GOSEMICON-GBS60037TOB
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GOSEMICON
GBS60037
REV P2
N-channel 600V 29m
Ω
(Typ) Power MOSFET
1 FEATURES
2 APPLICATIONS
•
•
•
•
600V break down voltage
Ultra-low R
DS-ON
& FOM
Ultra-fast body diode
Fast switching on/off
•
•
•
•
Server power
Telecom power
EV charger
Motor driver
D(2)
3 ORDERING
INFORMATION
TYPE
MARKING
PACKAGE
G(1)
GBS60037TOB
60037
TO-247
TO-247
S(3)
4 DISCRIPTION
The 600V high voltage Super Junction MOSFET achieves ultra-low ON-resistance and gate charge.
Thanks to excellent balance between switching performance and conduction performance, the
GBS60037 provides very high efficiency in resonant switch topology.
The Ultra-fast recovery body dio
d
e makes the GBS60037 suitable for high switching frequency
application and supports high power density application. The GBS60037 is available in TO-247 package.
5 KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
@ Tj_max
R
DS-ON
max @Vgs=10V
Q
g
(Typ)
VALUE
UNIT
650
34
V
mΩ
nC
A
136
235
18
I
D-pulse
Eoss@400V
µJ
ns
Body diode recovery time
155
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
1
GBS60037
6 SPECIFICATIONS
6.1 ABSOLUTE MAXIMUM RATINGS
T
J
=25°C
operating free-air temperature unless otherwise noted
SYMBOL PARAMETER
TEST CONDITION
VALUE
UNIT
V
DS
I
D
Drain-source voltage
600
58
V
Tc=25
°C
A
Continuous drain current
Tc=100
°C
36
A
V
I
D-pulse
V
GS
E
AS
Pulsed drain current
235
Gate-source voltage
±
30
340
mJ
mJ
A
Single pulsed avalanche energy
Repetitive avalanche energy
Single pulsed avalanche current
Power dissipation
I
D
=8A, V
DD
=50V
I
D
=8A, V
DD
=50V
E
AR
1.7
I
AS
8
W
P
D
227
V/ns
A
dv/dt
I
S
MOSFET dv/dt ruggedness
Continuous diode forward current
Diode pulsed current
V
DS
=0~400V
60
58
A
I
S-pulse
dv/dt
T
j
235
V/ns
°C
°C
Reverse diode dv/dt
V
DS
=0~400V, I
SD
<25A
50
Operating junction temperature
Storage temperature
-55 ~ 150
-55 ~ 150
T
stg
6.2 THERMAL INFORMATION
SYMBOL
PARAMETER
VALUE
UNIT
R
θJC max.
R
θJ
A max.
T
sold
Max. Thermal resistance, junction – case
Max. Thermal resistance, junction – ambient
Soldering temperature
0.54
62
°C/W
°C/W
°C
260
6.3 ELECTRICAL CHARACTERISTICS
T
J
=25°C
operating free-air temperature unless otherwise noted
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
STATIC CHARACTERISTICS
V
(BR)DSS
V
GS
=0V, I
D
=10mA
600
V
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
2
GBS60037
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
Drain-source breakdown
voltage
V
GS
=0V, I
D
=10mA,
Tj=150
℃
650
3.4
V
(GS)th
Gate threshold voltage
V
DS
=V
GS
, I
D
=1mA
V
GS
=10V, I
D
=25A
V
GS
=10V, I
D
=25A,
Tj=125
℃
4
4.6
34
V
29
Drain-source on state
resistance
R
DS-ON
mΩ
60
Gate-source leakage
current
I
GSS
V
GS
=30V, V
DS
=0V
100
5
nA
uA
V
GS
=0V, V
DS
=600V
V
GS
=0V, V
DS
=600V,
Tj=125
℃
Drain-source leakage
current
I
DSS
500
DYNAMIC CHARACTERISTICS
C
iss
Input capacitance
Output capacitance
Reverse transfer
capacitance
6300
110
pF
pF
V
GS
=0V
C
oss
V
DS
=400V, f=250KHz
C
rss
9
pF
Effective output
capacitance,
C
o
(er)
225
pF
energy related
Effective output
capacitance,
V
GS
= 0V, V
DS
= 0V~400V
C
o
(tr)
2435
pF
time related
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
50
6
ns
ns
ns
ns
V
GS
=14V, V
DS
=400V,
R
G
=3Ω
