GOFORD-GT700P08K
| Part # | GOFORD-GT700P08K |
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GT700P08K
P-Channel Enhancement Mode Power MOSFET
Description
The GT700P08K uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
General Features
l
V
DS
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
-80V
-20A
< 72mΩ
Schematic diagram
l
100% Avalanche Tested
l
RoHS Compliant
Application
l
Power switch
l
DC/DC converters
TO-252
Device
Package
TO-252
Marking
Packaging
GT700P08K
GT700P08
2500pcs/Reel
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-80
V
Continuous Drain Current
Pulsed Drain Current
I
D
-20
-80
±
20
125
81
A
A
(note1)
(note2)
I
DM
V
GS
P
D
Gate-Source Voltage
V
Power Dissipation
W
mJ
Single pulse avalanche energy
E
AS
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
ºC/W
Thermal Resistance, Junction-to-Ambient
Maximum Junction-to-Case
R
thJA
R
thJC
75
1
TEL
：
0755-29961263
TFX:0755-29961466(A1559)
GT700P08K
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
Dynamic Parameters
Input Capacitance
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -80V, V
GS
= 0V
V
GS
=
±
20V
-80
—
—
—
—
-1
V
uA
nA
V
I
GSS
—
—
±
100
-3.5
72
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -2A
V
DS
= -5V,I
D
= -2A
-2
—
-2.5
58
6
mΩ
S
—
—
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1615
122
4
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -40V,
f = 1.0MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
75
16
19
18
20
55
35
V
DD
= -40V,
I
D
= -10A,
V
GS
= -10V
Gate-Source Charge
Q
gs
Q
gd
t
d(on)
t
r
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
V
DD
= -40
V
,
I
D
= -10A,
R
G
= 3Ω
ns
Turn-off Delay Time
t
d(off)
t
f
Turn-off Fall Time
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-20
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -2A, V
GS
= 0V
Reverse Recovery Charge
71
49
nC
ns
I
F
= -20A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. EAS
condition : Tj=25 ,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω
TEL
：
0755-29961263
TFX:0755-29961466(A1559)
GT700P08K
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
TFX:0755-29961466(A1559)
GT700P08K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
-10V
V
DS
= -5V
-5.5V
-4.5V
-4V
25
℃
-3.5V
V
GS
= -3.3V
0
0
0
2
4
6
8
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3. Drain Source On Resistance
Figure 4. Gate Charge
100
90
80
70
60
50
40
30
20
10
8
V
DD
= -40V
I
D
= -10A
6
V
GS
= -10V
4
2
0
0
1
2
3
4
0
10
20
30
40
50
60
70
80
-I
D
-Drain Current
（
A
）
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
2000
1800
1600
1400
1200
1000
800
Ciss
600
Coss
Crss
10
400
200
0
0
20
30
40
50
60
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TFX:0755-29961466(A1559)
TEL
：
0755-29961263
GT700P08K
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 8. Safe Operation Area
Figure 7. Drain-Source On-Resistance
1.4
V
GS
= -10V
I
D
= -2A
1.3
1.2
1.1
1
0.9
0.8
0
25
50
75
100
125
150
175
-V
DS
, Drain-Source Voltage(V)
T
J
, Junction Temperature (
º
C)
Figure 9. Normalized Maximum Transient
Thermal Impedance
1
°
C/W
Pulse Width (s)
TEL
：
0755-29961263
TFX:0755-29961466(A1559)
