GOFORD-GN2014

GOFORD  

GN2014  

Features  

•

•

•

•

•

TrenchFET Power MOSFET  

Epoxy meets UL 94 V-0 Flammability Rating  

Moisture Sensitivity Level 1  

Halogen Free. “Green” Device (Note 1)  

Lead Free Finish/RoHS Compliant (“P” Suffix designates RoHS  

Compliant. See ordering information)  

N-Channel MOSFET  

Maximum Ratings  

DFN2020-6J  

•

•

•

Operating Junction Temperature Range : -55

o

C to +150

o

C  

Storage Temperature Range: -55

o

C to +150

o

C  

Maximum Thermal Resistance: 167

o

C/W Junction to Ambient

(Note 2)  

*

)

Parameter  

Drain -Source Voltage  

Rating  

12  

Symbol  

V

DS  

V

GS  

I

D  

Unit  

V

‘

(

+

Gate-Source Voltage  

Drain Current  

±

8  

V

1

5

 

A

2

4

ꢀ

 

4ꢁ  

Drain Current-Pulse

(Note

3

)  

Total Power Dissipation

(Note

2

)  

I

DM  

7

5

 

A

4

0

P

D  

0.7  

W

1

–

Note: 1.

Halogen free “Green” products are defined as those which contain <900ppm bromine,  

.

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.  

,

4ꢃ  

4ꢂ  

3

Internal Structure  

D

D

S

6

5

4

DIMENSIONS  

MM  

MIN MAX MIN MAX  

0.028 0.032 0.700 0.800  

INCHES  

DIM  

NOTE  

A

B

C

D

E

F

G

H

J

0.008  

0.203  

TYP

.

 

1

2

3

0.000 0.002 0.000 0.050  

0.076 0.082 1.924 2.076  

0.076 0.082 1.924 2.076  

0.031 0.039 0.800 1.000  

0.033 0.041 0.850 1.050  

0.008 0.016 0.200 0.400  

0.008 —–

 

0.200 —–  

0.018 0.026 0.460 0.660  

Marking:

N201

4

 

D

D

G

K

L

0.026  

0.650  

TYP

.  

M

N

0.010 0.014 0.250 0.350  

0.007 0.013 0.174 0.326  

TEL

：

0755-29961263  

FAX:0755-29961466  

GOFORD  

GN2014  

ELECTRICAL CHARACTERISTICS (T

a

=25

℃

unless otherwise specified)  

Parameter  

Symbol  

Test conditions  

Min  

Typ  

Max  

Unit  

Static Characteristics  

Drain-Source Breakdown Voltage  

V

(BR)DSS

V

GS

=0V, I

D

=250µA  

V

V

12  

Gate-Threshold Voltage

(Note

4

)  

Gate-Body Leakage Current  

Zero Gate Voltage Drain Current  

V

GS(th)  

V

DS

=V

GS

, I

D

=250µA  

0.

50  

0.7  

1.

1  

I

GSS  

I

DSS  

V

GS

=±

8

V, V

DS

=0V  

nA  

µA  

±100  

V

DS

=

12

V, V

GS

=0V  

V

GS

=

8

V, I

D

=

5

A  

1

8

5

7

R

DS(on)  

Drain-Source On-Resistance  

V

GS

=

4

.5V, I

D

=5A  

V

GS

=

2.5

V, I

D

=5A  

V

DS

=

6

V, I

D

=

5

A  

mΩ  

9

9

11  

Forward Tranconductance

(Note

4

)  

Diode Forward Voltage  

4

0  

g

FS  

S

V

V

SD  

V

GS

=0V, I

S

=

1

0A  

1.2  

Dynamic Characteristics

(Note

5

)  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

1

300  

21

0  

14

0  

11  

V

DS

=

15

V,V

GS

=0V, f=1MHz  

pF  

Ω

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

f=1MHz  

Switching Characteristics

(Note

5

)  

t

d(on)  

t

r  

t

d(off)  

t

f  

Turn-On Delay

 

Time  

1

1  

3

0  

24  

6

Turn-On Rise Time  

Turn-Off Delay

 

Time  

Turn-Off Fall

 

Time  

Total Gate Charge  

Gate-Source Chage  

V

DD

=

15

V,V

G

S

=

10

V,  

I

D

=1

5

A,R

G

=

3.3

Ω

 

ns  

Q

g  

Q

gs  

Q

gd  

23  

V

DS

=

15

V,Vgs=

10

V,I

D

=

3

0A  

nC  

3.3  

Gage-Drain Charge  

Note:  

4.8  

2.

Surface Mounted On FR4 Board Using The Minimum Pad Size,1oz Copper.  

3.

Surface Mounted On FR4 Board Using 1 Square Inch Pad Size, 1oz Copper.  

4.

Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%.  

5.

These Parameters Have No Way To Verify.  

TEL

：

0755-29961263  

FAX:0755-29961466