Guangdong-Hottech-BC817-40

Part #Guangdong-Hottech-BC817-40
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Guangdong-Hottech-BC817-40
BC817  
BIPOLAR TRANSISTOR (NPN)  
FE
A
T
URES  
Complementary to BC807  
High Collector Current  
Low Collector-emitter saturation voltage  
High current gain  
Surface Mount device  
SOT-23  
MECHANICAL DATA  
Case: SOT-23  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS
 
(T

A

= 25°C unless otherwise noted)  
Parameter  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I
C  
Value  
Unit  
V
Collector-Base Voltage  
50  
45  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
5
V
Collector Current  
Collector Power Dissipation  
500  
mA  
mW  
°C/W  
°C  
P
C  
300  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
R

θJA  

T
J  
417  
150  
Storage Temperature  
T
STG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
I

C

=10uA
,
I

E

=0  
V
(BR)CBO  
V
(BR)CEO  
V
(BR)EBO  
I

CBO  

Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
50  
45  
5
V
V
I

C

=10mA
,
I

B

=0  
I

E

=1uA
,
I

C

=0  
V

CB

=45V, I

E

=0  
V

EB

=4V, I

C

=0  
V
0.1  
0.1  
600  
uA  
uA  
Emitter cut-off current  
I

EBO  

h

FE1  

h

FE2  

100  
40  
V

CE

=1V, I

C

=100mA  
V

CE

=1V, I

C

=500mA  
I

C

=500mA
,
I

B

=50mA  
I

C

=500mA
,
I

B

=50mA  
V

CE

=1V
,
I

C

=500mA  
V

CE

=5V
,
I

C

=10mA,f=100  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
V

CE(sat)  

V

BE(sat)  

V

BE)  

0.7  
1.2  
1.2  
V
V
V
Transition frequency  
f

T  

100  
MHz  
pF  
MHz  
V

CE

=10V, f=1  
MHz  
Collector output
 
capacitance  
C

ob  

10  
CLASSIFICATION OF
 
h

FE  

Rank  
BC817-16  
100-250  
6A  
BC817-25  
160-400  
6B  
BC817-40  
250-600  
6C  
Range  
Marking  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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BC817  
BIPOLAR TRANSISTOR (NPN)  
Typical Characteristics  
h

FE

—— I

C  

Static Characteristic  
280  
500  
400  
1mA  
COMMON  
EMITTER  
T

a

=25
℃
 
T

a

=100

o  

C
0.9mA  
240  
200  
160  
120  
80  
0.8mA  
0.7mA  
0.6mA  
300  
200  
T

a

=25

o  

C
0.5mA  
0.4mA  
0.3mA  
0.2mA  
40  
V

CE

= 1V  
I

B

=0.1mA  
14  
0
100  
0
2
4
6
8
10  
12  
16  
1
10  
100  
500  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

—— I

C  

V

BEsat

—— I

C  

1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.4  
0.3  
0.2  
0.1  
0.0  
β
=10  
β
=10  
T

a

=25
℃  
T

a

=100
℃  
T

a

=100
℃  
T

a

=25
℃  
500  
0.1  
1
10  
100  
0.1  
1
10  
100  
500  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR CURRENT
 
I

C

(mA)  
I

C

—— V

BE  

C

ob

/ C

ib

—— V

CB

/
V

EB  

100  
500  
f=1MHz  
I

E

=0 / I

C

=0  
50  
T

a

=25

o  

C
100  
10  
1
C

ib  

T

a

=100

o  

C
10  
T

a

=25
℃  
C

ob  

V

CE

=1V  
0.1  
1
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
5
10  
REVERSE VOLTAGE  
V
(V)  
BASE-EMITTER VOLTAGE  
V

BE

(V)  
f

T

——  
I

C  

P

c

—— T

a  

0.4  
0.3  
0.2  
0.1  
0.0  
300  
100  
V

CE

=5V  
T

a

=25

o  

C
10  
60  
1
10  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
COLLECTOR CURRENT
 
I

C

(mA)  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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BC817  
BIPOLAR TRANSISTOR (NPN)  
SOT-23 Package
 
Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min.  
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
Max.  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min.  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
Max.  
A
A1  
A2  
b
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
c
D
E
E1  
e
0.950 TYP  
0.550 R
E
F  
0.037 TYP  
0.022 REF  
e1  
L
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8°  
SOT-23 Suggested Pad Layout  
Note:  
1.Controlling dimension: in millimeters  
2.General tolerance: ±0.05mm  
3.The pad layout is for reference purposes only  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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BC817  
BIPOLAR TRANSISTOR (NPN)  
SOT-23 Tape
 
and Reel  
SOT-23 Embossed Carrier Tape  
DIMENSIONS ARE IN MILLIMETER  
TYPE  
A
B
C
d
E
F
P0  
P
P1  
W
SOT-23  
3.15  
±0.1  
2.77  
±0.1  
1.22  
±0.1  
Ø1.50  
±0.1  
1.75  
±0.1  
3.50  
±0.1  
4.00  
±0.1  
4.00  
±0.1  
2.00  
±0.1  
8.00  
±0.1  
TOLERANCE  
SOT-23 Tape Leader and Trailer  
SOT-23 Reel  
DIMENSIONS ARE IN MILLIMETER  
REEL OPTION  
7’’ DIA  
D
Ø178  
±2  
D1  
54.40  
±1  
D2  
13.00  
±1  
G
R78  
±1  
H
R25.60  
±1  
I
W1  
W2  
R6.50  
±1  
9.50  
±1  
12.30  
±1  
TOLERANCE  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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