Guangdong-Hottech-2SA1661-DY
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KTA1661
BIPOLAR TRANSISTOR (PNP)
FE
A
T
URES
Complementary to KTC4373
High Transition Frequency
High Current Application
High Voltage
Surface Mount device
SOT-89
MECHANICAL DATA
Case: SOT-89
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.055 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-120
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-120
-5
V
V
Collector Current
-800
-160
500
mA
mA
mW
°C/W
°C
Base Current
I
B
Collector Power Dissipation
P
C
R
θJA
T
J
Thermal Resistance From Junction To Ambient
Junction Temperature
250
150
Storage Temperature
T
STG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min
Typ Max Unit
Conditions
I
C
=-1mA
，
I
E
=0
I =-10mA
I =0
V
(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
-120
-120
-5
V
V
V
(BR)CEO
V
(BR)EBO
I
CBO
，
C
B
V
I
E
=-1mA
，
I
C
=0
-0.1
-0.1
240
-1
µA V
CB
=-120V, I
E
=0
Emitter cut-off current
V
EB
=-5V, I
C
=0
I
EBO
µA
DC current gain
h
FE
80
V
CE
=-5V, I
C
=-100mA
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
V
V
I
C
=-500mA
，
I
B
=-50mA
V
CE
=-5V
,
I
C
=-500mA
V
CE
=-5V
,
I
C
=-0.1A
-1
Transition frequency
f
T
120
MHz
pF
V
CB
=-10V, I
E
=0, f=1
Collector output
capacitance
C
ob
30
MHz
CLASSIFICATION OF
h
FE
Rank
O
Y
Range
80-160
DO
120-240
DY
Marking
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
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KTA1661
BIPOLAR TRANSISTOR (PNP)
Typical Characteristics
h
FE
– I
C
I
C
– V
CE
1k
-800
COMMON EMITTER
=-5V
COMMON EMITTER
Ta=25 C
V
500
300
CE
-5mA
-4mA
-3mA
-2mA
-600
-400
-200
0
Ta=100 C
Ta=25 C
100
Ta=-25 C
50
30
I
=-1mA
B
0mA
-8
10
-3
-10
-30
-100
-300
-1k
-4
-12
-16
-20
(V)
0
COLLECTOR-EMITTER VOLTAGE V
CE
COLLECTOR CURRENT I
(mA)
C
I
C
– V
BE
V
CE(sat)
– I
C
-0.5
-0.3
-1.0
COMMON EMITTER
COMMON EMITTER
/I =10
V
=-5V
CE
I
C
B
-0.8
-0.6
-0.1
-0.4
-0.2
-0.05
-0.02
0
-3
-10
-30
-100
-300
-1k
0
-0.2
-0.4
-0.6
-0.8
-1.0
(V)
-1.2
BASE-EMITTER VOLTAGE V
COLLECTOR CURRENT I
(mA)
BE
C
Pc – Ta
SAFE OPERATING AREA
1.2
1.0
-3k
-1k
I
I
MAX(PULSE)
C
C
1 MOUNTED
ON CERAMIC
1
2
SUBSTRATE(250mm
2
x0.8t)
2 Ta=25 C
MAX
(CONTINUOUS)
-300
-100
-30
0.8
0.6
0.4
0.2
0
SINGLE NONREPETITIVE
PULSE Ta=25
C
-10
-3
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
-1
-0.3
0
20
40
60
80 100 120
140 160
-1
-3
-10
-30
-100
-300
AMBIENT TEMPERATURE Ta (
C)
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
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KTA1661
BIPOLAR TRANSISTOR (PNP)
SOT-89 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
1.400
0.320
0.400
0.350
4.400
Max.
1.600
0.520
0.580
0.440
4.600
Min.
0.055
0.013
0.016
0.014
0.173
Max.
0.063
0.020
0.023
0.017
0.181
A
b
b1
c
D
D1
E
1.550REF
0.061REF
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
E1
e
1.500TYP
3.000TYP
0.060TYP
0.118TYP
e1
L
0.900
1.200
0.035
0.047
SOT-89 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
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KTA1661
BIPOLAR TRANSISTOR (PNP)
SOT-89 Tape
and Reel
SOT-89 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-89
4.85
±0.1
4.45
±0.1
1.85
±0.1
Ø1.50
±0.1
1.75
±0.1
5.50
±0.1
4.00
±0.1
8.00
±0.1
2.00
±0.1
12.00
±0.1
TOLERANCE
SOT-89 Tape Leader and Trailer
SOT-89 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
13.20
±1
16.50
±1
TOLERANCE
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
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