Guangdong-Hottech-BC807-25
| Part # | Guangdong-Hottech-BC807-25 |
Download  | Guangdong-Hottech-BC807-25 |
Plastic-Encapsulate Transistors
FEATURES
(PNP)
BC807-16
Ldeally suited for automatic insertion
epitaxial planar die construction
complementary NPN type available(BC817)
BC807-25
(PNP)
(PNP)
BC807-40
Marking
BC807-16 BC807-25 BC807-40
5A
5B
5C
MAXIMUM R
A
T
INGS (TA=25
unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
Unit
V
-50
-45
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
1. BASE
-5
V
2. EMITTER
SOT-23
-500
mA
mW
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
3. COLLECTO
P
C
300
T
J
150
T
-55 to +150
417
Storage
T
e
mperature
stg
Thermal Resistance Junction to Ambient
R
θJA
℃/W
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
unless otherwise specified)
Symbol
Test conditions
Min
Max
-0.1
Unit
V
VCBO
Collector-base breakdown voltage
IC= -10
μ
A, IE=0
-50
VCEO
VEBO
ICBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -10mA, IB=0
IE= -1
μ
A, IC=0
-45
-5
V
V
VCB= -45
V
,
I
E=0
VCE= -40
V
,
I
B=0
u A
ICEO
IEBO
Collector cut-off current
Emitter cut-off current
-0.2
-0.1
u A
u A
VEB= -4
V
,
IC=0
DC current gain
807-16
807-25
807-40
100
160
250
250
400
600
hFE
VCE= -1
V
,
I
C= -100mA
VCE(sat)
Collector-emitter saturation voltage
IC=-500mA, IB= -50mA
IC= -500mA, IB= -50mA
-0.7
-1.2
V
VBE(sat)
fT
Base-emitter saturation voltage
Transition frequency
V
VCE= -5
V
,
I
C= -10mA
f=100MHz
100
MHz
IE = 0; VCB = -10 V
f = 1 MHz
collector capacitance
Cc
9
PF
Page:P2-P1
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
Plastic-Encapsulate Transistors
BC807-16
BC807-25
Typical Characteristics
BC807-40
Page:P2-P2
GUANGDONG HOTTECH INDUSTRIAL CO.,
LTD
