Guangdong-Hottech-MMBT4403
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MMBT4403
BIPOLAR TRANSISTOR (PNP)
FE
A
T
URES
Complementary to MMBT4401
Switching Transistor
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector-Base Voltage
Symbol
Value
-40
Unit
V
V
CBO
V
CEO
V
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
-40
-5
V
V
Collector Current
I
C
P
C
R
θJA
-600
300
417
mA
mW
°C/W
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
T
J
150
°C
°C
Storage Temperature
T
STG
-55 ~+150
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
-40
-40
-5
V
I
C
=-100uA
，
I
E
=0
I
C
=-1mA
，
I
B
=0
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
V
，
I =-100uA
I =0
E C
I
CBO
I
CEX
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
-0.1
-0.1
-0.1
uA
uA
uA
V
CB
=-35V, I
E
=0
V
CE
=-35V, V
BE
=-0.4V
V
EB
=-4V, I
C
=0
30
60
100
100
20
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
I
C
=-150mA
，
I
B
=-15mA
I
C
=-500mA
，
I
B
=-50mA
I
C
=-150mA
，
I
B
=-15mA
I
C
=-500mA
，
I
B
=-50mA
V
CE
=-10V
,
I
C
=-20mA,f=100
V
CC
=-30V, V
BE(OFF)
=-0.5V,
I
C
=-150mA
，
I
B1
=-15mA
V
CC
=-30V
,
I
C
=-150mA
I
B1
=I
B2
=-15mA
DC current gain
300
-0.4
-0.75
-0.95
-1.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Delay time
Rise time
Storage time
Fall time
200
MHz
ns
ns
ns
ns
MHz
t
d
t
r
t
S
t
f
15
20
225
60
CLASSIFICATION OF
h
FE
Range
100-300
2T
Marking
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MMBT4403
BIPOLAR TRANSISTOR (PNP)
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-250
1000
COMMON
EMITTER
T
a
=25
℃
COMMON EMITTER
V
CE
=-2V
T
a
=100
℃
-200
-1mA
-0.9mA
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-150
-100
-50
-0
T
a
=25
℃
100
-0.3mA
-0.2mA
I
B
=-0.1mA
10
-600
-1
-10
-100
-0
-2
-4
-6
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
-1.2
-700
-300
β
=10
β
=10
T
a
=25
℃
-0.8
-0.4
-0.0
T
a
=100
℃
-100
-30
T
a
=100
℃
T
a
=25
℃
-10
-3
-3
-1
-10
-30
-100
-600
-1.2
-30
-1
-10
-30
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
50
-600
-100
f=1MHz
COMMON EMITTER
V
CE
=-2V
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
C
ob
10
T
a
=100
℃
-10
-1
T
a
=25
℃
1
1
-0.1
-0.0
-0.1
-1
-10
-30
-0.4
-0.8
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
f
T
—— I
C
P
C
—— T
a
400
300
200
100
0
-600
V
CE
=-10V
T
a
=25
℃
-100
-10
-1
-3
-10
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
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MMBT4403
BIPOLAR TRANSISTOR (PNP)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
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MMBT4403
BIPOLAR TRANSISTOR (PNP)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
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