Guangdong-Hottech-BC846C

Plastic-Encapsulate Transistors  

FEATURES  

(NPN)  

BC846A/B  

For general AF applications  

BC847A/B/C

(NPN)  

High collector current  

(NPN)  

BC848A/B/C  

High current gain  

Low collector-emitter saturation voltage  

Marking  

BC846A  

BC846B  

BC847A  

BC847B  

1A  

1B  

1E  

1F  

BC847C  

BC848A  

BC848B  

BC848C  

1. BASE  

2. EMITTER  

SOT-23  

1G  

1J  

1K  

1L  

3. COLLECTO  

MAXIMUM R

A

T

INGS (TA=25  

Parameter  

unless otherwise noted)  

Symbol  

V

CBO  

V

CBO  

V

CBO  

V

CEO  

V

CEO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

BC846  

BC847  

BC848  

BC846  

BC847  

BC848  

80  

V

Collector-Base Voltage  

50  

30  

65  

V

Collector-Emitter Voltage  

45  

30  

Emitter-Base Voltage  

6

0.1  

V

A

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

0.2  

W

P

C  

T

J  

150  

T

stg  

Storage

T

e

mperature  

-55 to +150  

Page:P3-P1  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Transistors  

ELECTRICAL CHARACTERISTICS (Tamb=25  

Parameter  

unless otherwise specified)  

Symbol  

T

e

st conditions  

Min  

80  

50  

30  

65  

45  

30  

6

Typ Max Unit  

Collector-base breakdown voltage  

BC846  

BC847  

BC848  

BC846  

BC847  

BC848  

V

CBO  

I =

 

10µA, I

 

=0  

C

E

V

Collector-emitter breakdown voltage  

I =

 

10mA, I

 

=0  

C

B

V

V

CEO  

V

V

I =

 

10µA, I

 

=0  

E

Emitter-base breakdown voltage  

Collector cut-off current  

EBO  

C

V

=70 V ,  

I =0  

E

BC846  

BC847  

BC848  

BC846  

BC847  

BC848  

CB  

CB  

CB  

CE  

CE  

CE  

EB  

V

V

V

V

V

V

=50 V ,  

=30 V ,  

=60 V ,  

=45 V ,  

=30 V ,  

=5 V ,  

I =0  

E

I

CBO  

I =0  

E

0.1  

μ

A  

I =0  

B

Collector cut-off current  

I =0  

B

I

CEO  

I =0  

B

0.1  

0.1  

220  

450  

800  

0.5  

1.1  

μ

A  

μ

A  

I

I =0  

C

Emitter cut-off current  

EBO  

DC current gain  

BC846A,847A,848A  

BC846B,847B,848B  

BC847C,BC848C  

1

1

0  

200  

420  

V

= 5

V

,  

I =

 

2mA  

C

CE  

h

FE  

V

V

(sat)  

(sat)  

I =100mA,

 

I =

 

5mA  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

CE  

V

V

C

B

I =100mA,

 

I =

 

5mA  

C

BE  

B

V

= 5

V

, I

 

=

1

0mA  

C

CE  

f=100MHz  

=10

V

,

f=1MHz  

f

T

r

ansition frequency  

T

100  

MHz  

pF  

C

V

Collector output capacitance  

ob  

4.5  

CB  

BC846A/B  

BC847A/B/C  

BC848A/B/C  

Typical Characteristics  

Page:P3-P2  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Transistors  

BC846A/B  

BC847A/B/C  

BC848A/B/C  

Typical Characteristics  

Page:P3-P3  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD