GOFORD-GT700P08S
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GT700P08S
P-Channel Enhancement Mode Power MOSFET
Description
The GT700P08S uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge. It can be used in
a wide variety of applications.
Schematic diagram
General Features
l
V
DS
l
I
D
(at V
GS
= -10V)
l
R
DS(ON)
(at V
GS
= -10V)
-80V
-6.5A
< 72mΩ
l
100% Avalanche Tested
l
RoHS Compliant
Application
pin assignment
l
Power switch
l
DC/DC converters
SOP-8
Ordering Information
Device
Package
SOP-8
Marking
Packaging
4000pcs/Reel
GT700P08S
GT700P08
Absolute Maximum Ratings
T
C
= 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DS
-80
V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
I
D
-6.5
-26
A
A
V
(note1)
I
DM
V
GS
±
20
Power Dissipation
P
D
3
W
Single pulse avalanche energy
（
note2
）
E
AS
196
mJ
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 To 150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
41.6
TEL
：
0755-29961263
FAX:0755-29961466(A1557)
GT700P08S
Specifications
T
J
= 25ºC, unless otherwise noted
Value
Parameter
Symbol
Test Conditions
Unit
Min.
Typ.
Max.
Static Parameters
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
V
(BR)DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -80V, V
GS
= 0V
V
GS
=
±
20V
-80
—
—
—
—
-1
V
μA
nA
V
I
GSS
—
—
±
100
-3.5
72
Gate-Source Threshold Voltage
Drain-Source On-Resistance
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -2A
-2
—
-2.5
60
mΩ
g
FS
V
DS
= -5V,I
D
= -2A
—
8
—
S
Forward Transconductance
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
Q
g
—
—
—
—
—
—
—
—
—
—
1624
121
5
—
—
—
—
—
—
—
—
—
—
V
GS
= 0V,
V
DS
= -40V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
pF
nC
75
16
19
18
20
55
35
V
DD
= -30V,
I
D
= -2A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
Turn-on Delay Time
Turn-on Rise Time
V
DD
= -30
V
,
I
D
= -2A,
R
G
= 3Ω
ns
Turn-off Delay Time
Turn-off Fall Time
t
d(off)
t
f
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
Body Diode Voltage
I
S
V
SD
Q
rr
T
rr
T
C
= 25ºC
—
—
—
—
—
—
-6.5
-1.2
—
A
V
T
J
= 25ºC, I
SD
= -2A, V
GS
= 0V
Reverse Recovery Charge
71
49
nC
ns
I
F
= -20A, V
GS
= 0V
di/dt=-100A/us
Reverse Recovery Time
—
Notes
1. Repetitive
Rating: Pulse width limited by maximum junction temperature
2. Identical
low side and high side switch with identical R
G
3. EAS
condition : Tj=25
℃
,VDD=-50V,VGS=-10V,L=0.5mH,Rg=25Ω
TEL
：
0755-29961263
FAX:0755-29961466(A1557)
GT700P08S
Gate Charge Test Circuit
Switch Time Test Circuit
EAS Test Circuit
TEL
：
0755-29961263
FAX:0755-29961466(A1557)
GT700P08S
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
-10V
-6V
V
GS
= -5V
-5V
-4.5V
-4V
25
℃
V
GS
= -3.5V
0
0
0
1
2
3
4
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
, Gate-to-Source Voltage (V)
Figure 3.Drain Source On Resistance
Figure 4. Gate Charge
110
100
90
10
8
V
DS
=-30V
I
D
=-2A
80
6
70
V
GS
=-10V
4
60
50
2
40
30
0
0
1
2
3
4
0
20
40
60
80
-I
D
-Drain Current (A)
Qg Gate Charge
（
nC
）
Figure 5. Capacitance
Figure 6. Source-Drain Diode Forward
2000
1800
1600
1400
1200
1000
800
Ciss
T
J
= 150
º
C
T
J
= 25
º
C
600
Coss
Crss
400
200
0
0
20
40
60
80
-V
DS
Drain-Source Voltage(V)
-V
SD
, Source-to-Drain Voltage (V)
TEL
：
0755-29961263
FAX:0755-29961466(A1557)
GT700P08S
Typical Characteristics
T
J
= 25
º
C, unless otherwise noted
Figure 10. Safe Operation Area
Figure 7. Drain-Source On-Resistance
T
J
, Junction Temperature (
º
C)
-V
DS
, Drain-Source Voltage(V)
Figure 9. Normalized Maximum Transient
Thermal Impedance
Pulse Width (s)
TEL
：
0755-29961263
FAX:0755-29961466(A1557)
