Guangdong-Hottech-AO4407
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AO4407
P-CHANNEL ENHANCEMENT MODE MOSFET
FE
A
T
URES
Advanced trench process technology
High density cell design for ultra low on-resistance
Lead free product is acquired
V
DS:
-30V Max.,I
D:
-12A Max.
R
DS(ON)
≤13mΩ@V
GS
=-20V
R
DS(ON)
≤14mΩ@V
GS
=-10V
R
DS(ON)
≤30mΩ@V
GS
=-5V
SOP-8
MECHANICAL DATA
Case: SOP-8
Case material: Molded plastic. UL flammability
Classification rating: 94V-0
Weight: 0.3 grams (approximate)
MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-source voltage
Symbol
1
0
S
ec
Steady state
Unit
V
DS
V
GS
-30
V
V
Gate-source voltage
±25
T
A
=25°C
T
A
=70°C
-12
-10
-9.2
-7.4
I
D
Continuous drain current
Pulsed drain current
(note 1)
A
I
DM
I
AR
-60
26
Avalanche current
(note 1)
Repetitive avalanche energy L=0.3Mh
(note 1)
E
AR
101
mJ
W
T
A
=25°C
Power dissipation
(note 2)
T
A
=70°C
3.1
2.0
1.7
1.1
P
D
Junction and storage temperature range
T
J
, T
STG
R
θJA
-55 to 150
°C
Typ.:32
Max.:40
Typ.:60
Max.:75
Maximum junction-to-ambient
(note 3)
°C/W
Typ.:17
Max.:24
Maximum junction-to-lead
(note 3,4)
R
θJL
Note:
1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to
keep initial T
J
=25°C.
2. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
3. The value of R
qJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user’s specific board design.
4.The R
qJA
is the sum of the thermal impedance from junction to lead R
qJL
and lead to ambient.
5.The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
6.These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
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AO4407
P-CHANNEL ENHANCEMENT MODE MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Symbol Min
Typ Max
Unit
Conditions
Drain-source breakdown voltage
V
DSS
-30
V
I
D
=-250μA,V
GS
=0V
V
DS
=-30V,V
GS
= 0V
V
DS
=-30V,V
GS
=0V,T
J
=55°C
V
DS
=0V,V
GS
=±25V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V,V
DS
=-5V
V
GS
=-20V,I
D
=-12A
V
GS
=-10V,I
D
=-12A
-1
-5
±100
Zero gate voltage drain current
I
DSS
μA
Gate-body leakage current
Gate threshold voltage
On state drain current
I
GSS
V
GS(t
I
D(ON)
nA
V
A
-1.7 -2.25 -2.8
-60
8.5
10
13
14
19
30
Static drain-source on-resistance
R
DS(ON)
mΩ
12
19
V
GS
=-10V,I
D
=-12A,T
J
=125°C
V
GS
=-5V,I
D
=-7A
Forward transconductance
Diode forward voltage
Maximum body-diode continuous
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Total gate charge
Gate source charge
Gate drain charge
Turn-on delaytime
Turn-on rise time
g
FS
V
SD
I
S
Ciss
Coss
Crss
Rg
27
-0.72
S
V
A
V
DS
=-5V,I
D
=-10.5A
I
S
=-1A,V
GS
=0V
-1
-4
2060 2600
370
295
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
V
GS
=0V,V
DS
=-15V,f=1MHz
V
GS
=0V,V
DS
=0V,f=1MHz
1.2
24
2.4
30
4.6
10
11
9.4
24
12
30
3.6
39
Qg
V
GS
=-10V,V
DS
=-15V,
I
D
=-12A
Qgs
Qgd
t
D(on)
tr
t
D(off)
t
f
V
GS
=-10V, V
DS
=-15V,
R
L
=1.25Ω,
R
GEN
=3Ω
Turn-off delaytime
Turn-off fall time
Body diode reverse recovery time
t
rr
40
I
F
=-12A, dI/dt=100A/μs
Body diode reverse recovery
charge
Qrr
22
nC
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AO4407
P-CHANNEL ENHANCEMENT MODE MOSFET
TYPICAL CHARACTERISTICS
80
80
60
40
20
0
-10V
V
DS
=-5V
-6V
-5V
60
40
20
0
-4.5V
125
°
C
-4V
V
GS
=-3.5V
4
25
°
C
1
2
3
4
5
6
0
1
2
3
5
V
GS
(Volts)
Figure 2: Transfe
r
C
haracteristic
s
(
Not
e
5
)
-V
DS
(Volts)
Fig 1: On-Regio
n
C
haracteristic
s
(
Not
e
5
)
30
1.6
1.4
1.2
1
25
20
15
10
5
V
GS
=-10V
I
D
=-12A
V
GS
=-5V
V
GS
=-5V
V
GS
=-10V
I
D
=-7A
0
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
(
N
o
t
e
5
)
Figure 4: On-Resistance vs. Junction Temperature
(Note 5)
30
25
20
15
10
5
1.0E+01
I
D
=-12A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
125
°
C
25
°
C
25
°
C
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6:
Body-Diode Characteristic
s
(
Not
e
5
)
0.6
0.8
1.0
1.2
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO4407
P-CHANNEL ENHANCEMENT MODE MOSFET
3000
2500
2000
1500
1000
500
10
V
DS
=-15V
I
D
=-12A
8
6
4
2
0
C
iss
C
oss
C
rss
0
0
5
10
15
Q
g
(nC)
20
25
30
0
5
10
15
20
25
30
-V
DS
(Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
1000.0
100.0
10.0
1.0
10000
1000
100
10
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
10s
T
J(Max)
=150
°
C
T
A
=25
°
C
0.1
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note 6)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note 6)
10
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θ
JA
=75
°
C/W
0.1
P
D
0.01
0.001
Single Pulse
0.001
T
on
T
0.00001
0.0001
0.01
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note 6)
0.1
1
10
100
1000
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AO4407
P-CHANNEL ENHANCEMENT MODE MOSFET
SOP-8 Package
Outline Dimensions
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min.
Max.
1.750
0.250
1.550
0.510
0.250
5.000
Min.
Max.
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.800
0.053
0.004
0.053
0.013
0.007
0.189
0.069
0.010
0.061
0.020
0.010
0.197
c
D
e
1.270(BSC)
0.050
（
BSC
）
E
5.800
3.800
0.400
0
°
6.200
4.000
1.270
8
°
0.228
0.150
0.016
0
°
0.244
0.157
0.050
8
°
E1
L
θ
SOP-8 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
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AO4407
P-CHANNEL ENHANCEMENT MODE MOSFET
SOP-8 Tape
and Reel
SOP-8 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOP-8
6.40
±0.1
5.40
±0.1
2.10
±0.1
Ø1.50
±0.1
1.75
±0.1
5.50
±0.1
4.00
±0.1
8.00
±0.1
2.00
±0.1
12.00
±0.1
TOLERANCE
SOP-8 Tape Leader and Trailer
SOP-8 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
13’’ DIA
D
D1
D2
13.00
±1
G
R151.00
±1
H
R56.00
±1
I
W1
W2
Ø330.00 100.00
±2 ±1
R6.50
±1
12.40
±1
17.60
±1
TOLERANCE
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