GOODWORK-S9015

S901

5

 

General Purpose Transistor  

PNP

S

ilicon  

FEATURES  

• Complementary to S9015  

e

A

M

D

e

e

C

a

E

L

1  

L

H

E  

1.BASE  

2.EMITTER  

3.COLLECTOR  

SOT-23 mechanical

 

data  

A

C

D

E

H

E  

e

M

L

L

1  

a

UNIT  

Marking  

max  

1.1 0.15 1.4

 

3.0 2.6 0.5

 

1.95  

0.0  

0.55 0.36  

(ref) (ref)  

mm  

mil  

min

0.9 0.08

1.2

2.8 2.2 0.3 1.7  

0.15  

0.0  

6

Type number  

S9015  

Marking code  

M6  

max  

43  

6

3

55 118

 

102 20

 

77  

47 110 87

 

12 67  

22  

14  

(ref) (ref)  

min

35  

MAXIMUM RATINGS  

Rating  

Symbol  

Value  

-45  

Unit  

Vdc  

Collector–Emitter Voltage  

Collector–Base Voltage  

Emitter–Base Voltage  

Collector Current — Continuous  

V

CEO  

V

CBO  

-50  

Vdc  

V

EBO  

I

C  

-5.0  

-100  

Vdc  

mAdc  

THERMAL CHARACTERISTICS  

Characteristic  

Symbol  

Max  

Unit  

200  

mW  

T

o

tal Device Dissipation FR– 5 Board, (1)  

T

A

= 25°C  

P

D  

Junction and Storage

T

e

mperature  

°C  

T

J

,T

stg  

–

55 to +150  

CLASSIFICATION OF h

FE  

Rank  

L

H

Range  

200-450  

400-1000  

REV 1.0 2021 JAN  

PAGE:1/3  

S9015  

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  

OFF CHARACTERISTICS  

Characteristic  

Symbol  

Min  

Max  

Unit  

Collector–Emitter Breakdown Voltage(3)  

(

I

C

= -0.1 mAdc, I

B

= 0)  

V

(BR)CEO  

-45  

–

Vdc  

Collector–Base Breakdown Voltage  

V

(BR)CBO  

V

(BR)EBO  

-50  

–

–

Vdc  

Vdc  

(

I

C

= -100 µAdc, I

E

= 0)  

Emitter–Base Breakdown Voltage  

(

I

E

= -100 µAdc, I

C

= 0)  

-5.0  

Collector cut-off current  

I

CBO  

I

EBO  

–

–

-0.1  

-0.1  

uAdc  

uAdc  

(

V

CB

=-50 Vdc, I

E

= 0 )  

Emitter cut-off current  

(

V

EB

= -5Vdc, I

C

= 0 )  

1. FR–5 = 1.0 x 0.75 x 0.062 in.  

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  

3. Pulse

T

e

st: Pulse Width <300 µs, Duty Cycle <2.0%.  

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)  

ON CHARACTERISTICS (3)  

Characteristic  

Symbol  

Min  

Max  

Unit  

—

DC Current Gain  

h

FE  

(

I

C

=-1.0 mAdc, V

CE

=-5 Vdc)  

200  

—

1000  

-0.3  

Collector–Emitter Saturation Voltage  

V

CE(sat)  

V

BE(sat)  

V

dc  

V

dc  

(

I

C

= -100 mAdc, I

B

= -10 mAdc)(3)  

Base–Emitter Saturation Voltage(3)  

(

I

C

= -100 mAdc, I

B

= -10mAdc)  

—

-1.0  

SMALL–SIGNAL CHARACTERISTICS  

Current–Gain — Bandwidth Product  

(

I

C

= -10mAdc, V

CE

= -5.0Vdc, f =30MHz)  

–

f

T  

150  

MHz  

REV 1.0 2021 JAN  

PAGE:2/3  

RATIN

G

A

ND CHARACTERISTIC CURVES (S9015)  

Fig.1 Power

 

Derating Curve  

Fig.2 Static

 

characteristics  

-12  

-10  

-8  

250  

200  

Common Emitter  

T

a

=25

℃

 

150  

100  

50  

I

B

=-20uA  

-6  

I

B

=-14uA  

I

B

=-8uA  

-4  

-2  

I

B

=-2uA  

0.0  

0

25  

50  

75  

100  

125  

150  

175  

0.0  

-2.0  

-4.0  

-6.0  

-8.0  

-10  

Ambient

T

e

mperature (

°

C)  

Collector-Emitter Voltage V

CE

(V)  

Fig.4 Ic–V

BE  

Fig.3 h

FE

–Ic  

1000  

-100  

-10  

-1  

100  

10  

1

V

CE

=-5.0V  

T

a

=25

℃  

V

CE

=-5.0V  

-0.1  

-0.1  

-1.0  

-10  

-100  

-1000  

0

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

I

C

, COLLECTOR CURRENT (mA)  

Base-Emitter Voltages

 

V

BE

(V)  

Fig.5 V

BEsat

–Ic  

Fig.6 V

CEsat

–Ic  

-2.0  

-1.0  

-1.0  

-0.1  

TA=25

℃

 

β

=10  

TA=25

℃  

β

=10  

-0.1  

-0.01  

-0.1  

-1.0  

-10  

-100  

-1000  

-0.1  

-1.0  

-10  

-100  

-1000  

I

C

, COLLECTOR CURRENT (mA)  

I

C

, COLLECTOR CURRENT (mA)  

Fig.8 C

ob

/C

ib

–

V

CB

/V

EB  

Fig.7 f

t

–Ic  

100  

1000  

Cib  

10  

100  

10  

f=1MHz  

T

A

=25

℃  

I

E

=0/I

C

=0  

Cob  

V

CE

=-5.0V  

T

a

=25

℃

 

1.0  

-0.1  

-1.0  

-10  

-100  

-0.1  

-10  

Reverse Voltage

 

V

R

(V)  

-100  

I

C

, COLLECTOR CURRENT (mA)  

REV 1.0 2021 JAN  

PAGE:3/3