GOODWORK-MMBT3904

MMBT3904  

NPN TRANSISTOR  

FEATURES  

e

A

•

Complementary to MMBT3906  

M

D

e

e

C

a

E

L

1  

L

H

E  

1.BASE  

2.EMITTER  

3.COLLECTOR  

SOT-23 mechanical

 

data  

A

C

D

E

H

E  

e

M

L

L

1  

a

UNIT  

max  

1.1 0.15 1.4

 

3.0 2.6 0.5

 

1.95  

0.0  

0.55 0.36  

(ref) (ref)  

Marking  

mm  

mil  

min

0.9 0.08

1.2

2.8 2.2 0.3 1.7  

0.15  

0.0  

6

Type number  

MMBT3904  

Marking code  

1AM  

max  

43  

6

3

55 118

 

102 20

 

77  

47 110 87

 

12 67  

22  

14  

(ref) (ref)  

min

35  

MAXIMUM RATINGS (

T

a

=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Collector–Base Voltage  

Collector–Emitter Voltage  

Emitter–Base Voltage  

Collector Current — Continuous  

Collector Power Dissipation  

Value  

60  

40  

6

200  

Unit  

V

V

V

mA  

mW  

V

CBO  

V

CEO  

V

EBO  

I

C  

P

C  

200  

Thermal Resistance From Junction  

To

A

mbient  

℃/

W  

R

thJA  

625  

Operation Junction and Storage  

T

e

mperature Range  

℃

T

J

,T

stg  

-55~+150  

REV 1.0 2021 JAN  

PAGE:1/3  

MMBT3904  

CLASSIFICATION OF h

FE  

100-300  

HFE  

L

H

Rank  

Range  

200-300  

100-200  

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  

Typ  

Symbol  

Min  

Max Unit  

Test conditions  

Parameter  

Collector-base breakdown voltage  

I

C

= 10uA, I

E

= 0  

V

(BR)CEO

I

C

= 1 mA, I

B

= 0  

V

(BR)CBO  

V

V

V

60  

40  

6

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

Collector cut-off current  

I

E

= 10uA, I

C

= 0  

V

CE

= 30

V

,

V

BE(off)

=3V  

V

(BR)EBO  

I

CEX  

nA  

50  

I

CBO  

I

EBO  

V

CB

= 60

V

,

I

E

= 0  

V

EB

= 5

V

,

I

C

=0  

V

CE

= 1

V

,

I

C

=10mA  

V

CE

= 1

V

,

I

C

= 50mA  

V

CE

= 1

V

,

I

C

= 100mA  

nA  

nA  

100  

100  

300  

Emitter cut-off current  

h

FE1  

100  

60  

30  

h

FE2  

h

FE3  

DC current gain  

0.3  

V

V

V

CE(sat)  

V

BE(sat)  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

I

C

= 50mA, I

B

= 5mA  

I

C

= 50mA, I

B

= 5mA  

0.95  

V

CE

= 20

V

,

I

C

= 10mA,  

f=100MHz  

MHZ  

Transition frequency  

300  

f

T  

t

d  

t

r  

t

s  

t

f  

Delay time  

Rise time  

ns  

ns  

ns  

ns  

35  

35  

V

CC

=3

V

,

V

BE(off)

=-0.5V  

I

C

=10mA,I

B1

=1mA  

Storage time  

Fall time  

200  

50  

V

CC

= 3

V

,

I

C

= 10mA  

I

B1

=I

B2

=1mA  

REV 1.0 2021 JAN  

PAGE:2/3  

RATIN

G

A

ND CHARACTERISTIC CURVES (MMBT3904)  

Fig.2  

P

C

—— T

a  

Fig.1 Static

 

characteristics  

100  

80  

400  

200  

COMMON  

EMITTER  

I

B

=500uA  

I

I

B

B

=450uA  

=400uA  

T

a

=25

℃  

I

B

=350uA  

=300uA  

=250uA  

=200uA  

=150uA  

I

B

I

B

I

B

40  

0

I

B

I

B

=100uA  

I

B

=50uA  

0

25  

50  

75  

100  

125  

150  

4

8

12  

16  

20  

24  

AMBIENT TEMPERATURE

T

a (

℃

)  

COLLECTOR-EMITTER VOLTAGE V

CE

(V)  

Fig.4  

V

CEsat

—— I

C  

Fig.3  

C

ob

/ C

ib

—— V

CB

/

V

EB  

1000  

9

6

3

0

f=1MHz  

=0/

Ic

=0  

Ta=25

℃

 

I

E

C

ib  

100  

10  

Τ

α

=25

℃

 

β

=10  

1

C

ob  

1

0.1  

0.1  

10  

20  

1

10  

100  

1000  

REVERSE BIAS VOLTAGE V (V)  

I

C

, COLLECTOR CURRENT (mA)  

Fig.5 h

FE

–Ic  

Fig.6  

V

BEsat

—— I

C  

1000  

100  

10  

1.6  

1.2  

Τ

=100

℃  

α

Τ

=25

℃  

α

Τ

α

=25

℃  

0.8  

0.4  

COMMON EMITTER  

CE

=1V  

β

=10  

V

0

0.1  

10  

100  

1000  

1

10  

100  

200 300  

1

I

C

, COLLECTOR CURRENT (mA)  

I

C

, COLLECTOR CURRENT (mA)  

Fig.8  

f

T

——I

C  

Fig.7  

I

C

—— V

BE  

1000  

100  

10  

1000  

100  

10  

COMMON EMITTER  

V

CE

=20V T

a

=25

℃

 

1

0.1  

1

10  

50  

80  

0

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

I

C

, COLLECTOR CURRENT (mA)  

BASE-EMMITER VOLTAGE V

BE

(V)  

REV 1.0 2021 JAN  

PAGE:3/3