GOFORD-GT650N15K
| Part # | GOFORD-GT650N15K |
Download  | GOFORD-GT650N15K |
GOFORD
GT650N15K
N-Channel Enhancement Mode Power MOSFET
Description
The GT650N15K uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l
V
DS
l
I
D
(at V
GS
= 10V)
l
R
DS(ON)
(at V
GS
= 10V)
150V
20A
< 65mΩ
Schematic Diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Synchronous Rectification in SMPS or LED Driver
l
UPS
l
Motor Control
l
BMS
l
High Frequency Circuit
TO-252
Device
Package
Marking
Packaging
2500pcs/Reel
GT650N15K
TO-252
GT650N15
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
150
V
Continuous Drain Current
Pulsed Drain Current
I
D
20
80
A
A
(note1)
I
DM
V
GS
P
D
Gate-Source Voltage
±
20
68
V
Power Dissipation
W
mJ
Single pulse avalanche energy
（
note2
）
E
AS
65
Operating Junction and Storage Temperature Range
Thermal Resistance
T
J
, T
stg
-55 To 175
ºC
Parameter
Symbol
Value
Unit
ºC/W
Thermal Resistance, Junction-to-Case
(note3)
R
thJC
2.2
TEL
：
0755-29961263
FAX:0755-29961466
（
A1549
）
GOFORD
GT650N15K
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic Parameters
Input Capacitance
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
=
±
20V
150
—
—
—
—
1
V
μA
nA
V
I
GSS
—
—
±
100
4.5
65
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 10A
V
DS
=5V,I
D
=10A
2.5
—
3.3
59
—
mΩ
S
15
—
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
600
74.7
10.8
12
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= 75V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
V
DS
= 75V,
I
D
= 10A,
V
GS
= 10V
Gate-Source Charge
Q
gs
Q
gd
t
d(on)
t
r
5.7
2.7
9.5
5.5
12.5
3
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
VDD=75
V
,
R
L=7.5Ω
VGS=10
V
,
RG=3Ω
ns
Turn-off Delay Time
t
d(off)
t
f
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
T
C
= 25ºC
—
—
—
—
—
—
20
1.2
—
A
V
V
SD
trr
T
J
= 25ºC, I
SD
= 10A, V
GS
= 0V
Reverse Recovery Time
29
130
ns
nC
IF=IS,di/dt=100A/μs
Reverse Recovery Charge
Qrr
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. EAS
condition : Tj=25
℃
,VDD=50V,VGS=10V,L=0.5mH,Rg=25Ω
3. Surface
Mounted on FR4 Board, t ≤ 10 sec
TEL
：
0755-29961263
FAX:0755-29961466
（
A1549
）
GOFORD
GT650N15K
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466
（
A1549
）
GOFORD
GT650N15K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Drain Source On Resistance
Figure 3. Gate Charge
ID-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance vs Vds
Vds Drain-Source Voltage(V)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1549
）
GOFORD
GT650N15K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 6.
Normalized On Resistance Characteristics
Figure 7. Safe Operation Area
V
DS
, Drain-Source Voltage(V)
Junction Temperature(
°
C)
Figure 8. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466
（
A1549
）
GT095N10K
GOFORD
TO-252 Package Information
Dimensions in Millimeters
Symbol
MIN.
2.2
NOM.
2.3
MAX.
2.4
A
A1
A2
b
0
ꢀ
0.2
0.97
0.68
5.2
1.07
0.78
5.33
0.53
6.1
1.17
0.9
b3
c
5.5
0.43
5.98
0.63
6.22
D
D1
E
5.30REF
6.6
6.4
6.8
E1
e
4.63
ꢀ
ꢀ
2.286BSC
10.1
H
9.4
10.5
1.75
L
1.38
1.5
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
ꢀ
0.88
0.5
1.28
1
ꢀ
1.65
0
°
1.8
1.95
8
°
ꢀ
TEL
：
0755-29961263
FAX:0755-29961466
