Guangdong-Hottech-9926A
| Part # | Guangdong-Hottech-9926A |
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Plastic-Encapsulate Mosfets
Dual N-Channel Enhancement Mode Field Effect Transistor
9926A
Features
V
DS
(V) = 20V
I
D
= 7A
R
DS(ON)
< 26m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 33m
Ω
(V
GS
= 2.5V)
R
DS(ON)
< 42m
Ω
(V
GS
= 1.8V)
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
SOP-8 top view
D1
S1
D2
S2
G1
G2
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
V
V
V
DS
Drain-Source Voltage
Gate-Source Voltage
20
V
GS
±8
T
A
=25°C
T
A
=70°C
7
6
40
Continuous Drain
Current
A
A
I
D
I
DM
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
2
P
D
W
Power Dissipation
1.44
-55 to 150
T
J
, T
STG
Junction and Storage Temperature Range
°C
Thermal Characteristics
Parameter
Symbol
Typ
48
74
Max
62.5
110
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
R
θ
JL
35
Page:P4-P1
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
9926A
Electrical Characteristics (T =25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250
µ
A, V
GS
=0V
20
V
V
DS
=16V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250
µ
A
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=7A
100
0.8
nA
V
A
0.3
30
0.5
21.6
29.2
26.4
33.3
22
26
36
33
42
m
Ω
T
J
=125°C
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
m
Ω
S
V
A
V
GS
=2.5V, I
D
=5A
V
GS
=1.8V, I
D
=4A
DS
=5V, I
D
=5A
I
S
=1A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
0.76
1
3
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
1050
163
129
4
pF
pF
pF
Ω
V
GS
=0V, V
DS
=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=7A
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
15.2
1
4
6.5
9
56.5
13.2
21
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
GS
=5V, V
DS
=10V, R
L
=1.5
Ω
,
R
GEN
=3
Ω
t
D(off)
t
f
Turn-Off DelayTime
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery time
I
F
=5A, dI/dt=100A/
µ
s
Q
rr
Body Diode Reverse Recovery charge
I
F
=5A, dI/dt=100A/
µ
s
7.1
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The value
in any a given application depends on the user’s specific board design. The current rating is based on the
t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The
R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The SOA
curve provides a single pulse rating.
Page:P4-P2
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
9926A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
20
16
12
8
2.5V
4.5V
2V
V
DS
=5V
V
GS
=1.5V
125°C
25°C
4
0
0
0
1
2
3
DS
(Volts)
4
5
0.4
0.8
1.2
1.6
2
2.4
V
GS(Volts)
V
Figure 2: Transfer Characteristics
Fig 1: On-Region Characteristics
45
40
35
30
25
20
15
10
1.8
1.6
1.4
1.2
1
I
D
=7A
V
GS
=1.8V
V
GS
=2.5V
V
GS
=4.5V
V
GS
=2.5V
V
GS
=1.8V
V
GS
=4.5V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
50
40
30
20
10
125°C
I
D
=7A
125°C
25°C
25°C
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Page:P4-P3
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
9926A
1800
5
4
3
2
1
0
V
DS
=15V
I
D
=7A
1600
1400
1200
1000
800
600
400
200
0
C
iss
C
oss
C
rss
0
4
8
12
16
20
0
5
10
15
20
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
40
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
10
µ
s
100
µ
s
30
20
10
0
10ms
0.1s
T
J(Max)
=150°C
T
A
=25°C
10
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
100
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
θ
JA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
R
P
D
0.1
T
on
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Page:P4-P4
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
