GOFORD-GC20N65FD
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GC20N65FD
N-Channel Enhancement Mode Power MOSFET
Description
The GC20N65FD uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l
V
DS
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
650V
20A
< 190mΩ
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
TO-220F
Ordering Information
Device
Package
Marking
Packaging
50psc/Tube
GC20N65FD
TO-220F
GC20N65
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
650
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
20
80
A
A
V
(note1)
I
DM
V
GS
±
30
Power Dissipation
P
D
40
W
Single pulse avalanche energy
（
note2
）
E
AS
484
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
65
ºC/W
ºC/W
3.1
TEL
：
0755-29961263
FAX:0755-29961466
GC20N65FD
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V
V
GS
=
±
30V
650
—
—
—
—
10
V
μA
nA
V
I
GSS
—
—
±
100
5
Gate-Source Threshold Voltage
Drain-Source On-Resistance
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
3
3.9
167
—
190
mΩ
Forward Transconductance
g
FS
V
GS
= 5V, I
D
= 10A
—
15
—
S
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1729
41
2
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 100V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
39
9
V
DD
= 480V,
I
D
= 10A,
V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Q
gs
Q
gd
t
d(on)
t
r
16
77
36
120
63
V
DD
= 400
V
,
I
D
= 10A,
R
G
= 25Ω
ns
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
20
1.2
—
A
V
V
SD
T
J
= 25ºC, I
SD
= 10A, V
GS
= 0V
Reverse Recovery Charge
7.5
375
nC
ns
Q
rr
T
rr
I
F
= 10A, V
GS
= 0V
di/dt=100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω
3. Identical
low side and high side switch with identical R
G
TEL
：
0755-29961263
FAX:0755-29961466
GC20N65FD
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
GC20N65FD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
14
12
10
8
14
12
10
8
10V
7V
V
DS
= 5V
6.5V
6V
25
℃
6
6
4
4
2
2
V
GS
=4.5V
5V
0
0
0
1
2
3
4
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
10
8
220
200
180
160
140
120
100
V
DD
= 325V
I
D
= 10A
6
V
GS
= 10V
4
2
0
0
5
10
15
20
0
10
20
30
40
50
I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
14000
12000
10000
8000
6000
4000
2000
0
Coss
Ciss
Crss
0
10
20
30
40
50
60
V
DS
Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466
GC20N65FD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Drain-Source On-Resistance
Figure 8. Safe Operation Area
V
GS
= 10V
I
D
= 10A
T
J
, Junction Temperature (
º
C)
V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
3.7
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
