Guangdong-Hottech-D882

Plastic-Encapsulate Transistors  

FEATURES  

Power dissipation  

D882

(NPN)  

Marking  

:

882  

MAXIMUM R

A

T

INGS (TA=25

 

unless otherwise noted)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

40  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current -Continuous  

Collector Power Dissipation  

Storage

T

e

mperature  

30  

V

6

V

1. BASE  

1500  

500  

mA  

mW  

2. COLLECTO  

3. EMITTER  

SOT-89  

P

C  

T

stg  

-55-150  

ELECTRICAL CHARACTERISTICS (Tamb=25

 

unless otherwise specified)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

CBO  

Test  

conditions  

Min  

40  

30  

6

Typ  

Max  

Unit  

V

I

C

= 100

μA,

I

E

=0  

I

C

= 10mA, I

B

=0  

I

E

= 100

μA,

I

C

=0  

V

CB

= 40V, I

E

=0  

V

CE

= 30

V

,

I

B

=0  

V

EB

= 6V, I

C

=0  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

V

V

1

10  

1

µA  

µA  

µA  

I

CEO  

Collector cut-off current  

I

EBO  

Emitter cut-off current  

h

FE(1)  

h

FE(2)  

V

CE(sat)  

V

BE(sat)  

V

CE

=2V, I

C

= 1A  

V

CE

=2V, I

C

= 100mA  

I

C

= 2A, I

B

= 0.2 A  

I

C

= 2A, I

B

= 0.2 A  

60  

32  

400  

DC current gain  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

0.5  

1.5  

V

V

V

CE

= 5V ,  

f =10MHz  

Ic=0.1A  

f

T  

50  

MHz  

Transition frequency  

CLASSIFIC

A

T

ION OF HFE  

Rank  

R

O

Y

GR  

200-400  

60-120  

100-200  

160-320  

Range  

Page:P2-P1  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Transistors  

D882

Typical Characteristics  

Page:P2-P2  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD