Guangdong-Hottech-2SK3018
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2SK3018
MOSFET (N-CHANNEL)
FE
A
T
URES
Low on-resistance
Very fast switching
Low voltage drive makes this device ideal for Portable equipment
For Battery management and High speed switch
and Low power DC to DC converter applications
Sub-miniature surface mount package
SOT-23 (Marking:KN
)
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Drain-source voltage
Symbol
V
DS
Value
30
Unit
V
Gate-source voltage
V
GS
±20V
0.1
V
Continuous drain current
Power dissipation
I
D
A
P
D
0.35
W
Thermal resistance from Junction to ambient
Junction and Storage temperature
R
θJA
T
J,
T
STG
357
°C/W
°C
-55 ~+150
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
Off Characteristics
V
(BR)DSS
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage (note 1)
V
GS
=0V, I
D
=10μA
30
0.8
20
V
µ
A
µA
V
V
DS
=30V,
V
DS
=0V,
I
DSS
0.2
±2
1.5
8
V
GS
=0V
I
GSS
V
GS
=±20V
V
GS(th)
V
DS
=3
V
,
I
D
=100μA
Ω
V
GS
=4V, I
D
=10mA
Drain-source on-resistance (note 1)
R
DS(ON)
g
FS
Ω
V
GS
=2.5V, I
D
=1mA
13
Forward transconductance (note 1)
Dynamic Characteristics
Input capacitance
V
DS
=3V, I
D
=10mA
mS
C
iss
C
oss
C
rss
13
9
pF
pF
pF
V
DS
=5V, V
GS
=0V, f=1MHz
Output capacitance
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time
4
t
d(on)
t
r
t
d(off)
t
f
15
35
80
80
nS
nS
nS
nS
Turn-on rise time
V
DD
=5V,V
GS
=5V,I
D
=10mA,
R
g
=10Ω,R
L
=500Ω
Turn-off delay time
Turn-off fall time
Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .
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2SK3018
MOSFET (N-CHANNEL)
Typical Characteristics
Output Characteristics
Transfer Characteristics
0.20
0.15
0.10
0.05
0.00
200
100
4.0V
3.5V
V
GS
=3.0V
T
a
=25
℃
Pulsed
30
10
V
GS
=2.5V
3
1
V
GS
=2.0V
V
GS
=1.5V
V
DS
=3V
T
a
=25
℃
Pulsed
0.3
0.1
0
1
2
3
4
5
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
I
D
R
DS(ON)
——
V
GS
——
60
40
20
0
15
10
5
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
I
D
=100mA
V
GS
=2.5V
I
D
=50mA
V
GS
=4V
30
0
3
1
10
100
0
5
10
15
20
200
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
I
S
——
V
SD
200
100
V
GS
=0V
T
a
=25
℃
Pulsed
30
10
3
1
0.3
0.1
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
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2SK3018
MOSFET (N-CHANNEL)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
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2SK3018
MOSFET (N-CHANNEL)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
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