GOFORD-G86N06K

G86N06K  

N-Channel Enhancement Mode Power MOSFET  

Description  

The G86N06K uses advanced trench technology to provide  

excellent R

DS(ON)

, low gate charge. It can be used in a wide  

variety of applications.  

General Features  

l

V

DS  

60V  

Schematic diagram  

l

I

D

(at V

GS

= 10V)  

l

R

DS(ON)

(at V

GS

= 10V)  

68A  

8.4mΩ  

<

l

100% Avalanche Tested  

l

RoHS Compliant  

Application  

l

Power switch  

l

DC/DC converters  

TO-252  

Ordering Information  

Device  

Package  

Marking  

Packaging  

2500psc/Reel  

G86N06K  

TO-252  

G86N06  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

60  

V

Continuous Drain Current  

Pulsed Drain Current  

Gate-Source Voltage  

I

D  

68  

A

A

V

(note1)  

I

DM  

V

GS  

272  

±

20  

Power Dissipation  

P

D  

125  

144  

W

Single pulse avalanche energy  

（

note2

）  

E

AS  

mJ  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

ºC  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

Thermal Resistance, Junction-to-Ambient  

Maximum Junction-to-Case  

R

thJA  

R

thJC  

46  

1

ºC/W  

ºC/W  

TEL

：

0755-29961263  

FAX:0755-29961466(A1012)  

G86N06K  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Typ.  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 60V, V

GS

= 0V  

V

GS

=

±

20V  

60  

—  

—  

—  

—  

1

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

4

Gate-Source Threshold Voltage  

Drain-Source On-Resistance  

Forward Transconductance  

V

GS(th)  

R

DS(on)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 4A  

2

2.8  

7.5  

—  

8.4  

mΩ  

g

FS  

V

GS

= 5V, I

D

= 4A  

—  

10  

—  

S

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

3130  

232  

230  

55  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 30V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

V

DD

= 30V,  

I

D

= 4A,  

V

GS

= 10V  

Gate-Source Charge  

Gate-Drain Charge  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

Q

gs  

Q

gd  

t

d(on)  

t

r  

14  

16  

8

V

DD

= 30

V

,  

I

D

= 4A,  

R

G

= 3Ω  

6.5  

36  

ns  

t

d(off)  

t

f  

13  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

68  

1.2  

—  

A

V

V

SD  

T

J

= 25ºC, I

SD

= 4A, V

GS

= 0V  

Reverse Recovery Charge  

42  

30  

nC  

ns  

Q

rr  

T

rr  

I

F

= 4A, V

GS

= 0V  

di/dt=100A/us  

Reverse Recovery Time  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. EAS

 

condition : Tj=25

℃

,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω  

3. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466(A1012)  

G86N06K  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466(A1012)  

G86N06K  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

120  

100  

80  

60  

40  

20  

0

120  

100  

80  

60  

40  

20  

0

V

DS

= 5V  

10V  

8V  

6V  

25

℃

 

5V  

V

GS

=4.5V  

0

1

2

3

4

0

2

4

6

8

10  

V

DS

, Drain-to-Source Voltage (V)  

V

GS

, Gate-to-Source Voltage (V)  

Figure 3. Drain Source On Resistance  

Figure 4. Gate Charge  

10  

9

10  

8

V

DD

=30V  

I

D

=4A  

8

6

V

GS

= 10V  

7

4

6

2

5

4

0

0

2

4

6

8

0

10  

20  

30  

40  

50  

60  

I

D

-Drain Current

（

A

）  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

4500  

4000  

3500  

3000  

2500  

2000  

1500  

1000  

500  

Ciss  

Coss  

Crss  

0

0

10  

20  

30  

40  

50  

60  

V

DS

Drain-Source Voltage(V)  

V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1012)  

G86N06K  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 7. Drain-Source On-Resistance  

Figure 8. Safe Operation Area  

V

GS

= 10V,  

I

D

= 4A  

T

J

, Junction Temperature (

º

C)  

V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

1

°

C/W  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1012)  

G86N06K  

TO-252 Package Information  

E

b3  

c

E1  

A2  

b

e

L

(L1)  

COMMON DIMENSIONS  

mm  

SYMBOL  

MIN  

NOM  

MAX  

A

A1  

A2  

b

2.20  

0.00  

0.97  

0.68  

5.20  

0.43  

5.98  

2.30  

–

2.40  

0.20  

1.17  

0.90  

5.50  

0.63  

6.22  

1.07  

0.78  

5.33  

0.53  

6.10  

5.30REF  

6.60  

–

b3  

c

D

D1  

E

6.40  

4.63  

6.80  

–

E1  

e

2.286BSC  

10.10  

1.50  

2.90REF  

0.51BSC  

–

H

9.40  

1.38  

10.50  

1.75  

L

L1  

L2  

L3  

L4  

L5  

θ

0.88  

0.50  

1.65  

1.28  

1.00  

1.95  

8

°  

–

1.80  

–

0

°  

TEL

：

0755-29961263  

FAX:0755-29961466(A1012)