GOODWORK-AO3400

AO3400  

SO

T

-23 Plastic-Encapsulate

MOSFETS  

FEATURE  

z

z

z

z

High density cell design for low R

DS(ON)  

Voltage controlled small signal switch  

A

Rugged and reliable  

High saturation current capability  

M

D

SOT-23  

e

e

C

a

E

L

1  

L

1. GATE  

H

E  

2. SOURCE  

3. DRAIN  

Equivalent Circuit  

SOT-23 mechanical

 

data  

A

C

D

E

H

E  

e

M

L

L

1  

a

UNIT  

Marking  

max  

1.1 0.15 1.4

 

3.0 2.6 0.5

 

1.95  

0.0  

0.55 0.36  

(ref) (ref)  

mm  

mil  

min

0.9 0.08

1.2

2.8 2.2 0.3 1.7  

0.15  

0.0  

6

Type number  

AO3400  

Marking code  

AO9T  

max  

43  

6

3

55 118

 

102 20

 

77  

47 110 87

 

12 67  

22  

14  

(ref) (ref)  

min

35  

Maximum ratings ( T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Value  

Unit  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

V

GS  

I

D  

30  

±12  

V

V

A

A

W

Continuous Drain Current  

5.8  

Drain Current-Pulsed

(note 1)  

Power Dissipation  

I

DM  

P

D  

30  

1.5  

Thermal Resistance from Junction to Ambient

(note 2)  

Junction Temperature  

R

θ

JA  

T

J  

357  

℃

/W  

℃

150  

Storage Temperature  

T

STG  

-55~+150  

℃

REV 1.0 2021 JAN  

PAGE:1/3  

AO3400  

Electrical characteristics (T

a

=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Units  

Off Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-source leakage current  

On characteristics  

V

(BR) DSS  

V

GS

= 0V, I

D

=250µA  

V

DS

=24V,V

GS

= 0V  

V

GS

=±12V, V

DS

= 0V  

30  

V

I

DSS  

1

µA  

nA  

I

GSS  

±100  

V

GS

=10V, I

D

=5.8A  

V

GS

=4.5V, I

D

=5A  

V

GS

=2.5V,I

D

=4A  

V

DS

=5V, I

D

=5A  

28  

35  

40  

52  

m

Ω

 

m

Ω  

m

Ω  

S

Drain-source on-resistance  

(note 3)  

R

DS(on)  

8

Forward tranconductance  

Gate threshold voltage  

Dynamic Characteristics

 

(note 4,5)  

Input capacitance  

g

FS  

V

GS(th)  

V

DS

=V

GS

, I

D

=250µA  

0.7  

1.4  

V

C

iss  

C

oss  

C

rss  

R

g  

1050  

pF  

pF  

pF  

Ω

V

DS

=15V,V

GS

=0V,f =1MHz  

V

DS

=0V,V

GS

=0V,f =1MHz  

Output capacitance  

99  

77  

Reverse transfer capacitance  

Gate resistance  

3.6  

Switching Characteristics

 

(note 4,5)  

Turn-on delay time  

t

d(on)  

t

r  

5

7

ns  

ns  

ns  

ns  

Turn-on rise time  

V

GS

=10V,V

DS

=15V,  

R

L

=2.7

ꢀ

,R

GEN

=3

ꢀ  

Turn-off delay time  

t

d(off)  

t

f  

40  

6

Turn-off fall time  

Drain-source diode characteristics and maximum ratings  

1

Diode forward voltage

(note 3)  

V

SD  

I

S

=1A,V

GS

=0V  

V

Note :  

1. Repetitive

 

Rating : Pulse width limited by maximum junction temperature.  

2. Surface

 

Mounted on FR4 Board, t < 5 sec.  

3. Pulse

 

T

e

st : Pulse Width

≤

300µs, Duty Cycle

≤

2%.  

4. Guaranteed

 

by design, not subject to production testing.  

REV 1.0 2021 JAN  

PAGE:2/3  

RATIN

G

AND CHARACTERISTIC CURVES (AO3400)  

Transfer Characteristics  

Output Characteristics  

24  

20  

16  

12  

8

5

4

3

2

1

0

T

a

=25  

℃

T

a

=25  

℃

V

GS

=7V~3V  

Pulsed  

Pulsed  

V

GS

=2.5V  

V

GS

=2V  

4

V

GS

=1.5V  

0

0

2

4

6

8

10  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

R

DS(ON)  

R

DS(ON)

——  

I

D  

V

GS  

——  

200  

150  

100  

50  

500  

400  

300  

200  

100  

0

T

a

=25  

℃

T

a

=25  

℃

Pulsed  

Pulsed  

V

GS

=2.5V  

I

D

=5A  

V

GS

=4.5V  

V

GS

=10V  

0

0

5

10  

15  

20  

25  

0

2

4

6

8

10  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

DRAIN CURRENT

 

I

D

(A)  

I

S  

—— V

SD  

10  

T

a

=25

℃

 

Pulsed  

1

0.1  

0.01  

1E-3  

0.0  

0.3  

0.6  

0.9  

1.2  

SOURCE TO DRAIN VOLTAGE

 

V

SD

(V)  

REV 1.0 2021 JAN  

PAGE:3/3