Guangdong-Hottech-APM4953
| Part # | Guangdong-Hottech-APM4953 |
Download  | Guangdong-Hottech-APM4953 |
Plastic-Encapsulate Mosfets
P-Channel
Enhancement Mode Power MOSFET
Description
4953
The 4953 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
General Features
●
V
DS
= -30
V
,
I
D
= -5.1A
R
DS(ON)
< 105m
Ω
@ V
GS
=-4.5V
R
DS(ON)
< 55m
Ω
@ V
GS
=-10V
SOP-8 top view
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
D1
D2
G1
G2
Application
●
PWM applications
S1
S2
Schematic diagram
●
Load switch
pin assignment
●
Power management
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Limit
-30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
DS
±20
V
V
GS
-4.9
A
I
D
Drain Current-Pulsed
(Note 1)
-20
A
I
DM
Maximum Power Dissipation
2
W
℃
P
D
Operating Junction and Storage Temperature Range
-55
T
o
1
50
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θ
JA
50
℃
/W
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
-30
-33
V
V
DS
=-24V,V
GS
=0V
-1
μ
A
Page:P5-P1
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
4953
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
I
GSS
V
GS
=±20V,V
DS
=0V
±100
nA
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-10V, I
D
=-5.1A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=-15V,I
D
=-4.5A
-1
4
-1.6
48
73
7
-3
55
V
m
Ω
m
Ω
S
Drain-Source On-State Resistance
105
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
520
130
70
PF
PF
PF
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
t
d(on)
t
r
t
d(off)
t
f
7
13
14
9
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD
=-15V, ID=-1A,
V
GS
=-10V,R
GEN
=6
Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Q
g
Q
gs
Q
gd
12
2.2
3
V
DS
=-15V,I
D
=-5.1A,V
GS
=-10V
V
GS
=0V,I
S
=-1.7A
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Page:P5-P2
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
4953
Typical Electrical and Thermal Characteristics
t
on
t
r
t
off
t
f
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
10%
50%
90%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Page:P5-P3
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
4953
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page:P5-P4
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Mosfets
4953
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page:P5-P5
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
