Guangdong-Hottech-BC846BW

Part #Guangdong-Hottech-BC846BW
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Guangdong-Hottech-BC846BW
BC846W  
BIPOLAR TRANSISTOR (NPN)  
FE
A
T
URES  
Complementary to BC856W  
Excellent h

FE

Linearity  
High Collector Current  
Surface Mount device  
SOT-323  
MECHANICAL DATA  
Case: SOT-323  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.008 grams (approximate)  
MAXIMUM RATINGS
 
(T

A

= 25°C unless otherwise noted)  
Parameter  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I
C  
Value  
80  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
65  
V
Emitter-Base Voltage  
6
V
Collector Current  
Collector Power Dissipation  
100  
mA  
mW  
°C/W  
°C  
P
C  
150  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
R

θJA  

T
J  
833  
150  
Storage Temperature  
T
STG  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise specified)  
Parameter  
Symbol Min
 
Typ Max
 
Unit  
Conditions  
I =10uA
 
I =0  
V
(BR)CBO  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
80  
65  
6
V
V
,
E
C
V
(BR)CEO  
V
(BR)EBO  
I

CBO  

I

C

=10mA
,
I

B

=0  
I

E

=1uA
,
I

C

=0  
V
15  
nA V

CB

=30V, I

E

=0  
V

CE

=5V, I

C

=10uA  
V

CE

=5V, I

C

=2mA  
V
V
90  
DC current gain  
h

FE  

110  
450  
0.25  
0.6  
I

C

=10mA
,
I

B

=0.5mA  
I

C

=100mA
,
I

B

=5mA  
I

C

=10mA
,
I

B

=0.5mA  
I

C

=100mA
,
I

B

=5mA  
V

CE

=5V, I

C

=2mA  
V

CE

=5V, I

C

=10mA  
V

CE

=5V,I

C

=10mA,f=100  
V

CB

=10V, f=1  
MHz  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
V

CE(sat)  

V

BE(sat)  

V

BE(ON)  

0.7  
V
0.9  
0.7  
0.77  
V
V
V
MHz  
pF  
0.58 0.66  
100  
Transition frequency  
Collector output
 
capacitance  
f

T  

C

ob  

MHz  
8
V

CE

=5V, I

C

=0.2mA,R

S

=2k
Ω
 
f=1K  
Noise figure  
NF  
10  
dB  
MHz,BW=200Hz  
CLASSIFICATION OF
 
h

FE  

Rank  
Range  
Marking  
BC846AW  
120-200  
1A  
BC846BW  
200-450  
1B  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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BC846W  
BIPOLAR TRANSISTOR (NPN)  
Typical Characteristics  
Static Characteristic  
h

FE

——  
I

C  

10  
3000  
1000  
COMMON  
EMITTER  
T

a

=25
℃
 
8
COMMON EMITTER  

CE

= 5V  
V
T

a

=100
℃  
20uA  
18uA  
16uA  
6
4
2
0
T

a

=25
℃  
14uA  
12uA  
100  
10uA  
8uA  
6uA  
4uA  
I

B

=2uA  
10  
0
1
2
3
4
5
6
7
1
10  
100  
COLLECTOR CURRENT
 
I

C

(mA)  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
V

CEsat

——  
I

C  

V

BEsat

——  
I

C  

1000  
800  
600  
400  
200  
500  
β
=20  
β
=20  
T

a

=25
℃  
T

a

=100
℃  
100  
T

a

=25
℃  
T

a

=100
℃  
10  
0.1  
1
10  
100  
0.1  
1
10  
100  
COLLECTOR CURREMT
 
I

C

(mA)  
COLLECTOR CURREMT
 
I

C

(mA)  
I

C

—— V

BE  

f

T

—— I

C  

100  
500  
COMMON EMITTER  
V

CE

=5V  
10  
℃
0
0
100  
1
℃
=
a
5
T
2
=
a
T
1
COMMON EMITTER  
V

CE

=5V  
T

a

=25
℃  
0.1  
200  
10  
0.25  
400  
600  
800  
2
4
6
8
10  
12  
COLLECTOR CURRENT
 
I

C

(mA)  
BASE-EMMITER VOLTAGE
 
V

BE

(mV)  
P

C

—— T

a  

C

ob

/C

ib

——  
V

CB

/V

EB  

200  
150  
100  
50  
100  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

10  
C

ob  

1
0
0.1  
0
25  
50  
75  
100  
125  
150  
30  
0.1  
1
10  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
REVERSE VOLTAGE  
V
(V)  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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BC846W  
BIPOLAR TRANSISTOR (NPN)  
SOT-323 Package
 
Outline Dimensions  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min.  
Max.  
1.100  
0.100  
1.000  
0.400  
0.150  
2.200  
1.350  
2.450  
Min.  
Max.  
0.043  
0.004  
0.039  
0.016  
0.006  
0.087  
0.053  
0.096  
A
A1  
A2  
b
0.900  
0.000  
0.900  
0.200  
0.080  
2.000  
1.150  
2.150  
0.035  
0.000  
0.035  
0.008  
0.003  
0.079  
0.045  
0.085  
c
D
E
E1  
e
0.650TYP  
0.525REF  
0.026TYP  
0.021REF  
e1  
L
1.200  
1.400  
0.047  
0.055  
L1  
θ
0.260  
0.460  
0.010  
0.018  
0
°  
8
°  
0
°  
8
°  
SOT-323 Suggested Pad Layout  
Note:  
1.Controlling dimension: in millimeters  
2.General tolerance: ±0.05mm  
3.The pad layout is for reference purposes only  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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©

BC846W  
BIPOLAR TRANSISTOR (NPN)  
SOT-323 Tape
 
and Reel  
SOT-323 Embossed Carrier Tape  
DIMENSIONS ARE IN MILLIMETER  
TYPE  
A
B
C
d
E
F
P0  
P
P1  
W
SOT-323  
TOLERANCE  
2.25  
±0.1  
2.55  
±0.1  
1.19  
±0.1  
Ø1.50  
±0.1  
1.75  
±0.1  
3.50  
±0.1  
4.00  
±0.1  
4.00  
±0.1  
2.00  
±0.1  
8.00  
±0.1  
SOT-323 Tape Leader and Trailer  
SOT-323 Reel  
DIMENSIONS ARE IN MILLIMETER  
REEL OPTION  
7’’ DIA  
D
Ø178  
±2  
D1  
54.40  
±1  
D2  
13.00  
±1  
G
R78  
±1  
H
R25.60  
±1  
I
W1  
W2  
R6.50  
±1  
9.50  
±1  
12.30  
±1  
TOLERANCE  
SHENZHEN HOTTECH ELECTRONICS CO.,LTD  
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