GOODWORK-16N65F
| Part # | GOODWORK-16N65F |
Download  | GOODWORK-16N65F |
16N65F
N-Channel Enhancement Mode MOSFET
Features
●
650V,16A
TO-220F
(FULLYINSULATED)
.189
●
R
DS(ON)
= 0.48
Ω
(Typ.) @ V
GS
= 10V, I
D
=8A
●
Fast Switching
f
3.4 MAX.
MAX.
MAX.
.412
(4.8)
.122
HOLE THRU
(10.5)
MAX.
(3.1)
.138
(3.5)
●
Improved dv/dt Capability
●
100% Avalanche
T
e
sted
.276
MAX.
(7.0)
MAX.
.630
(16.0)
MAX.
Application
.550
.060
MAX.
MAX.
(14.0)
●
Switch Mode Power Supply(SMPS)
●
Uninterruptible Power Supply(UPS)
(1.5)
.158
(4.0)
MAX.
.035
(0.9)
MAX.
2
.
D
rain
●
Power Factor Correction (PFC)
.100
(2.54)
.133(3.4)
.102(2.6)
2
1
3
Dimensions in inches and (millimeters)
1.Gate
3
.
Source
Absolute Maximum Ratings
(T
C
=25
℃
unless otherwise specified)
Symbol
V
DSS
Parameter
Drain-Source Voltage
Max.
650
Units
V
V
GSS
Gate-Source Voltage
±30
V
T
C
= 25
℃
16
A
I
D
Continuous Drain Current
Pulsed Drain Current
note1
T
C
= 100
℃
10
A
I
DM
E
AS
P
D
64
A
Single Pulsed Avalanche Energy
note2
461
mJ
W
Power Dissipation
T
C
= 25
℃
98
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.3
℃
/W
℃
/W
℃
62.5
-55 to +150
T
J
, T
STG
Operating and Storage Temperature Range
REV 1.0 2019 JAN
PAGE:1/4
16N65F
Electrical Characteristics
(T
J
=25
℃
unless otherwise specified)
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristic
V
(BR)DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
GS
=0V, I
D
=250
μ
A
V
DS
=650V, V
GS
=0V,
T
J
=25
℃
650
–
–
–
–
1
V
–
–
μ
A
nA
I
GSS
V
DS
=0V, V
GS
= ±30V
±100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250
μ
A
2
–
3
4
V
Static Drain-Source on-Resistance
R
DS(on)
V
GS
=10V, I
D
=8A
0.48
0.55
Ω
note3
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Input Capacitance
–
–
–
–
–
–
2740
214
15
–
–
–
–
–
–
pF
pF
pF
nC
nC
nC
V
DS
=25V, V
GS
=0V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
Total Gate Charge
71
V
DD
=520V, I
D
=16A,
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain(“Miller”) Charge
10
V
GS
=10V
32
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
35
50
–
–
–
–
ns
ns
ns
ns
V
DD
=325V, I
D
=16A,
R
G
=25
Ω
160
65
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain to Source Diode Forward
I
S
–
–
–
–
–
–
16
64
A
A
V
Current
I
SM
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward
V
GS
=0V, I
SD
=16A
V
SD
1.4
Voltage
t
rr
Reverse Recovery Time
–
–
430
6.5
–
–
ns
V
GS
=0V, I
S
=16A,
di/dt=100A/
μ
s
Q
rr
Reverse Recovery Charge
μ
C
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction
T
e
mperature
2. EAS condition: T
J
= 25°C, V
DD
= 80V, V
G
= 10V, L= 10mH, I
AS
= 9.6A
3. Pulse
T
est: Pulse Width
≤
300
μ
s, Duty Cycle
≤
1%
REV 1.0 2019 JAN
PAGE:2/4
RATIN
G
A
ND CHARACTERISTIC CURVES (16N65F)
Figure 2:
Typical Transfer Characteristics
Figure1:
Output Characteristics
I
D
(A)
I
D
(A)
25
20
15
25
20
T
J
=25
℃
20V
10V
8V
7V
6V
5V
15
10
T
J
=150
℃
10
5
5
0
V
GS
(V)
V
DS
(V)
9
0
0
3
6
12
15
18
0
2
4
6
8
10
Figure 4
: Body Diode Characteristics
Figure 3:
On-resistance vs. Drain Current
R
DS(ON)
(
Ω
)
I
S
(A)
100
10
0.8
0.6
T
J
=150
℃
T
J
=25
℃
V
GS
=10V
0.4
0.2
0
1
0
I
D
(A)
10
V
SD
(V)
0.8
0.2
0.4
0.6
1
1.2
1.4
0
5
15
20
Figure 5:
Gate Charge Characteristics
Figure 6:
Capacitance Characteristics
V
GS
(V)
C(pF)
10
4
10
8
V
DS
=520V
I
D
=16A
C
iss
10
3
6
C
oss
C
rss
10
2
10
1
10°
4
2
0
Q
g
(nC)
V
DS
(V)
20
0
10
20
30
40
50
60
70
80
90
0
5
10
15
25
30
35
40
REV 1.0 2019 JAN
PAGE:3/4
RATIN
G
A
ND CHARACTERISTIC CURVES (16N65F)
Figure 7:
Normalized Breakdown Voltage vs.
Figure 8:
Normalized on Resistance vs.
Junction Temperature
Junction Temperature
R
DS
(on)
V
BR(DSS)
2.5
1.3
1.2
1.1
1.0
2.0
1.5
1.0
0.5
0.9
0
Tj (
℃
)
Tj (
℃
)
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
Figure 10:
Maximum Continuous Drain Current
Figure 9:
Maximum Safe Operating Area
vs. Case Temperature
I
D
(A
)
I
D
(A
)
20
10
2
10
1
16
12
8
10
μ
s
100
μ
s
1ms
10ms
DC
10
0
10
-1
10
-2
Limited by
R
DS(on)
T
C
=25
℃
4
0
Single pulse
Tc (
℃
)
V
DS
(V)
10
0.1
1
100
1000
0
25
50
75
100
125
150
Figure.11:
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Zth
J-C
(
℃
/W)
10
1
10
0
10
-1
D=0.5
D=0.2
t1
D=0.1
t2
D=0.05
D=0.02
D=0.01
Single pulse
10
-2
Notes:
1.Duty factor D=t1/t2
2.Peak T
J
=P
DM
*Z
thJC
+T
C
T
P
(s)
10
-2
10
-3
10
10
-5
10
-4
10
-3
10
-1
10
0
10
1
-6
REV 1.0 2019 JAN
PAGE:4/4
