GOFORD-GT6K2P10KH

GT6K2P10KH  

P-Channel Enhancement Mode Power MOSFET  

Description  

The GT6K2P10KH uses advanced trench technology to  

provide excellent R

DS(ON)

, low gate charge. It can be used in  

a wide variety of applications.  

General Features  

l

V

DS  

l

I

D

(at V

GS

= -10V)  

l

R

DS(ON)

(at V

GS

= -10V)  

-100V  

-4.3A  

< 670mΩ  

Schematic diagram  

l

100% Avalanche Tested  

l

RoHS Compliant  

Application  

l

Power switch  

l

DC/DC converters  

TO-252  

Ordering Information  

Device  

Package  

Marking  

Packaging  

GT6K2P10KH  

TO-252  

GT6K2P10  

2500pcs/Reel  

Absolute Maximum Ratings

 

T

C

= 25ºC, unless otherwise noted  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

V

DS  

-100  

V

Continuous Drain Current  

Pulsed Drain Current  

I

D  

I

DM  

-4.3  

-17.2  

A

A

(note1)  

Gate-Source Voltage  

V

GS  

±

20  

V

Power Dissipation  

P

D  

25  

W

ºC  

Operating Junction and Storage Temperature Range  

T

J

, T

stg  

-55 To 150  

Thermal Resistance  

Parameter  

Symbol  

Value  

Unit  

ºC/W  

ºC/W  

Thermal Resistance, Junction-to-Ambient  

Maximum Junction-to-Case  

R

thJA  

R

thJC  

60  

4.96  

TEL

：

0755-29961263  

FAX:0755-29961466(A1766-V1.0)  

GT6K2P10KH  

Specifications

T

J

= 25ºC, unless otherwise noted  

Value  

Parameter  

Symbol  

Test Conditions  

Unit  

Min.  

Typ.  

Max.  

Static Parameters  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

V

(BR)DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

V

DS

= -100V, V

GS

= 0V  

V

GS

=

±

20V  

-100  

—  

—  

—  

—  

-1  

V

μA  

nA  

V

I

GSS  

—  

—  

±

100  

-3.0  

670  

Gate-Source Threshold Voltage  

Drain-Source On-Resistance  

V

GS(th)  

R

DS(on)  

V

DS

= V

GS

, I

D

= -250µA  

V

GS

= -10V, I

D

= -1A  

-1.0  

—  

-2.5  

525  

mΩ  

g

FS  

V

DS

= -5V,I  

D

= -1A  

—  

3

—  

S

Forward Transconductance  

Dynamic Parameters  

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

247  

21  

3

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

V

GS

= 0V,  

V

DS

= -50V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

pF  

nC  

10  

1

V

DD

= -50V,  

I

D

= -1A,  

V

GS

= -10V  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

d(on)  

t

r  

4

Turn-on Delay Time  

Turn-on Rise Time  

4

V

DD

= -50

V

,  

I

D

= -1A,  

R

G

= 6Ω  

5

ns  

Turn-off Delay Time  

Turn-off Fall Time  

t

d(off)  

t

f  

16  

44  

Drain-Source Body Diode Characteristics  

Continuous Body Diode Current  

Body Diode Voltage  

I

S  

V

SD  

Q

rr  

T

rr  

T

C

= 25ºC  

—  

—  

—  

—  

—  

—  

-4.3  

-1.2  

—  

A

V

T

J

= 25ºC, I

SD

= -1A, V

GS

= 0V  

Reverse Recovery Charge  

157  

60  

nC  

ns  

I

F

= -1A, V

GS

= 0V  

di/dt=-100A/us  

Reverse Recovery Time  

—  

Notes  

1. Repetitive

 

Rating: Pulse width limited by maximum junction temperature  

2. Identical

 

low side and high side switch with identical R

G  

TEL

：

0755-29961263  

FAX:0755-29961466(A1766-V1.0)  

GT6K2P10KH  

Gate Charge Test Circuit  

Switch Time Test Circuit  

EAS Test Circuit  

TEL

：

0755-29961263  

FAX:0755-29961466(A1766-V1.0)  

GT6K2P10KH  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 1. Output Characteristics  

Figure 2. Transfer Characteristics  

4

3.5  

3

4

3.5  

3

V

DS

= -5V  

-10V  

-4.5V  

2.5  

2

2.5  

2

-4V  

25

℃

 

1.5  

1

1.5  

1

-3.6V  

-3.3V  

0.5  

0

0.5  

0

V

GS

= -3V  

0

1

2

3

4

0

2

4

6

8

-V

DS

, Drain-to-Source Voltage (V)  

-V

GS

, Gate-to-Source Voltage (V)  

Figure 3.Drain Source On Resistance  

Figure 4. Gate Charge  

900  

800  

700  

600  

500  

400  

300  

10  

8

V

DD

= -50V,  

I

D

= -1A  

6

V

GS

= -10V  

4

2

0

0

0.5  

1

1.5  

2

0

2

4

6

8

10  

-I

D

-Drain Current (A)  

Qg Gate Charge

（

nC

）  

Figure 5. Capacitance  

Figure 6. Source-Drain Diode Forward  

300  

250  

200  

150  

100  

50  

Ciss  

150

℃

 

25

℃  

Coss  

Crss  

0

0

10  

20  

30  

40  

50  

60  

-V

DS

Drain-Source Voltage(V)  

-V

SD

, Source-to-Drain Voltage (V)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1766-V1.0)  

GT6K2P10KH  

Typical Characteristics

 

T

J

= 25

º

C, unless otherwise noted  

Figure 10. Safe Operation Area  

Figure 7. Drain-Source On-Resistance  

V

GS

= -10V,  

I

D

= -1A  

T

J

, Junction Temperature (

º

C)  

-V

DS

, Drain-Source Voltage(V)  

Figure 9. Normalized Maximum Transient  

Thermal Impedance  

4.96

°

C/W  

Pulse Width (s)  

TEL

：

0755-29961263  

FAX:0755-29961466(A1766-V1.0)  

GT6K2P10KH  

TO-252 Package

 

Information  

E

b3  

c

E1  

A2  

b

e

L

(L1)  

COMMON DIMENSIONS  

mm  

SYMBOL  

MIN  

NOM  

MAX  

A

A1  

A2  

b

2.20  

0.00  

0.97  

0.68  

5.20  

0.43  

5.98  

2.30  

–

2.40  

0.20  

1.17  

0.90  

5.50  

0.63  

6.22  

1.07  

0.78  

5.33  

0.53  

6.10  

5.30REF  

6.60  

–

b3  

c

D

D1  

E

6.40  

4.63  

6.80  

–

E1  

e

2.286BSC  

10.10  

1.50  

2.90REF  

0.51BSC  

–

H

9.40  

1.38  

10.50  

1.75  

L

L1  

L2  

L3  

L4  

L5  

θ

0.88  

0.50  

1.65  

1.28  

1.00  

1.95  

8

°  

–

1.80  

–

0

°  

TEL

：

0755-29961263  

FAX:0755-29961466(A1766-V1.0)