GOODWORK-50N06

50N06  

N-Channel Enhancement Mode MOSFET  

TO-252 Package Information  

General Features  

TO-252  

V

DS

= 60V

 

I

D

=50 A  

R

DS(ON)

< 15mΩ @ V

GS

=10V  

Application  

PIN2 D  

!

“

! ”  

“

“

!

PIN1 G  

Battery protection  

Description  

!

PIN3 S  

The 50N06D uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 4.5

V

. This  

device is suitable for use as a  

Load switch  

N-Channel MOSFET  

Uninterruptible power supply  

Battery protection or in other Switching application.  

Absolute Maximum Ratings (T

C

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Rating  

60  

Units  

V

V

DS  

Drain-Source Voltage  

V

GS  

V

Gate-Sou

r

ce Voltage  

±

20  

50  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

A

I

D

@T

C

=25

℃  

A

I

D

@T

C

=100

℃  

25  

7.4  

A

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

6

A

A

9

0  

EAS  

Single Pulse Avalanche Energy

3  

Avalanche Current  

39.2  

mJ  

A

I

AS  

28  

T

o

tal Power Dissipation

4  

45  

2

W

W

℃

℃

℃

/W  

P

D

@T

C

=25

℃  

P

D

@T

A

=25

℃  

T

STG  

T

o

tal Power Dissipation

4  

Storage

T

e

mperature Range  

Operating Junction

T

e

mperature Range  

Thermal Resistance Junction-Ambient

1  

-55 to 150  

-55 to 150  

62  

T

J  

R

θ

JA  

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PAGE:1/4  

50N06  

Symbol  

BV

DSS  

Parameter  

Conditions  

Min.  

60  

Typ.  

—  

Max.  

—  

Unit  

V

Drain-Source Breakdown Voltage  

BV

DSS

T

e

mperature Coefficient  

V

GS

=0V , I

D

=250uA  

Reference to 25

℃

, I

D

=1mA  

V

GS

=10V , I

D

=20A  

—  

0.057  

11  

—  

△

BV

DSS

/

△

T

J  

V/

℃  

—  

15  

Static Drain-Source On-Resistance

2  

Gate Threshold Voltage  

V

GS

=4.5V , I

D

=10A  

—  

1.2  

20  

—  

25  

2.5  

m

Ω

 

R

DS(ON)  

V

GS(th)  

V

△

V

GS(th)  

V

GS(th)

T

e

mperature Coefficient  

—  

—  

-5.68  

—  

—  

1

mV/

℃  

V

GS

=V

DS

, I

D

=250uA  

V

DS

=48V , V

GS

=0V , T

J

=25

℃  

—  

—  

5

V

DS

=48V , V

GS

=0V , T

J

=55

℃  

I

DSS  

I

GSS  

Drain-Source Leakage Current  

Gate-Source Leakage Current  

uA  

nA  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

45  

V

GS

=

±

20V , V

DS

=0V  

V

DS

=5V , I

D

=15A  

±

100  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

35  

80  

1

gfs  

R

g  

Forward Transconductance  

Gate Resistance  

S

V

DS

=0V , V

GS

=0V , f=1MHz  

1.7  

19.3  

7.1  

7.6  

7.2  

50  

Ω

Q

g  

T

o

tal Gate Charge (4.5V)  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

T

d(on)  

T

r  

V

DS

=48V , V

GS

=4.5V , I

D

=15A  

nC  

ns  

Turn-On Delay Time  

Rise Time  

V

DD

=30V , V

GS

=10V ,  

R

G

=3.3  

I

D

=15A  

,

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

36.4  

7.6  

2423  

145  

97  

C

iss  

C

oss  

C

rss  

I

S  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Continuous Source Current

1,5  

Pulsed Source Current

2,5  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

V

DS

=15V , V

GS

=0V , f=1MHz  

pF  

—  

A

A

V

G

=V

D

=0V , Force Current  

I

SM  

V

SD  

t

rr  

—  

—  

V

V

GS

=0V , I

S

=A , T

J

=25

℃  

16.3  

11  

—  

—  

nS  

nC  

I

F

=15A  

,

dI/dt=100A/µs  

,

Q

rr  

T

J

=25

℃  

Note :  

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ coppe

r

.  

2.The data tested by pulsed , pulse width

≦

300us , duty cycle

≦

2%  

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A  

4.The power dissipation is limited by 150

℃

junction temperature 5.The data is theoretically the same as ID  

and IDM , in real applications , should be limited by total power dissipation  

REV 1.0 2017 JAN  

PAGE:2/4  

50N06  

Typical Characteristics  

20  

I

D

=12A  

19  

18  

17  

16  

15  

4

6

8

10  

V

GS

(V)  

Fig.2 On-Resistance v.s Gate-Source  

Fig.1 Typical Output Characteristics  

12  

10  

8

6

T

J

=150

℃

 

T

J

=25

℃  

4

2

0

0.2  

0.4  

0.6  

0.8  

1

V

SD

, Source-to-Drain Voltage (V)  

Fig.3 Forward Characteristics of Reverse  

Fig.4 Gate-Charge Characteristics  

2.0  

1.5  

1.0  

0.5  

1.5  

1

0.5  

0

-50  

0

50  

100  

150  

-50  

0

50  

100  

150  

T

J

,Junction Temperature (

℃

)  

T

J

, Junction Temperature (

℃

)  

Fig.5 Normalized V

GS(th)

v.s T

J  

Fig.6 Normalized R

DSON

v.s T

J  

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PAGE:3/4  

50N06  

Typical Characteristics  

10000  

1000  

100  

F=1.0MHz  

Ciss  

Coss  

Crss  

10  

1

5

9

13  

17  

21  

25  

V

DS

Drain to Source Voltage(V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.3  

0.1  

0.1  

0.05  

0.02  

P

DM  

T

ON  

T

0.01  

D = T

ON

/T  

S

I

NGLE PULSE  

T

J

peak = T

C

+ P

DM

x R

θJC  

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

1

2

BV

DSS  

BV

DSS

-V

DD  

EAS=  

BV

DSS  

L x I

AS

2

x  

V

DS  

90%  

V

DD  

I

AS  

10%  

V

GS  

T

d(on)  

T

r  

T

on  

T

d(off)  

T

f  

T

off  

V

GS  

Fig.11 Unclamped Inductive Switching Waveform  

Fig.10 Switching Time Waveform  

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