Turn-off delay time
Fall time
140
7
GATE CHARGE CHARACTERISTICS
Q
g
Gate charge total
136
54
nC
nC
nC
V
Q
gd
Gate to drain charge
Gate to source charge
Gate plateau voltage
V
DS
=400V, I
D
=25A
V
GS
=0~10V
Q
gs
38
V
plateau
6.2
BODY DIODE CHARACTERISTICS
V
SD
Diode forward voltage
V
GS
=0V, I
F
=25A, T
j
=25°C
1.3
V
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
3
GBS60037
7 Electrical
Characteristic Diagram
SOA (Ta=25
℃
, D=0)
IDS=10mA
1000
100
10
780
760
740
720
700
680
660
640
620
600
1µs
10µs
100µs
1ms
10ms
1
0.1
1
10
100
1000
-50
0
50
Tj [℃]
100
150
Drain voltage (V
)
Figure 2. Safety Operating Area
Figure 1. Drain-source Breakdown Voltage
ID vs. VGS
(VDS=20V)
SOA (Ta=80
℃
, D=0)
300
250
200
150
100
50
1000
25
℃
100
10
1
1µs
10µs
100µs
1ms
150
℃
10ms
0
0.1
-50
1
10
100
1000
2
4
6
8
10
12
Drain voltage (V
)
Gate voltage (V)
Figure 3. Safety Operating Area(Ta=80
℃
)
Figure 4. Typ. Transfer Characteristics
ID vs. VDS
(Ta=25℃)
ID vs. VDS
(Ta=125℃)
200
180
160
140
120
100
80
300
Vgs=20V
Vgs=20V
250
200
150
100
50
Vgs=10V
Vgs=10V
Vgs=8V
Vgs=8V
Vgs=7V
Vgs=7V
Vgs=6V
60
Vgs=6V
40
20
0
0
0
5
10
15
20
0
5
10
15
20
Drain voltage (V)
Drain voltage (V)
Figure 5. Typ. Output Characteristics
Figure 6. Typ. Output Characteristics
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
5
GBS60037
VGS=10V
，
IDS=25A
RDS-
on vs. ID
(Ta=25℃)
140
120
100
80
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
60
40
20
-50
0
50
Tj [℃]
100
150
0
50
100
150
200
250
300
Drain current (A)
Figure 7. Typ. Drain Source On-state Resistance
Figure 8. RDS-ON vs. Tj
Qg vs. VGS
(Ta=25℃
, VDD=400V)
Cap vs. VDS
(Ta=25
℃
, f=250kHz)
14
100000
10000
1000
100
12
10
8
Ciss
Coss
Crss
6
4
10
2
1
0
0
100
200
300
400
0
40
80
120
160
Gate charge (nC)
Drain voltage (V)
Figure 9. Typ. Gate Charge
Figure 10. Typ. Capacitance
Eoss vs. VDS
(Ta=25
℃
)
IF vs. VSD
(Ta=
25℃)
20
100
10
1
18
16
14
12
10
8
125
℃
25
℃
6
4
2
0.1
0
0.3
0.6
0.9
1.2
0
50 100
150 200 250 300 350 400 450
Drain voltage
（
V
）
Body diode forward voltage (V)
Figure 11. Typ. Coss Stored Energy
Figure 12. Body diode forward characteristics
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
6
GBS60037
VGS(th) vs. Tj (ID=1mA)
ID vs. Tc
70
60
50
40
30
20
10
0
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
-50
0
50
100
150
0
40
80
120
160
Tj [℃]
Case Temperature (
℃
)
Figure 13. Threshold Voltage vs. Tj
Figure 14. Maximum Drain current vs. Tj
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
7
GBS60037
8 Test
Circuit
V
(BR)DS
ID
VDS
I
D
Rg
Waveform 1.
Unclamped inductive switching
waveform
Figure 15. Unclamped inductive
switching test circuit
VDS
Rg1
dv/dt
VDS
dI
F
/dt
t
rr
Rg2
IF
Qrr
dI
rr
/dt
Figure 16. Body diode characteristics test
circuit
Waveform 2. Body diode characteristics waveform
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
8
GBS60037
PACKAGE INFORMATION
mm
NOM
5.00
2.41
2.00
1.21
2.01
3.01
0.61
21.00
16.55
15.80
13.30
5.00
SYMBOL
MIN
4.80
2.21
1.85
1.11
1.91
2.91
0.51
20.70
16.25
15.50
13.00
4.80
2.30
MAX
5.20
2.59
2.15
1.36
2.21
3.21
0.75
21.30
16.85
16.10
13.60
5.20
A
A1
A2
b
b2
b4
c
D
D1
E
E1
E2
E3
e
2.50
2.70
5.44BSC
19.92
–
3.60
–
L
19.62
20.22
4.30
3.80
7.30
L1
Φ
P
Φ
P1
S
–
3.40
–
6.15BSC
©2021
GOSEMICON Co., Ltd.
All Rights Reserved
10
