Guangdong-Hottech-2SC4672-DKQ-120-270-HL

Plastic-Encapsulate Transistors  

FEATURES  

2SC4672

(NPN)  

•

Low saturation voltage, typically VCE (sat) =0.1V at  

IC/IB =1A /50mA.  

•

Excellent DC current gain characteristics.  

•

Complements the 2SA1797.  

Maximum Ratings (

Ta=25  

Parameter  

unless otherwise noted)  

Symbol  

V

a

lue  

Unit  

V

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

60  

50  

6

CBO  

1. BASE  

V

V

CEO  

2. COLLECTO  

3. EMITTER  

SOT-89  

V

V

EBO  

I

Collector Current -Continuous  

2

A

C

P

C

Collector Power dissipation  

Storage

T

e

mperature  

W

0.5  

-55to +150  

T

stg  

ELECTRICAL CHARACTERISTICS

( @ Ta=25  

unless otherwise specified)  

Test conditions  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

CBO  

Min  

60  

50  

6

Typ  

Max  

Unit  

V

I

C

=

50

μA,I

E

=0  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

I

C

=

1

mA,I

B

=0  

V

I

E

=

50

μA,I

C

=0  

V

V

CB

=

60

V,I

E

=0  

0.1  

0.1  

μA  

μA  

I

EBO  

V

EB

=

5

V,I

C

=0  

Emitter cut-off current  

h

FE  

V

CE

=

2

V,I

C

=

0.5

A  

I

C

=

1

A,I

B

=

50

mA  

V

CE

=

2

V,I

C

=

500

mA,f=

100

MHz  

V

CB

=

10

V,I

E

=0,f=

1

MHz  

82  

270  

0.35  

DC current gain  

V

CE(sat)  

V

MHz  

pF  

Collector-emitter saturation voltage  

Transition frequency  

f

T  

210  

25  

C

ob  

Collector output capacitance  

CLASSIFIC

A

T

ION OF h

FE  

Rank  

P

Q

Range  

Marking  

80-180  

KDP  

120-270  

DKQ  

Page:P2-P1  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Transistors  

2SC4672

Typical Characteristics  

Page:P2-P2  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD