GOODWORK-AO4407

AO4407  

30V P-Channel

 

MOSFET  

General Description  

Product Summary  

V

DS  

-30V  

The AO4407 combines advanced trench MOSFET  

technology with a low resistance package to provide  

extremely low R

DS(ON)

. This

 

device is ideal for load switch  

and battery protection applications.  

I

D

(at V

GS

=-20V)  

R

DS(ON)

(at V

GS

=-20V)  

R

DS(ON)

(at V

GS

=-10V)  

R

DS(ON)

(at V

GS

=-5V)  

-12A  

< 13m

Ω

 

< 14m

Ω  

< 30m

Ω  

* RoHS and Halogen-Free Compliant  

100% UIS Tested  

100% R

g

Tested  

SOIC-8  

D

Top View  

Bottom View  

D

D

D

D

G

G

S

S

S

S

Absolute Maximum Ratings

 

T

A

=25

°

C

u

nless otherwise noted  

Parameter  

Symbol  

Maximum  

Units  

Drain-Source Voltage  

V

DS  

-30  

V

V

Gate-Source Voltage  

V

GS  

±25  

-12  

T

A

=25

°

C  

T

A

=70

°

C  

Continuous Drain  

Current  

I

D  

-10  

A

Pulsed Drain Current

C  

I

DM  

-60  

Avalanche Current

C  

I

AS

, I

AR  

E

AS

, E

AR  

26  

A

Avalanche energy L=0.3mH

C  

T

A

=25

°

C  

Power Dissipation

B  

101  

mJ  

3.1  

P

D  

W

°C  

T

A

=70

°

C  

2

Junction and Storage Temperature Range  

T

J

, T

STG  

-55 to 150  

Thermal Characteristics  

Parameter  

Symbol  

Typ  

31  

Max  

40  

Units  

°

C

/W  

°

C

/W  

°

C

/W  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A D  

Maximum Junction-to-Lead  

t

≤

10s  

R

θ

JA  

Steady-State  

Steady-State  

59  

75  

R

θ

JL  

16  

24  

Rev.14.0: July 2013  

Page 1 of 5  

AO4407  

Electrical Characteristics (T

J

=25

°

C

u

nless otherwise noted)  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max Units  

STATIC PARAMETERS  

I

D

=-250

µ

A, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

-30  

V

V

DS

=-30V, V

GS

=0V  

-1  

µ

A  

-5  

I

DSS  

Zero Gate Voltage Drain Current  

T

J

=55

°

C  

V

DS

=0V, V

GS

= ±25V  

V

DS

=V

GS

I

D

=-250

µ

A  

V

GS

=-10V, V

DS

=-5V  

V

GS

=-20V, I

D

=-12A  

V

GS

=-10V, I

D

=-12A  

I

GSS  

Gate-Body leakage current  

Gate Threshold Voltage  

On state drain current  

±100  

-2.8  

nA  

V

V

GS(th)  

I

D(ON)  

-1.7  

-60  

-2.25  

A

8.5  

10  

13  

14  

19  

30  

m

Ω  

R

DS(ON)  

Static Drain-Source On-Resistance  

m

Ω  

T

J

=125

°

C  

12  

V

GS

=-5V, I

D

=-7A  

19  

m

Ω  

S

V

DS

=-5V, I

D

=-10.5A  

I

S

=-1A,V

GS

=0V  

g

FS  

V

SD  

I

S  

Forward Transconductance  

Diode Forward Voltage  

27  

-0.72  

-1  

-4  

V

Maximum Body-Diode Continuous Current  

A

DYNAMIC PARAMETERS  

C

iss  

C

oss  

C

rss  

R

g  

Input Capacitance  

2060 2600  

pF  

pF  

pF  

Ω

V

GS

=0V, V

DS

=-15V, f=1MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate resistance  

370  

295  

V

GS

=0V, V

DS

=0V, f=1MHz  

1.2  

24  

2.4  

3.6  

36  

SWITCHING PARAMETERS  

Q

g  

Q

gs  

Q

gd  

t

D(on)  

t

r  

Total Gate Charge  

Gate Source Charge  

Gate Drain Charge  

Turn-On DelayTime  

Turn-On Rise Time  

Turn-Off DelayTime  

Turn-Off Fall Time  

30  

4.6  

10  

11  

9.4  

24  

12  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

V

GS

=-10V, V

DS

=-15V, I

D

=-12A  

V

GS

=-10V, V

DS

=-15V,  

R

L

=1.25

Ω

, R

GEN

=3

Ω  

t

D(off)  

t

f  

t

rr  

I

F

=-12A, dI/dt=100A/

µ

s  

I

F

=-12A, dI/dt=100A/

µ

s  

Body Diode Reverse Recovery Time  

Body Diode Reverse Recovery Charge  

30  

22  

40  

ns  

Q

rr  

nC  

A. The value of R

θ

JA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25

°

C. The  

value in any given application depends on the user’s specific board design.  

B. The power dissipation P

D

is based on T

J(MAX)

=150

°

C, using

≤

10s junction-to-ambient thermal resistance.  

C. Repetitive

 

rating, pulse width limited by junction temperature T

J(MAX)

=150

°

C. Ratings are based on low frequency and duty cycles to keep  

initialT

J

=25

°

C.  

D. The R

θ

JA

is the sum of the thermal impedence from junction to lead R

θ

JL

and lead to ambient.  

E. The static characteristics in Figures 1 to 6 are obtained using <300

µ

s pulses, duty cycle 0.5% max.  

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with  

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150

°

C. The SOA curve provides a single pulse rating.  

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL  

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING  

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.

 

AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,  

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.  

Rev.14.0: July 2013  

Page 2 of 5  

AO4407  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

80  

60  

40  

20  

0

80  

60  

40  

20  

0

-10V  

V

DS

=-5V  

-6V  

-5V  

-4.5V  

125

°

C  

-4V  

V

GS

=-3.5V  

4

25

°

C  

1

2

3

4

5

6

0

1

2

3

5

V

GS

(Volts)  

-V

DS

(Volts)  

Fig 1: On-Region Characteristics (Note E)  

Figure 2: Transfer Characteristics (Note E)  

30  

1.6  

1.4  

1.2  

1

25  

20  

15  

10  

5

V

GS

=-10V  

I

D

=-12A  

V

GS

=-5V  

17  

5

2

10  

V

GS

=-5V  

V

GS

=-10V  

I

D

=-7A  

0

0.8  

0

5

10  

15  

20  

0

25  

50  

75  

100  

125  

150  

175  

-I

D

(A)  

0

18  

Temperature (

°

C

)  

Figure 3: On-Resistance vs. Drain Current and Gate  

Voltage (Note E)  

Figure 4: On-Resistance vs. Junction Temperature  

(Note E)  

30  

25  

20  

15  

10  

5

1.0E+01  

I

D

=-12A  

1.0E+00  

40  

1.0E-01  

1.0E-02  

1.0E-03  

1.0E-04  

1.0E-05  

125

°

C  

125

°

C  

25

°

C  

25

°

C  

0.0  

0.2  

0.4  

-V

SD

(Volts)  

Figure 6: Body-Diode Characteristics (Note E)  

0.6  

0.8  

1.0  

1.2  

2

4

6

8

10  

-V

GS

(Volts)  

Figure 5: On-Resistance vs. Gate-Source Voltage  

(Note E)  

Rev.14.0: July 2013  

Page 3 of 5  

AO4407  

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS  

3000  

10  

V

DS

=-15V  

I

D

=-12A  

2500  

2000  

1500  

1000  

500  

8

C

iss  

6

4

C

oss  

2

C

rss  

0

0

0

5

10  

15  

Q

g

(nC)  

20  

25  

30  

0

5

10  

15  

20  

25  

30  

-V

DS

(Volts)  

