755-29961263
FAX:0755-29961466
（
A1573
）
