Guangdong-Hottech-MMBT2907A

A

MMBT2907  

BIPOLAR TRANSISTOR (PNP)  

FE

A

T

URES  



Complementary to MMBT2222  



General purpose Amplifier  



Surface Mount device  

SOT-23  

MECHANICAL DATA  









Case: SOT-23  

Case Material: Molded Plastic. UL flammability  

Classification Rating: 94V-0  

Weight: 0.008 grams (approximate)  

MAXIMUM RATINGS

 

(T

A

= 25°C unless otherwise noted)  

Parameter  

Collector-Base Voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-60  

Unit  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

Collector Power Dissipation  

-60  

-5  

-600  

250  

500  

150  

V

V

mA  

mW  

°C/W  

°C  

P

C  

Thermal Resistance From Junction To Ambient  

Junction Temperature  

R

θJA  

T

J  

Storage Temperature  

T

STG  

-55 ~+150  

°C  

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise specified)  

Parameter  

Symbol Min Typ Max Unit  

Conditions  

I =-10

 

uA I

 

=0  

V

(BR)CBO  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

Collector cut-off current  

Emitter cut-off current  

-60  

-60  

-5  

V

V

，

E

C

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

I

CEX  

I

EBO  

h

FE1  

h

FE2  

h

FE3  

V

CE(sat)  

V

CE(sat)  

V

BE(sat)  

V

BE(sat)  

f

T  

I

C

=-10mA

，

I

B

=0  

I =-10uA

 

I =0  

V

，

E

C

-20  

-50  

-10  

300  

nA  

nA  

nA  

V

CB

=-50V, I

E

=0  

V

CE

=-30V, V

BE(OFF)

=-0.5V  

V

EB

=-3V, I

C

=0  

V

CE

=-10V, I

C

=-150mA  

V

CE

=-10V, I

C

=-0.1mA  

V

CE

=-10V, I

C

=-500mA  

I

C

=-500mA

，

I

B

=-50mA  

I

C

=-150mA

，

I

B

=-15mA  

I

C

=-500mA

，

I

B

=-50mA  

100  

52  

32  

DC current gain  

-0.67  

-0.4  

-1.2  

-1  

V

V

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

V

V

I

C

=-150mA

，

I

B

=-15mA  

V

CE

=-20V

,

I

C

=-50mA,f=100  

V

CE

=-30V,  

I

C

=-150mA

，

I

B1

=-15mA  

V

CE

=-6V

,

I

C

=-150mA  

I

B1

=I

B2

=-15mA  

Transition frequency  

Delay time  

200  

MHz  

ns  

ns  

ns  

ns  

MHz  

t

d  

t

r  

10  

25  

Rise time  

Storage time  

Fall time  

t

S  

t

f  

225  

60  

CLASSIFICATION OF

 

h

FE  

Rank  

Range  

Marking  

L

H

100-200  

M2B  

200-300  

M2B  

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A

MMBT2907  

BIPOLAR TRANSISTOR (PNP)  

Typical Characteristics  

Static Characteristic  

h

FE

——  

I

C  

-200  

400  

300  

200  

100  

0

-900uA  

-810uA  

COMMON EMITTER  

V

CE

= -10V  

COMMON  

EMITTER  

T

a

=25

℃

 

-720uA  

T

a

=100

℃  

-630uA  

-540uA  

-450uA  

-150  

-360uA  

-100  

-50  

-0  

T

a

=25

℃  

-270uA  

-180uA  

I

B

=-90uA  

-0  

-1  

-0  

-5  

-10  

-15  

-20  

-1  

-10  

-100  

-600  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

V

CEsat

——  

V

BEsat

——  

I

C  

I

C  

-1000  

-100  

-10  

-1200  

-900  

T

a

=25

℃  

T

a

=100

℃  

-600  

T

a

=100

℃  

T

a

=25

℃  

β

=10  

β

=10  

-300  

-600  

-600  

-10  

-100  

-1  

-10  

-100  

COLLECTOR CURREMT

 

I

C

(mA)  

COLLECTOR CURREMT

 

I

C

(mA)  

C

ob

/C

ib

——  

V

CB

/V

EB  

I

C

——  

V

BE  

100  

10  

1

-600  

-100  

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

C

ib  

℃

0

0

1

=

-10  

-1  

℃

a

T

5

2

=

a

T

C

ob  

COMMON EMITTER  

V

CE

= -10V  

-0.1  

-0.1  

-1  

-10  

-20  

-300  

-600  

-900  

-1200  

REVERSE VOLTAGE  

V

(V)  

BASE-EMMITER VOLTAGE

 

V

BE

(mV)  

P

C

—— T

a  

f

T

——  

I

C  

300  

250  

200  

150  

100  

50  

500  

400  

300  

200  

V

CE

=-20V  

T

a

=25

o  

C

0

0

25  

50  

75  

100  

125  

150  

-0  

-10  

-20  

-30  

-40  

-50  

-60  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

COLLECTOR CURRENT

 

I

C

(mA)  

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A

MMBT2907  

BIPOLAR TRANSISTOR (PNP)  

SOT-23 Package

 

Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

0.900  

0.000  

0.900  

0.300  

0.080  

2.800  

1.200  

2.250  

Max.  

1.150  

0.100  

1.050  

0.500  

0.150  

3.000  

1.400  

2.550  

Min.  

0.035  

0.000  

0.035  

0.012  

0.003  

0.110  

0.047  

0.089  

Max.  

0.045  

0.004  

0.041  

0.020  

0.006  

0.118  

0.055  

0.100  

A

A1  

A2  

b

c

D

E

E1  

e

0.950 TYP  

0.550 R

E

F  

0.037 TYP  

0.022 REF  

e1  

L

1.800  

2.000  

0.071  

0.079  

L1  

θ

0.300  

0°  

0.500  

8°  

0.012  

0°  

0.020  

8°  

SOT-23 Suggested Pad Layout  

Note:  

1.Controlling dimension: in millimeters  

2.General tolerance: ±0.05mm  

3.The pad layout is for reference purposes only  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

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©

A

MMBT2907  

BIPOLAR TRANSISTOR (PNP)  

SOT-23 Tape

 

and Reel  

SOT-23 Embossed Carrier Tape  

DIMENSIONS ARE IN MILLIMETER  

TYPE  

A

B

C

d

E

F

P0  

P

P1  

W

SOT-23  

3.15  

±0.1  

2.77  

±0.1  

1.22  

±0.1  

Ø1.50  

±0.1  

1.75  

±0.1  

3.50  

±0.1  

4.00  

±0.1  

4.00  

±0.1  

2.00  

±0.1  

8.00  

±0.1  

TOLERANCE  

SOT-23 Tape Leader and Trailer  

SOT-23 Reel  

DIMENSIONS ARE IN MILLIMETER  

REEL OPTION  

7’’ DIA  

D

Ø178  

±2  

D1  

54.40  

±1  

D2  

13.00  

±1  

G

R78  

±1  

H

R25.60  

±1  

I

W1  

W2  

R6.50  

±1  

9.50  

±1  

12.30  

±1  

TOLERANCE  

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