Guangdong-Hottech-2SB1260-ZL-180-390
| Part # | Guangdong-Hottech-2SB1260-ZL-180-390 |
Download  | Guangdong-Hottech-2SB1260-ZL-180-390 |
Plastic-Encapsulate Transistors
FEATURES
2SB1260
(PNP)
•
High breakdown voltage and high current. BVCEO=-80
V
,
IC=-1A
•
Good hFEVLinearity.
•
Low VCE(sat).
•
Complements the 2SD1898.
Marking: ZL
Maximum Ratings (
Ta=25
unless otherwise noted)
1. BASE
Parameter
Symbol
V
a
lue
Unit
V
2. COLLECTO
3. EMITTER
SOT-89
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction
T
e
mperature
Storage
T
e
mperature
-80
-80
CBO
V
V
CEO
V
-5
V
EBO
I
-1
A
C
P
C
500
mW
T
J
150
T
stg
-55to +150
ELECTRICAL CHARACTERISTICS
( @ Ta=25
unless otherwise specified)
Test conditions
Typ
Parameter
Symbol
Min
-80
Max
Unit
V
V
CBO
I
C
=-
50μA
I
E
=0
I
C
=-1mA I
B
=0
I
E
=-
50μA
I
C
=0
V
CB
=-60V I
E
=0
V
EB
=-4
V
,
I
C
=0
Collector-base
breakdown voltage
breakdown voltage
breakdown voltage
V
CEO
V
EBO
I
CBO
Collector-emitter
Emitter-base
-80
-5
V
V
Collector cut-off
current
Emitter cut-off current
DC current
gain
-1
μA
μA
I
EBO
-1
h
FE
mA
V
CE
=-3V I
C
=-
100
82
390
-0.4
V
CE(sat)
I
C
=-500mA I
B
=-50mA
Collector-emitter
saturation voltage
V
V
CE
=-5
V
,
I
C
=-50mA,
f
T
Transition frequency
Output Capacitance
100
25
MHz
pF
C
obo
V
CB
=-10V f=1.0MHz I
E
=0
–
Page:P2-P1
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Transistors
2SB1260
Typical Characteristics
Page:P2-P2
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
