Guangdong-Hottech-IRLML6302
| Part # | Guangdong-Hottech-IRLML6302 |
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IRLML6302
P-Channel Power MOSFET
FEATURES
Generatio
n
V
T
echnology
Ultra Low On-Resistance
Low Profile (<1.1mm)
Fast Switching
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. U
L
f
lammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MARKING:1C
7A
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Parameter
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Max.
-0.78
-0.62
-4.9
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
A
Pulsed Drain Current
Power Dissipation
P
D
@T
A
= 25°C
540
mW
mW/˚C
V
Linear Derating Factor
4.3
V
GS
Gate-to-Source Voltage
± 12
dv/dt
-5.0
V/ns
°C
Peak Diode Recovery dv/dt
T
J,
T
STG
R
JA
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
-55 to
+ 150
230
°C/W
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20
––– –––
–––
-4.9 –––
mV/°C
Reference to 25°C, I
D
= -1mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
––– 0.60
–––
––– 0.90
-0.70
––– -1.5
0.56
––– –––
–––
––– -1.0
–––
––– -25
–––
––– -100
–––
––– 100
–––
2.4 3.6
–––
0.56 0.84
–––
1.0 1.5
V
GS
= -4.5V, I
D
= -0.61A
V
GS
= -2.7V, I
D
= -0.31A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -10V, I
D
= -0.31A
V
DS
= -16V, V
GS
= 0V
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 12V
Q
g
I
D
= -0.61A
Q
gs
Q
gd
t
d(on)
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= -16V
V
GS
= -4.5V, See Fig. 6 and 9
––– 13
–––
18
–––
–––
V
DD
= -10V
I
D
= -0.61A
t
r
ns
t
d(off)
Turn-Off Delay Time
Fall Time
–––
22 –––
–––
22 –––
–––
97 –––
R
G
= 6.2
t
f
R
D
= 16
See Fig. 10
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
––– 53
–––
pF
V
DS
= -15V
Reverse Transfer Capacitance
–––
28 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
I
S
MOSFET symbol
––– –––
-0.54
A
showing the
G
integral reverse
Pulsed Source Current
(Body Diode)
I
SM
––– ––– -4.9
p-n junction diode.
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
–––
––– -1.2
V
T
J
= 25°C, I
S
= -0.61A, V
GS
= 0V
–––
35
53
39
ns
T
J
= 25°C, I
F
= -0.61A
Q
rr
–––
26
nC di/dt
= 100A/µs
Notes:
Repetitive rating
pulse width limited by max. junction temperature. ( See fig. 11 )
;
I
SD
-0.61A, di/dt
76A/µs, V
DD
V
Pulse width
3
0
0µs duty
cycle
2%.
Surface mounted on FR-4 board, t
5sec.
,
(BR)DSS
T
J
150°C
;
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©
IRLML6302
P-Channel Power MOSFET
Typical Characteristics
10
10
VGS
–
7
.5V
–
5
.0V
–
4
.0V
–
3
.5V
–
3
.0V
–
2
.5V
– 2.0V
VGS
TOP
TOP
– 7.5V
– 5.0V
– 4.0V
– 3.5V
– 3.0V
– 2.5V
– 2.0V
BOTTOM – 1.5V
BOTTOM – 1.5V
1
1
0.1
0.1
-1.5V
20µs PULSE WIDTH
T =
25°C
20µs PULSE WIDTH
T =
150°C
J
-1.5V
J
0.01
0.01
0.1
1
10
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
10
2.0
I
D
= -0.61A
T
J
= 25°C
1.5
1.0
0.5
0.0
T
J
= 150°C
1
0.1
V
DS
= -10V
V
= -4.5V
GS
20µs PULSE WIDTH
0.01
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40
60 80
100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T ,
Junction Temperature (°C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
180
10
8
I
V
= -0.61A
= -16V
V
C
C
C
= 0V,
f = 1MHz
D
DS
GS
= C
+ C
, C
SHORTED
iss
gs
gd
ds
160
140
120
100
80
= C
rss
oss
gd
= C
+ C
ds
gd
C
iss
C
oss
6
4
C
rss
60
40
2
20
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
1
10
100
0.0
1.0
2.0
3.0
4.0
-V ,
Drain-to-Source Voltage (V)
DS
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
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IRLML6302
P-Channel Power MOSFET
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100µs
1ms
1
T
=
1
50°
C
J
1
T
= 25°C
J
0.1
10ms
T
T
= 25°C
=
1
50°C
A
J
V
= 0V
Single Pulse
GS
0.01
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
-V ,
Source-to-Drain Voltage (V)
SD
-V ,
Drain-to-Source Voltage (V)
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
R
D
V
DS
Q
G
V
GS
D.U.T.
-4.5V
R
G
Q
Q
GD
GS
V
DD
V
G
-4.5V
Pulse Width
µs
Duty Factor
Charge
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time TestCircuit
Current Regulator
Same Type as D.U.T.
V
DS
50K
90%
.2
F
12V
.3
F
V
DS
D.U.T.
10%
V
GS
V
GS
-3mA
t
t
r
t
t
d(on)
d(off) f
I
I
D
G
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
Fig 10b.
Switching Time Waveforms
1000
D = 0.50
100
10
1
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGL
E
P
ULSE
(THERMAL RESPONSE)
t
2
Notes:
1.
Duty factor D = t
1
/ t
2
2.
Pea
k
T
J
= P
DM
x
Z
thJA
+ T
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML6302
P-Channel Power MOSFET
Peak Diode Recovery dvldt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
D.U.T
Ground Plane
Low Leakage Inductance
Current Transformer
–
+
–
+
–
**
R
G
dv/dt controlled by R
G
I
SD
controlled by Duty Factor “D”
D.U.T. – Device Under Test
+
–
V
DD
V
GS
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D =
Period
P.W.
V
[
=10V
] ***
GS
D.U.T. I
Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
Waveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
5%
***
V
GS
= 5.0V for Logic Level and GV Drive Devices
Fig 13.
For P-Channel HEXFETS
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
4 / 6
©
IRLML6302
P-Channel Power MOSFET
SOT-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
c
D
E
E1
e
0.950 TYP
0.550 REF
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.
Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
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©
IRLML6302
P-Channel Power MOSFET
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
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/
6
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E-mail:hkt@heketai.com
