Guangdong-Hottech-KTC3265

Plastic-Encapsulate Transistors  

FEATURES  

High DC current gain  

KTC3265

(NPN)  

Complementary to KTA1298  

MAXIMUM R

A

T

INGS (TA=25  

Parameter  

unless otherwise noted)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

V

35  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

30  

5

V

V

1. BASE  

800  

mA  

mW  

Collector Current -Continuous  

Collector Power Dissipation  

Junction

T

e

mperature  

200  

2. EMITTER  

SOT-23  

P

C  

3. COLLECTO  

T

J  

150  

T

stg  

-55 to +150  

Storage

T

e

mperature  

ELECTRICAL CHARACTERISTICS (Tamb=25  

Parameter  

unless otherwise specified)  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

CBO  

T

e

st  

conditions  

Min  

Typ  

Max  

Unit  

V

I

C

= 100

μ

A, I

E

=0  

I

C

= 10mA, I

B

=0  

I

E

=100

μ

A, I

C

=0  

V

CB

=30 V, I

E

=0  

V

EB

=5

V

,

I

C

=0  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

35  

30  

5

V

V

μ

A  

μ

A  

0.1  

0.1  

320  

0.5  

0.8  

I

EBO  

Collector cut-off current  

h

FE  

V

CE

=1V, I

C

= 100mA  

I

C

=500mA, I

B

=20mA  

100  

0.5  

DC current gain  

V

CE

(sat)  

V

BE  

V

V

Collector-emitter saturation voltage  

base-emitter voltage  

V

CE

=1V,I

C

=10mA  

V

CE

=5V, I

C

=10mA  

f

T  

Transition frequency  

120  

13  

MHz  

pF  

f=

100MHz  

C

ob  

V

CB

=10V,I

E

=0,f=1MH

Z  

Collector output capacitance  

CLASSIFICATION OF

 

h

FE  

Marking  

EO  

EY  

Range  

100-200  

160-320  

Page:P2-P1  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Transistors  

KTC3265

Typical Characteristics  

Page:P2-P2  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD