GOFORD-GT68N12T
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GOFORD
GT68N12
Description
RDS(ON)
@10V (typ)
technology to provide low
charge, fast
switching and
GT68N12 use
advanced
VDSS
120V
ID
,
R
DS(ON)
low gate
s device
characteristics. Thi
excellent avalanche
is specially designed
to get better
m
Ω
5
110A
ruggedness
and suitable to use in motor control applications.
General Features
Low R
DS(on)
& FOM
●
●
Extremely low switching loss
●
Excellent stability and uniformity
●
Fast switching and soft recovery
●
RoHS Compliant
Schematic diagram
Application
●
Consumer electronic power supply
●
Motor control
●
Synchronous-rectification
●
Isolated DC/DC convertor
TO-263
●
Invertors
Ordering Information
Case
Part Number
GT68N12M
GT68N12T
Marking
GT68N12
GT68N12
Packaging
50pcs/Tube
50pcs/Tube
TO-263
TO-220
Absolute Maximum Ratings
at T
j
=25
℃
unless otherwise noted
Parameter
Symbol
V
DS
Value
Unit
V
Drain source voltage
Gate source voltage
120
±
20
V
GS
V
Continuous drain current
1)
, T
C
=25
℃
Pulsed drain current
2)
, T
C
=25
℃
Power dissipation
3)
,
T
C
=25
℃
I
D
110
A
I
D, pulse
P
D
330
A
192
W
mJ
℃
Single pulsed avalanche energy
5)
Operation and storage temperature
E
AS
400
T
stg
，
T
j
-55 to 150
Page 1
(VD)
GOFORD
GT68N12
Thermal Characteristics
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case
R
θ
JC
R
θ
JA
0.65
62
℃
/W
℃
/W
Thermal resistance, junction-ambient
4)
Electrical Characteristics
at T
j
=25
℃
unless otherwise specified
Min.
120
2.0
Typ.
Max.
Unit
V
Test condition
Parameter
Symbol
BV
DSS
Drain-source breakdown voltage
Gate threshold voltage
V
GS
=0 V, I
D
=250
μ
A
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=10 V, I
D
=30 A
V
GS
=20 V
V
GS(th)
4.0
6.5
100
-100
1
V
Drain-source on-state resistance
R
DS(ON)
5.0
m
Ω
Gate-source leakage current
Drain-source leakage current
I
GSS
nA
V
GS
=-20 V
I
DSS
μ
A
V
DS
=120 V, V
GS
=0 V
Dynamic Characteristics
Min.
Typ.
5823.0
778.8
17.5
Max.
Unit
pF
pF
pF
ns
Test condition
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Symbol
C
iss
V
GS
=0 V,
C
oss
C
rss
V
DS
=50 V,
ƒ=
100 kHz
t
d(on)
t
r
t
d(off)
t
f
30.3
V
GS
=10 V,
V
DS
=50 V,
R
G
=2
Ω
,
33.0
ns
Turn-off delay time
Fall time
59.5
ns
I
D
=25 A
11.7
ns
Gate Charge Characteristics
Min.
Typ.
68.9
18.1
15.9
4.8
Max.
Unit
nC
nC
nC
V
Test condition
Parameter
Total gate charge
Symbol
Q
g
Q
gs
I
D
=25 A,
Gate-source charge
Gate-drain charge
Gate plateau voltage
V
DS
=50 V,
V
GS
=10 V
Q
gd
V
plateau
Page 2
(VD)
GOFORD
GT68N12
Body Diode Characteristics
Min.
Typ.
Max.
110
330
1.3
Unit
Test condition
Parameter
Diode forward current
Pulsed source current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Symbol
I
S
A
V
GS
<V
th
I
SP
V
SD
t
rr
V
ns
nC
A
I
S
=30 A, V
GS
=0 V
85.0
240.0
4.6
I
S
=25 A,
Q
rr
I
rrm
di/dt=100
A/μs
Note
1) Calculated
continuous current based on maximum allowable junction temperature.
2) Repetitive
rating; pulse width limited by max. junction temperature.
3) Pd
is based on max. junction temperature, using junction-case thermal resistance.
4) The
value of R
θJ
A
is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with T
a
=25
℃
.
