Guangdong-Hottech-HKTD90N03

HKTD

9

0N03  

MOSFET (N-CHANNEL)  

FEATURES  

TO-252  

MECHANICAL DATA  

z

z

Case: PDFN5x6  

Case Material: Molded Plastic. UL flammability  

z

Classification Rating: 94V-0  

z

Weight: 0.016 grams (approximate)  

EQUIVALENT CIRCUIT  

Marking:D

9

0N03  

z

MAXIMUM RATINGS

 

(T

A

= 25°C unless otherwise noted)  

Parameter  

Drain-source voltage  

Symbol  

V

DS  

Value  

30  

Unit  

V

Gate-source voltage  

V

GS  

±20V  

90  

V

Continuous drain current  

Power dissipation  

I

D  

A

P

D  

90  

W

Thermal resistance from Junction to ambient  

Junction and Storage temperature  

R

θJA  

T

J,

T

STG  

18  

°C/W  

°C  

-55 ~+150  

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise specified)  

Parameter  

Symbol Min Typ Max Unit  

Conditions  

Off Characteristics  

V

(BR)DSS  

Drain-Source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage current  

Gate-threshold voltage (note 1)  

V

GS

=0V, I

D

=250uA  

30  

1

V

V

DS

=30V,  

µ

A  

I

DSS  

1

V

GS

=0V  

V

DS

=0V,  

I

GSS  

±100 nA  

2.5  

V

GS

=±20V  

V

GS(th)  

1.6  

3.8  

V

DS

=20

V

,

I

D

=250μA  

5

7

mΩ  

mΩ  

V

GS

=10V, I

D

=20A  

Drain-source on-resistance (note 1)  

R

DS(ON)  

V

GS

=4.5V, I

D

=10A  

5.5  

Dynamic Characteristics  

Input capacitance  

C

iss  

C

oss  

C

rss  

2000  

320  

pF  

pF  

pF  

V

DS

=15V, V

GS

=0V, f=1MHz  

Output capacitance  

Reverse transfer capacitance  

Switching Characteristics  

Turn-on delay time  

240  

t

d(on)  

t

r  

t

d(off)  

t

f  

13  

36  

42  

16  

nS  

nS  

nS  

nS  

Turn-on rise time  

V

G

S  

V

DD

=15V.  

R

g

=3Ω  

=10V,I

D

=30A  

Turn-off delay time  

Turn-off fall time  

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

1/5  

©

HKTD

9

0N03  

MOSFET (N-CHANNEL)  

Typical Characteristics  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

2/5  

©

HKTD

9

0N03  

MOSFET (N-CHANNEL)  

Typical Characteristics  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

3/5  

©

E-mail:hkt@heketai.com  

HKTD

9

0N03  

MOSFET (N-CHANNEL)  

TO-252 PACKAGE OUTLINE DIMENSIONS  

DimensionsIn Millimeters  

DimensionsIn Inches  

Symbol  

Min.  

Max.  

2.380  

0.100  

1.400  

0.810  

0.560  

0.560  

6.700  

5.460  

6.200  

Min.  

Max.  

0.094  

0.004  

0.055  

0.032  

0.022  

0.022  

0.264  

0.215  

0.244  

A

A1  

B

b

c

c1  

D

D1  

E

2.200  

0.000  

0.800  

0.710  

0.460  

0.460  

6.500  

5.130  

6.000  

0.087  

0.000  

0.031  

0.028  

0.018  

0.018  

0.256  

0.202  

0.236  

e

2.286TYP  

0.090TYP  

e1  

M

N

4.327  

4.727  

0.170  

0.186  

1.778REF  

0.762REF  

0.070REF  

0.018REF  

L

9.800  

1.400  

1.100  

10.400  

1.700  

1.300  

0.386  

0.055  

0.043  

0.409  

0.067  

0.051  

L1  

L2  

V

2.9REF  

0.114REF  

0.190REF  

4.830REF  

Φ

TO-252 SUGGESTED PAD LAYOUT  

Note:  

1. Controlling dimension: in millimeters  

2. General tolerance: ±0.05mm  

3. The pad layout is for reference purposes only  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

4/5  

©

HKTD

9

0N03  

MOSFET (N-CHANNEL)  

TO-252 TAPE AND REEL  

TO-252 Embossed Carrier Tape  

DIMENSIONS ARE IN MILLIMETER  

TYPE  

A

B

C

d

E

F

P0  

P

P1  

W

TO-252  

6.90  

±0.1  

10.50  

±0.1  

2.70  

±0.1  

Ø1.55  

±0.1  

1.75  

±0.1  

7.50  

±0.1  

4.00  

±0.1  

8.00  

±0.1  

2.00  

±0.1  

16.00  

±0.1  

TOLERANCE  

TO-252 Tape Leader and Trailer  

TO-252 REEL  

DIMENSIONS ARE IN MILLIMETER  

REEL OPTION  

13’’ DIA  

D

D1  

D2  

Φ21.00  

±1  

G

R151.00  

±1  

H

R56.00  

±1  

I

W1  

W2  

Ø330.00 100.00  

±2 ±1  

R6.50  

±1  

16.40  

±1  

21.00  

±1  

TOLERANCE  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

5/5  

©