Figure 7: Gate-Charge Characteristics  

Figure 8: Capacitance Characteristics  

1000.0  

100.0  

10.0  

1.0  

10000  

1000  

100  

10  

T

A

=25

°

C  

10

µ

s  

R

DS(ON)  

limited  

100

µ

s  

1ms  

10ms  

T

J(Max)

=150

°

C  

T

A

=25

°

C  

10s  

DC  

0.1  

1

0.0  

0.00001  

0.001  

0.1  

10  

1000  

0.01  

0.1  

1

10  

100  

V

DS

(Volts)  

Pulse Width (s)  

Figure 10: Single Pulse Power Rating Junction-to-  

Ambient (Note F)  

Figure 9: Maximum Forward Biased Safe  

Operating Area (Note F)  

10  

1

D=T

on

/T  

T

J,PK

=T

A

+P

DM

.Z

θ

JA

.R

θ

JA  

In descending order  

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse  

R

θ

JA

=75

°

C/W  

0.1  

P

D  

0.01  

0.001  

Single Pulse  

0.001  

T

on  

T

0.00001  

0.0001  

0.01  

0.1  

1

10  

100  

1000  

Pulse Width (s)  

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)  

Rev.14.0: July 2013  

Page 4 of 5  

AO4407  

Gate Charge Test Circuit & Waveform  

Vgs  

Qg  

10V  

+

VDC  

+

Qgs  

Qgd  

Vds  

VDC  

–

–

DUT  

Vgs  

Ig  

Charge  

Resistive Switching Test Circuit & Waveforms  

RL  

Vds  

Vds  

90%  

10%  

+

DUT  

Vdd  

Vgs  

VDC  

Rg  

–

Vgs  

Vgs  

t

d(on)  

t

r

t

d(off)  

t

f

t

on  

t

off  

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms  

L

E

AR

= 1/2 L

I

A

2

R  

B

V

DSS  

Vds  

Id  

Vgs  

Vds  

+

Vgs  

Vdd  

I

AR  

VDC  

Id  

Rg  

–

DUT  

Vgs  

Vgs  

Diode Recovery Test Circuit & Waveforms  

Q

rr

= –

 

Idt  

Vds +  

Vds –  

Ig  

DUT  

Vgs  

t

rr  

L

Isd  

I

F  

Isd  

Vgs  

dI/dt  

I

RM  

+

Vdd  

VDC  

Vdd  

–

Vds  

Rev.14.0: July 2013  

Page 5 of 5  

8

1

RECOMMENDED LAND PATTERN  

DIMENSIONS IN MILLIMETERS  

DIMENSIONS IN INCHES  

SYMBOLS  

MIN NOM

 

MAX  

MIN NOM MAX  

A

A1  

A2  

b

c

D

E

1.35  

0.10  

1.25  

0.31  

0.17  

4.80 4.90  

3.80 3.90  

1.27 BSC  

1.65  

0.15  

1.50  

0.41  

0.20  

1.75  

0.25  

1.65  

0.51  

0.25  

5.00  

4.00  

0.053 0.065 0.069  

0.004 0.006 0.010  

0.049 0.059 0.065  

0.012 0.016 0.020  

0.007 0.008 0.010  

0.189 0.193 0.197  

0.150 0.154 0.157  

0.050 BSC  

e

E1  

h

L

5.80  

0.25  

0.40  

0

°

 

6.00  

0.30  

0.69  

4

°  

6.20  

0.50  

1.27  

8

°  

0.228 0.236 0.244  

0.010 0.012 0.020  

0.016 0.027 0.050  

q

0

°  

4

°  

8

°  

UNIT: mm  

NOTE  

1. ALL DIMENSIONS ARE IN MILLMETERS.  

2. DIMENSIONS ARE INCLUSIVE OF PLATING.  

3. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS.  

MOLD FLASH AT THE NON-LEAD SIDES SHOULD BE LESS THAN 6 MILS EACH.  

4. DIMENSION L IS MEASURED IN GAUGE PLANE.  

5. CONTROLLING DIMENSION IS MILLIMETER.  

CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT.  