5) V
DD
=50 V, R
G
=50
Ω
, L=0.3 mH, starting T
j
=25
℃
.
Page 3
(VD)
GOFORD
GT68N12
Electrical Characteristics Diagrams
100
10
20
V
DS
= 10 V
T
j
= 25
℃
T
j
= 25
℃
4.5 V
15
10 V
4.3 V
1
10
4.2 V
0.1
0.01
5
4 V
V
GS
= 3.8 V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
, Drain-source voltage (V)
V
GS
, Gate-source voltage(V)
Figure 1, Typ. output characteristics
Figure 2, Typ. transfer characteristics
10.0
10000
C
iss
I
D
= 25 A
V
DS
= 50 V
7.5
5.0
2.5
0.0
1000
100
10
C
oss
C
rss
f = 100 kHz
V
GS
= 0 V
1
0
20
40
60
80
100
0
10
20
30
40
50
60
70
V
DS
, Drain-source voltage (V)
Q
g
, Gate charge(nC)
Figure 3, Typ. capacitances
Figure 4, Typ. gate charge
145
10.0m
8.0m
6.0m
4.0m
2.0m
0.0
I
D
= 250 μA
I
D
= 30 A
V
GS
= 0 V
V
GS
= 10 V
140
135
130
125
120
-50
0
50
100
150
-50
0
50
100
150
T
j
, Junction Temperature (
℃
)
T
j
, Junction Temperature (
℃
)
Figure 5, Drain-source breakdown voltage
Figure 6, Drain-source on-state resistance
Page 4
(VD)
GOFORD
GT68N12
120
100
80
60
40
20
0
100
T
j
= 25
℃
10
1
0.4
0.5
0.6
0.7
0.8
0.9
0
20
40
60
80
100
120
140
V
SD
, Source-Drain voltage (V)
T
C
, Case Temperature (
℃
)
Figure 7, Forward characteristic of body diode
Figure 8, Drain current
1000
100
10 μs
10
R
DS(ON)
Limited
100 μs
1 ms
10 ms
DC
1
0.1
0.1
1
10
100
1000
V
DS
, Drain-source voltage(V)
Figure 9, Safe operation area T
C
=25
℃
Page 5
(VD)
GOFORD
GT68N12
Test circuits and waveforms
Figure 1, Gate charge test circuit & waveform
Figure 2, Switching time test circuit & waveforms
Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms
Figure 4, Diode reverse recovery test circuit & waveforms
Page 6
(VD)
GOFORD
GT68N12
TO-220 Package information
A
E
A1
䌙㻼
E3
A2
b2
b
c
e
e1
COMMONDIMENSIONS
mm
NOM
SYMBO
MIN
4.37
1.25
2.20
0.70
1.70
0.45
15.10
8.80
5.50
9.70
7.00
MAX
A
A1
A2
b
4.57
1.30
2.40
0.80
1.27
0.50
15.60
9.10
–
4.70
1.40
2.60
0.95
1.47
0.60
b2
c
D
16.10
9.40
–
D1
D2
E
10.00
–
10.30
–
E3
e
2.54BSC
5.08BSC
6.50
13.50
3.10
3.60
2.80
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
L1
Ⱦ
P
Q
3.40
2.60
Page 7
(VD)
GOFORD
GT68N12
TO-263 Package information
A1
E3
A2
e0
Q2
Q1
H1
e1
E
b2
D2
D2
COMMON DIMENSIONS
mm
SYMBO
MIN
4.52
9.95
6.30
1.30
1.17
14.80
9.05
1.90
–
NOM
MAX
A
A1
A2
b
4.57
4.62
10.05
6.50
1.70
1.37
15.20
9.15
2.30
–
10.00
6.40
1.50
1.27
15.00
9.10
2.10
2.54
0.80
4.57
1.30
1.30
3
b2
c
D
D1
D2
E
–
–
E3
e
–
–
–
–
e0
e1
H1
L
–
–
1.73
–
–
2.40
2.50
0.50
1.50
0.50
–
–
–
–
L1
Ⱦ
P
R
–
–
–
–
–
–
Q1
Q2
0.10
0
0.15
0.02
–
Page 8
(VD)
