Guangdong-Hottech-8205A
| Part # | Guangdong-Hottech-8205A |
Download  | Guangdong-Hottech-8205A |
Plastic-Encapsulate Mosfets
N-Channel
Enhancement Mode Power MOSFET
8205A
Description
The 8205A uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
●
V
DS
= 19.5
V
,
I
D
= 6A
R
DS(ON)
< 37m
Ω
@ V
GS
=2.5V
R
DS(ON)
< 27m
Ω
@ V
GS
=4.5V
TSSOP-8 top view
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
D1
D2
G1
G2
Application
●
Battery protection
●
Load switch
S1
S2
●
Power management
pin Assignment
Schematic diagram
Absolute Maximum Ratings (TA=25
℃
unless otherwise noted)
Parameter Symbol
Limit
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
19.5
±10
6
V
DS
V
GS
I
D
V
A
Drain Current-Pulsed (Note 1)
25
A
I
DM
Maximum Power Dissipation
1.5
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θ
JA
83
℃
/W
Electrical Characteristics (TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250
μ
A
19.5
21
V
V
DS
=19.5V,V
GS
=0V
1
μ
A
Page:P5-P1
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
8205A
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
I
GSS
V
GS
=±10V,V
DS
=0V
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=250
μ
A
V
GS
=4.5V, I
D
=4.5A
V
GS
=2.5V, I
D
=3.5A
V
DS
=5V,I
D
=4.5A
0.5
0.7
21
27
10
1.2
27
37
V
m
Ω
m
Ω
S
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
C
lss
C
oss
C
rss
600
330
140
PF
PF
PF
V
DS
=8V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
10
11
35
30
10
2.3
1.5
20
25
70
60
15
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=10V,I
D
=1A
V
GS
=4.5V,R
GEN
=6
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
V
DS
=10V,I
D
=6A,
GS
=4.5V
Gate-Source Charge
V
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
V
SD
I
S
V
GS
=0V,I
S
=1.7A
0.75
1.2
1.7
V
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Page:P5-P2
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
8205A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
t
on
t
r
t
off
t
f
t
d(on)
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
V
OUT
INVERTED
Rgen
10%
G
10%
50%
90%
50%
S
V
IN
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
Page:P5-P3
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
8205A
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page:P5-P4
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
8205A
Vds Drain-Source Voltage (V)
Figure 13
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page:P5-P5
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
