GOFORD-GT045N10T

GOFORD  

GT045N10  

N-Channel Enhancement Mode Power MOSFET  

Description  

The GT045N10 uses advanced trench technology to provide  

excellent R  

variety of applications.  

General Features  

Schematic Diagram  

⚫

V

DS  

100V  

130A  

< 4.5m

Ω  

⚫

I

D

(at V

GS

= 10V)  

⚫

R

DS(ON)

(at V

GS

= 10V)  

⚫

R

DS(ON)

(at V

GS

= 4.5V)  

< 6.3m

Ω  

⚫

100% Avalanche Tested  

⚫

RoHS Compliant  

Application  

⚫

Power switch  

⚫

DC/DC converters  

⚫

BMS  

TO-263  

Marking  

Device  

Package  

Packaging  

GT045N10M  

TO-263  

TO-220  

GT045N10  

GT045N10  

800pcs/Reel  

GT045N10T  

50pcs/Tube  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

100  

V

Continuous Drain Current  

Pulsed Drain Current  

Gate-Source Voltage  

I

D  

130  

240  

±

20  

A

A

V

(note1)  

(note2)  

I

DM  

V

GS  

EAS  

P

D  

42  

156  

mJ  

W

Single Pulse Avalanche Energy  

Power Dissipation  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

ºC  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

ºC /W  

ºC /W  

Thermal Resistance, Junction-to-Ambient  

Thermal Resistance, Junction-to-Case  

R

thJA  

R

thJc  

62.5  

0.8  

TEL

：

0755-29961262  

FAX:075

5

-29961466  

GOFORD  

GT045N10  

Specifications

T

J

= 25ºC

 

, unless otherwise noted  

Value  

Typ.  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= 250µA  

V

DS

= 100V, V

GS

= 0V  

V

GS

=

±

20V  

100  

—  

—  

—  

—  

1

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

3

Gate-Source Threshold Voltage  

V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  

V

GS

= 10V, I

D

= 20A  

V

GS

= 4.5V, I

D

= 20A  

V

DS

=10V,I

D

=20A  

1

2

—  

4.1  

6.0  

4.5  

6.3  

—  

Drain-Source On-Resistance  

R

DS(on)  

m

Ω  

—  

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

g

FS  

S

—  

60  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

6124  

792  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= 50V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

15  

101.6  

20.6  

28.7  

28.2  

7.5  

V

DD

= 50V,  

I

D

= 20A,  

V

GS

= 10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Turn-on Delay Time  

Turn-on Rise Time  

V

DD

= 50V,  

I

D

= 20A,  

R

G

= 4.5

Ω  

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

81.9  

20.1  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

I

S  

—  

—  

—  

—  

—  

—  

130  

T

C

= 25ºC  

A

V

Pulsed Diode Forward Current  

I

SM  

390  

1.3  

Body Diode Voltage  

V

SD  

T

J

= 25ºC, I

SD

= 20A, V

GS

= 0V  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. I

AS

= 23A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25

°

C  

3. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961262  

FAX:075

5

-29961466  

GOFORD  

GT045N10  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961262  

FAX:075

5

-29961466  

GOFORD  

GT045N10  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

V

DS

, Drain-to-Source Voltage (V)  

V

GS

, Gate-to-Source Voltage (V)  

Figure 3.Rdson-  

Drain Current  

Figure 4. Gate Charge  

8

7

6

5

4

3

2

V

DD

= 50V  

I

D

=20A  

V

GS

=4.5V  

V

GS

=10V  

0

5

10  

15  

20  

I

D

-Drain Current

（

A

）  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance vs Vds  

Figure 6. Source-Drain Diode Forward  

Vds Drain-Source Voltage(V)  

V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961262  

FAX:075

5

-29961466  

GOFORD  

GT045N10  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 7. Drain-Source On-Resistance  

Figure 8. Safe Operation Area  

V

GS

= 10V  

I =20A  

T

J

, Junction Temperature (

º

C)  

V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

Pulse Width (s)  

TEL

：

0755-29961262  

FAX:075

5

-29961466  

GOFORD  

GT045N10  

TO-263 Package Information  

TEL

：

0755-29961262  

FAX:075

5

-29961466  

GOFORD  

GT045N10  

TO-220 Package information  

A

E

A1  

䌙㻼  

E3  

A2  

b2  

b

c

e

e1  

COMMONDIMENSIONS  

mm  

NOM  

SYMBO  

MIN  

MAX  

4.70  

1.40  

2.60  

0.95  

1.47  

0.60  

16.10  

9.40  

–

A

A1  

A2  

b

4.37  

1.25  

2.20  

0.70  

1.70  

0.45  

15.10  

8.80  

5.50  

9.70  

7.00  

4.57  

1.30  

2.40  

0.80  

1.27  

0.50  

15.60  

9.10  

–

b2  

c

D

D1  

D2  

E

10.00  

–

10.30  

–

E3  

e

2.54BSC  

5.08BSC  

6.50  

13.50  

3.10  

3.60  

2.80  

e1  

H1  

L

6.25  

12.75  

–

6.85  

13.80  

3.40  

3.80  

3.00  

L1  

Ⱦ

P  

Q

3.40  

2.60  

TEL

：

0755-29961262  

FAX:075

5

–

29961466