AOS Semiconductor  

Product Reliability Report  

AO4407 /

AO4407L,

rev D  

Plastic Encapsulated Device  

ALPHA & OMEGA Semiconductor, Inc  

495 Mercury Drive  

Sunnyvale, CA 94085  

U.S.  

Tel: (408) 830-9742  

Dec 27, 2005  

1

This AOS product reliability report summarizes the qualification result for AO4407. Accelerated  

environmental tests are performed on a specific sample size, and then followed by electrical test  

at end point. Review of final electrical test result confirms that AO4407 passes AOS quality and  

reliability requirements. The released product will be categorized by the process family and be  

monitored on a quarterly basis for continuously improving the product quality.  

Table of Contents:  

I.  

Product Description  

II.  

Package and Die information  

Environmental Stress Test Summary and Result  

Reliability Evaluation  

III.  

IV.  

V.  

Quality Assurance Information  

I. Product

 

Description:  

The AO4407 uses advanced trench technology to provide excellent R

DS(ON)

, and ultra-low low  

gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM  

applications. Standard Product AO4407 is Pb-free (meets ROHS & Sony 259 specifications).  

AO4407L is a Green Product ordering option. AO4407 and AO4407L are electrically identical.  

Absolute Maximum Ratings

 

T

A

=25°C unless otherwise noted  

Parameter  

Symbol  

Maximum  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

DS  

-30  

V

V

V

GS  

±25  

-12  

T

A

=25°C  

T

A

=70°C  

Continuous Drain  

Current  

A

I

D  

-10  

Pulsed Drain Current  

I

DM  

-60  

T

A

=25°C  

T

A

=70°C  

3

P

D  

W

Power Dissipation  

Junction and Storage  

Temperature Range  

2.1  

T

J

, T

STG  

-55 to 150  

°C  

Thermal Characteristics  

Parameter  

Maximum Junction-to-  

Ambient  

Maximum Junction-to-  

Ambient  

Symbol  

Typ  

28  

Max  

40  

Units  

°C/W  

°C/W  

°C/W  

T

≤

10s  

R

θ

JA  

Steady-  

State  

Steady-  

State  

54  

75  

Maximum Junction-to-Lead  

R

θ

JL  

21  

30  

2

II. Die / Package Information:  

AO4407  

AO4407L (Green Compound)  

Process  

Standard sub-micron  

Standard sub-micron  

low voltage P channel process

 

low voltage P channel process  

Package Type  

8 leads SOIC  

8 leads SOIC  

Lead Frame  

Die Attach  

Bond wire  

Mold Material  

Filler % (Spherical/Flake)  

Flammability Rating  

Backside Metallization  

Moisture Level  

Ag with Solder Plate  

Silver-filled Epoxy  

2 mils Au wire  

Epoxy resin with silica filler  

90/10  

UL-94 V-0  

Ti / Ni / Ag  

Up to Level 1 *  

Ag with Solder Plate  

Silver-filled Epoxy  

2 mils Au wire  

Epoxy resin with silica filler  

100/0  

UL-94 V-0  

Ti / Ni / Ag  

Up to Level 1*  

Note *

based on info provided by assembler and mold compound supplier  

III. Result of Reliability Stress for AO4407 (Standard) &

AO4407L (Green)  

Test Item  

Test Condition  

Time Point

 

Lot Attribution  

Total  

Number of  

Sample size

 

Failures  

Standard: 6 lots  

Green: 16 lots  

3300 pcs  

Solder  

Reflow  

Precondition  

Standard: 1hrPCT+3

 

0hr  

cycle reflow@260°c  

Green: 168hr 85°c  

/85%RH +3 cycle  

0

reflow@260°c  

Temp = 150

°c

,  

Vgs=100% of Vgsmax  

168 / 500  

hrs  

6 lots  

492 pcs  

0

HTGB  

HTRB  

77+5 pcs / lot  

1000 hrs  

(Note A*)  

