Guangdong-Hottech-KTA1298

Plastic-Encapsulate Transistors  

FEATURES  

Low frequency power amplifier application  

KTA1298

(PNP)  

Power switching application  

MAXIMUM R

A

T

INGS (TA=25  

Parameter  

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-35  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

-30  

V

-5  

V

-800  

mA  

mW  

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

1. BASE  

200  

P

C  

2. EMITTER  

SOT-23  

T

J  

150  

3. COLLECTO  

T

stg  

-55 to +150  

Storage

T

e

mperature  

ELECTRICAL CHARACTERISTICS (Tamb=25  

Parameter  

unless otherwise specified)  

Symbol  

T

e

st  

conditions  

Min  

Typ  

Max  

Unit  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

V

CBO  

V

CEO  

V

EBO  

I

CBO  

I

C

=- 1mA,I

E

=0  

-35  

-30  

-5  

V

V

I

C

= -10mA, I

B

=0  

I

E

=-1mA, I

C

=0  

V

Collector  

Emitter  

cut-off  

cut-off  

current  

current  

V

CB

=-30

V

,

I

E

=0  

-0.1  

-0.1  

320  

μ

A  

μ

A  

I

EBO  

V

EB

= -5V,I

C

=0  

h

FE(1)  

h

FE(2)  

V

CE

(sat)  

V

BE  

V

CE

=-1

V

,

I

C

=-100mA  

V

CE

=-1

V

,

I

C

=-800mA  

I

C

=-500mA, I

B

= -20mA  

V

CE

=-1

V

,

I

C

=-10mA  

100  

40  

DC  

current  

gain  

Collector-emitter saturation voltage  

Base- emitter voltage  

-0.4  

-0.8  

V

V

-0.5  

Transition  

frequency  

f

T  

V

CE

=-5

V

,

I

C

=-10mA,  

120  

13  

MHz  

pF  

Collector output capacitance  

C

ob  

V

CB

=-10V, I

E

=0,f=1MHz  

CLASSIFICATION OF

 

h

FE  

Marking  

IO  

IY  

Range  

100-200  

160-320  

Page:P2-P1  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Transistors  

KTA1298

Typical Characteristics  

Page:P2-P2  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD