GOFORD-GT55N06
| Part # | GOFORD-GT55N06 |
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GOFORD
GT55N06
Description
The GT55N06 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
Schematic diagram
RDS(ON)
@10V (typ)
RDS(ON)
@4.5V (typ)
VDSS
60V
ID
53A
6.8
9.5 m
m
Ω
Ω
Marking and pin assignment
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
●
Special process technology for high ESD capability
●
RoHS Compliant
Application
Synchronus Rectification in DC/DC and AC/DC Converters
Industrial and Motor Drive applications
DFN 5×6-8L
Ordering Information
Part Number
Marking
Case
Packaging
GT55N06
GT55N06
DFN5X6-8L
2500pcs/Reel
Absolute Maximum Ratings
T =25°C
unless otherwise noted
A
Parameter
Symbol
Maximum
Units
V
V
Drain-Source Voltage
V
DS
6
0
Gate-Source Voltage
Continuous Drain
Current
G
V
GS
±20
53
T
A
=25°C
I
D
A
T
A
=100°C
34
Pulsed Drain Current
C
I
DM
E
AS
A
110
195
70
C
mJ
Avalanche energy
L=0.5mH
T
A
=25°C
Power Dissipation
A
P
DSM
W
T
A
=70°C
28
Junction and Storage Temperature Range
T
J
, T
STG
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Maximum
Units
°C/W
Maximum Junction-to-Ambient
A
t
≤
10s
14
17
R
θJA
Maximum Junction-to-Ambient
A D
°C/W
°C/W
Steady-State
40
55
Maximum Junction-to-Case
Steady-State
R
θJC
1.3
1.8
H
T
P
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FAX
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0755-29961466
Page 1
GOFORD
GT55N06
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
60
V
65
V
DS
=60V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=55°C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
±100
2.5
8.2
12.0
nA
V
V
DS
=V
GS
, I
D
=250
A
V
GS(th)
1.1
1.7
6.8
9.5
V
GS
=10V, I
D
=20A
GS
=4.5V, I
D
=20A
m
m
S
R
DS(ON)
Static Drain-Source On-Resistance
V
V
DS
=5V, I
D
=20A
g
FS
V
SD
I
S
Diode Forward Voltage
Diode Forward Voltage
3
0
0
I
S
=20A,V =0V
0.85
0.99
53
V
GS
Maximum Body-Diode Continuous Current
G
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1988
470
14
pF
pF
pF
V
GS
=0V, V
DS
=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
1.6
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
31
16
6
nC
nC
nC
nC
Q
g
(4.5V) Total
Gate Charge
V
GS
=10V, V
DS
=30V, I
D
=20A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
5
10.5
4.5
29.5
8
ns
ns
ns
ns
ns
nC
V
GS
=10V, V
DS
=15V, R
L
=2.5
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
Turn-off Fall Time
I
F
=2
2
0A,di/dt=500A/µs
I
F
=2
2
0A,di/dt=500A/µs
t
rr
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery charge
17
58
Q
rr
A. The value of R
θJA
is measured with the device mounted on 1in2 FR‐4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The Power
dissipation P
DSM
is based on R
θJA
t≤ 10s and the maximum allowed junction temperature of 150
°
C. The value in any given application depends on
the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction‐to‐case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150
°
C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction‐to‐case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H
T
P
:
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TEL
：
0755-29
1
9
6
2
FAX
：
0755-29961466
Page 2
GOFORD
GT55N06
Typical Performance Characteristics
Figꢀ2:ꢀTransferꢀCharacteristics
Figꢀ1:ꢀOutputꢀCharacteristics
160
150
140
130
120
110
100
90
80
70
60
50
8V
80
70
60
50
40
30
20
10
0
10V
V
DS
=5V
6V
4.5V
4V
3.5V
40
30
20
10
125°C
25°C
V
GS
=3V
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
Figꢀ6:ꢀCapacitanceꢀCharacteristics
Figꢀ5:ꢀRds(on)ꢀvs.ꢀTemperature
10000
1000
100
2.2ꢀ
2.0ꢀ
1.8ꢀ
1.6ꢀ
1.4ꢀ
1.2ꢀ
1.0ꢀ
0.8ꢀ
Ciss
Coss
V
GS
=10V
I
D
=20A
V
GS
=4.5V
I
D
=20A
Crss
V
GS
=0V
f=1MHz
10
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
175
Tj – Junction Temperature (
°
C)
V
DS
(V)
H
T
P
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Page 3
GOFORD
GT55N06
Figꢀ8:ꢀBodyꢁdiodeꢀForwardꢀCharacteristics
Figꢀ7:ꢀGateꢀChargeꢀCharacteristics
10
8
V
DS
=30V
I
D
=20A
10
1
125
˚C
6
25
˚C
4
0.1
0.01
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0
05
10
15
20
25
30
35
40
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Figꢀ10:ꢀDrainꢀCurrentꢀDerating
Figꢀ9:ꢀPowerꢀDissipation
T
A
– Case Temperature (
°
C
)
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Page 4
GOFORD
GT55N06
Figure A: Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
Figure B:
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Figure C: Unclamped Inductive Switching (UIS) Test
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I
AR
VDC
Id
Rg
–
DUT
Vgs
Vgs
Figure D: Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
H
T
P
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TEL
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0755-29
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FAX
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0755-29961466
Page 5
GOFORD
GT55N06
DFN5X6-8L Package information
E1 E
c
e
b
D1
L
L1
D2
D
H
I
A
E2
L2
COMMON
SYMBOL
MM
INCH
MIN
MAX
MIN
MAX
A
b
1.03
0.34
1.17
0.48
0.970
5.40
4.31
5.00
6.15
5.85
–
0.0406
0.0134
0.0324
0.1890
0.1618
0.1890
0.2343
0.2224
0.0630
0.0461
0.0189
0.0382
0.2126
0.1697
0.1969
0.2421
0.2303
–
c
0.824
4.80
4.11
4.80
5.59
5.65
1.60
D
D1
D2
E
E1
E2
e
1.27 BSC
0.05 BSC
L
0.05
0.38
0.38
3.30
–
0.25
0.50
0.50
3.50
0.18
0.0020
0.0150
0.0150
0.1299
–
0.0098
0.0197
0.0197
0.1378
0.0070
L1
L2
H
I
H
T
P
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o
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TEL
：
0755-29
1
9
6
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FAX
：
0755-29961466
Page 6
