GOFORD-GT100N12T
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GT100N12
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The GT100N12 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge. It can be used in a wide
variety of applications.
General Features
Schematic Diagram
⚫
V
DS
⚫
I
D
(at V
GS
= 10V)
⚫
R
DS(ON)
(at V
GS
= 10V)
120V
70A
< 10m
Ω
⚫
100% Avalanche Tested
⚫
RoHS Compliant
Application
⚫
Synchronous Rectification in SMPS or LED Driver
⚫
UPS
⚫
Motor Control
⚫
BMS
⚫
High Frequency Circuit
TO-220
TO-263
Marking
Device
Package
TO-220
TO-263
Packaging
GT100N12T
GT100N12M
GT100N12
GT100N12
50pcs/Tube
800
pcs/
Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
120
V
Continuous Drain Current
Pulsed Drain Current
I
D
70
280
±
20
120
352
A
A
(note1)
I
DM
V
GS
P
D
Gate-Source Voltage
V
Power Dissipation
W
mJ
Single pulse avalanche energy
（
note3
）
E
AS
Operating Junction and Storage Temperature Range
Thermal Resistance
T
J
, T
stg
-55 To 150
ºC
Parameter
Symbol
Value
Unit
ºC /W
Thermal Resistance, Junction-to-Case
R
thJC
1.25
29961263
TEL
：
0755-
FAX:0755-29961466
GT100N12
GOFORD
Specifications
T
J
= 25ºC
, unless otherwise noted
Value
Typ.
Parameter
Symbol
Test Conditions
Unit
Min.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic Parameters
Input Capacitance
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 120V, V
GS
= 0V
V
GS
=
±
20V
120
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±
100
3.5
10
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 35A
V
DS
=5V,I
D
=35A
2.5
—
3
8
m
Ω
S
—
60
—
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
3050
280
22
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 60V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
50
V
DS
= 60V,
I
D
= 35A,
V
GS
= 10V
Gate-Source Charge
Q
gs
Q
gd
t
d(on)
t
r
17
Gate-Drain Charge
15
Turn-on Delay Time
15
Turn-on Rise Time
V
DD
= 60
V
,
I
D
= 35A,
R
G
= 1.6
Ω
10
ns
Turn-off Delay Time
t
d(off)
t
f
34
Turn-off Fall Time
8
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
trr
T
C
= 25ºC
—
—
—
—
—
70
1.2
—
A
V
T
J
= 25ºC, I
SD
= 25A, V
GS
= 0V
I
S
= 35A, V
GS
= 0V
di/dt=100A/us
Reverse Recovery Time
60
ns
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. EAS
condition : Tj=25
℃
,VDD=50V,VGS=10V,L=0.5mH,Rg=25
Ω
29961263
TEL
：
0755-
FAX:0755-29961466
GT100N12
GOFORD
Gate Charge Test Circuit
EAS Test Circuit
Switch Time Test Circuit
29961263
TEL
：
0755-
FAX:0755-29961466
GT100N12
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
150
℃
25
℃
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Drain Source On Resistance
Figure 3. Gate Charge
V
GS
= 10V
ID-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance vs Vds
Figure 6. Source-Drain Diode Forward
150
℃
25
℃
Vds Drain-Source Voltage(V)
V
SD
, Source-to-Drain Voltage (V)
29961263
TEL
：
0755-
FAX:0755-29961466
GT100N12
GOFORD
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 7. Drain-Source On-Resistance
Figure 8. Safe Operation Area
ID=35A
V
DS
, Drain-Source Voltage(V)
T
J
, Junction Temperature (
º
C)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
29961263
TEL
：
0755-
FAX:0755-29961466
GT100N12
GOFORD
TO-220 Package Information
Dimensions in Millimeters
Symbol
MIN.
4.37
1.25
2.2
NOM.
4.57
1.3
MAX.
4.7
A
A1
A2
b
1.4
2.4
2.6
0.7
0.8
0.95
1.47
0.6
b2
c
1.7
1.27
0.5
0.45
15.1
8.8
D
15.6
9.1
16.1
9.4
D1
D2
E
5.5
9.7
10
2.54BSC
5.08BSC
6.5
10.3
e
e1
H1
L
6.25
6.85
13.8
3.4
3.8
3
12.75
13.5
L1
∅
P
Q
3.1
3.4
2.6
3.6
2.8
29961263
TEL
：
0755-
FAX:0755-29961466