6 lots  

168 / 500  

hrs  

492 pcs  

0

0

Temp = 150

°c

,  

Vds=80% of Vdsmax  

77+5 pcs / lot  

1000 hrs  

100 hrs  

(Note A*)  

Standard: 6 lots  

Green: 13 lots  

1045 pcs  

HAST  

130 +/- 2

°c

, 85%RH,  

33.3 psi, Vgs = 80% of  

Vgs max  

50+5 pcs / lot  

1155 pcs  

(Note B**)  

Standard: 5 lots  

Green: 16 lots  

(Note B**)  

96 hrs  

0

0

Pressure Pot  

121

°c

, 15+/-1 PSIG,  

RH=100%  

50+5 pcs / lot  

1100 pcs  

250 / 500  

cycles  

Standard: 5 lots  

Green: 15 lots  

Temperature  

Cycle  

-65

°c

to 150

°c

, air to  

air, 0.5hr per cycle  

50+5 pcs / lot  

(Note B**)  

3

III. Result of Reliability Stress for AO4407 (Standard) &

AO4407L (Green)  

Continues  

Internal Vision  

Cross-section  

X-ray  

NA  

5

5

5

5

5

5

0

DPA  

CSAM  

NA  

5

5

0

0

Room Temp  

150

°

C bake  

150

°

C bake  

0hr  

250hr  

500hr  

40  

40  

40  

40 wires  

40 wires  

40 wires  

Bond  

Integrity  

5 sec  

0hr  

15  

10  

Solderability  

Die Shear  

230

°c  

150

°c  

15 leads  

10  

0

0

Note A:

The HTGB and HTRB reliability data presents total of available AO4407 and

AO4407L  

burn-in data up to the published date.  

Note B:

The pressure pot, temperature cycle and HAST reliability data for AO4407 and

AO4407L  

comes from the AOS generic package qualification data.  

IV. Reliability Evaluation  

FIT rate (per billion): 7  

MTTF =16307 years  

In general, 500 hrs of HTGB, 150 deg C accelerated stress testing is equivalent to 15 years of  

lifetime at 55 deg C operating conditions (by applying the Arrhenius equation with an activation  

energy of 0.7eV and 60% of upper confidence level on the failure rate calculation). AOS reliability  

group also routinely monitors the product reliability up to 1000 hr at and performs the necessary  

failure analysis on the units failed for reliability test(s).  

The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in  

sample size of the selected product (AO3401). Failure Rate Determination is based on JEDEC  

Standard JESD 85. FIT means one failure per billion hours.  

Failure Rate

 

= Chi

2

x 10

9

/

[

2 (N) (H) (Af)

]  

= 1.83 x 10

9

/

[

2 (3×164) (168) (258) + 2 (164) (500)(258) + 2 (2

×

164) (1000) (258)

]  

= 7  

MTTF =

10

9

/ FIT = 1.42

×

10

8

hrs =16307 years  

Chi²

= Chi Squared Distribution, determined by the number of failures and confidence interval  

N

= Total Number of units from HTRB and HTGB tests  

H

= Duration of HTRB/HTGB testing  

Af

= Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)  

Acceleration Factor [

Af

] =

Exp

[Ea /

k

(1/Tj u – 1/Tj s)]  

Acceleration Factor ratio list:  

55 deg C  

70 deg C  

85 deg C  

32  

100 deg C  

13  

115 deg C  

5.64  

130 deg C  

2.59  

150 deg C  

1

Af  

258  

87  

Tj s

= Stressed junction temperature in degree (Kelvin), K = C+273.16  

Tj u

= The use junction temperature in degree (Kelvin), K = C+273.16  

k

=

Boltzmann’s constant, 8.617164 X 10

-5

e V / K  

4

V. Quality Assurance Information  

Acceptable Quality Level for outgoing inspection:

0.1%

for electrical and visual.  

Guaranteed Outgoing Defect Rate:

< 25 ppm  

Quality Sample Plan: conform to

Mil-Std-105D  

5