GOODWORK-5N10

5N10  

N-Channel Enhancement Mode Field Effect Transistor  

Applications  

●

Consumer electronic power supply  

●

Motor control  

●

Synchronous-rectification  

●

Isolated DC/DC convertor  

●

Invertors  

A

M

D

General Description  

●

Low R

DS(on)

& FOM  

●

Extremely low switching loss  

●

Excellent stability and uniformity  

●

Fast switching and soft recovery  

e

e

C

a

E

L

1  

L

H

E  

Product Summary  

●

V

DS  

100V  

●

I

D  

5

.0A  

●

R

DS(ON)

( at V

GS

=10V)  

＜

140 mohm  

SOT-23 mechanical

 

data  

A

C

D

E

H

E  

e

M

L

L

1  

a

UNIT  

max  

1.1 0.15 1.4

 

3.0 2.6 0.5

 

1.95  

0.0  

0.55 0.36  

(ref) (ref)  

mm  

mil  

min

0.9 0.08

1.2

2.8 2.2 0.3 1.7  

0.15  

0.0  

6

max  

43  

6

3

55 118

 

102 20

 

77  

47 110 87

 

12 67  

22  

14  

(ref) (ref)  

min

35  

Absolute Maximum Ratings

(T =25

℃

unless otherwise noted)  

■

A

Parameter  

Symbol  

Limit  

Unit  

Drain-source Voltage  

Gate-source Voltage  

V

DS  

V

GS  

100  

±

20  

5

.0  

V

V

T

A

=25

℃  

Drain Current  

I

D  

A

T

A

=70

℃  

2.4  

Pulsed Drain Current

A  

I

DM  

P

D  

21  

A

Total Power Dissipation @ T

A

=25

℃  

1.2  

W

B

Thermal Resistance Junction-to-Ambient  

Junction and Storage Temperature Range  

R

θ

JA  

104  

℃

/

W  

T

J

,T

STG  

-55

～

+150  

℃

REV 1.0 2020 JAN  

PAGE:1/4  

5N10  

Electrical Characteristics

(T =25

℃

unless otherwise noted)  

■

J

Parameter  

Symbol  

Conditions  

Min  

Typ  

Max  

Units  

Static Parameter  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Body Leakage Current  

Gate Threshold Voltage  

BV

DSS  

V

GS

= 0V, I

D

=250

μA  

V

DS

=100V,V

GS

=0V  

V

GS

=

±

20V, V

DS

=0V  

V

DS

= V

GS

, I

D

=250

μA  

V

GS

= 10V, I

D

=3.0A  

V

GS

= 4.5V, I

D

=2.0A  

I

S

=3.0A,V

GS

=0V  

100  

V

I

DSS  

1

μA  

nA  

V

I

GSS  

±

100  

3.0  

V

GS(th)  

1.0  

1.8  

110  

160  

0.8  

140  

300  

1.2  

Static Drain-Source On-Resistance  

R

DS(ON)  

m

Ω  

Diode Forward Voltage  

Maximum Body-Diode Continuous Current  

Dynamic Parameters  

Input Capacitance  

V

SD  

V

A

I

S  

3.0  

C

iss  

C

oss  

C

rss  

206  

29  

Output Capacitance  

V

DS

=50V,V

GS

=0V,f=1MHZ  

pF  

Reverse Transfer Capacitance  

Switching Parameters  

T

o

tal Gate Charge  

1.4  

Q

g  

Q

gs  

Q

gd  

t

D(on)  

t

r  

4.3  

1.5  

1.1  

14.7  

3.5  

20.9  

2.7  

32  

Gate-Source Charge  

V

GS

=10V,V

DS

=50V,I

D

=3.0A  

nC  

Gate-Drain Charge  

Turn-on Delay Time  

Turn-on Rise Time  

V

GS

=10V,V

DD

=50V, I

D

=3.0A,  

ns  

R

GEN

=2

Ω  

Turn-off Delay Time  

t

D(off)  

Turn-off fall Time  

t

f  

Reverse recovery time  

Reverse recovery charge  

Peak reverse recovery current  

t

rr  

ns  

nC  

A

Q

rr  

I

rrm  

I

S

=3A,di/dt=100 A/

μ

s  

39  

2.1  

A. Pulse

 

Test: Pulse Width

≤

300us,Duty cycle

≤

2%.  

B. Device

 

mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.  

REV 1.0 2020 JAN  

PAGE:2/4  

RATIN

G

A

ND CHARACTERISTIC CURVES (5N10)  

Figure1. Output

 

Characteristics  

Figure2. Transfer

 

Characteristics  

Figure3. Capacitance

 

Characteristics  

Figure5. Drain-Source breakdown voltage  

Figure7. Forward characteristic of body diode  

Figure4. Gate Charge  

Figure6. Drain-Source on Resistance  

Figure8. Drain-source on-state resistance  

REV 1.0 2020 JAN  

PAGE:3/4  

RATIN

G

A

ND CHARACTERISTIC CURVES (5N10)  

Figure9. Safe Operation Area T

A

=25

℃

 

Figure10. Switching wave  

REV 1.0 2020 JAN  

PAGE:4/4