Guangdong-Hottech-MMBTA42
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MMBTA42
BIPOLAR TRANSISTOR (NPN)
FE
A
T
URES
Complementary to MMBTA92
High breakdown voltage
Low Collector-emitter saturation voltage
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
300
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
300
V
Emitter-Base Voltage
5
V
Collector Current(continuous)
300
mA
mA
mW
°C/W
°C
Collector Current(peak)
Collector Power Dissipation
I
CM
500
P
C
350
Thermal Resistance From Junction To Ambient
Junction Temperature
R
θJA
T
J
357
150
Storage Temperature
T
STG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
I
C
=100uA
，
I
E
=0
I =1mA
I =0
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
300
300
5
V
V
，
C
B
V
，
I =100uA
I =0
E C
0.25 uA V
CB
=200V, I
E
=0
Emitter cut-off current
V
EB
=5V, I
C
=0
I
EBO
0.1
uA
h
FE1
60
100
60
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=30mA
I
C
=100mA
，
I
B
=10mA
I
C
=100mA
，
I
B
=10mA
DC current gain
h
FE2
200
h
FE3
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
0.3
1
V
V
V
CE
=20V,I
C
=10mA, f=30
50
MHz
MHz
CLASSIFICATION OF
h
FE
Rank
Range
100-200
1D
Marking
1
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
MMBTA42
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
V
CE
I
C
——
h
FE
——
I
C
1000
100
10
18
16
14
12
10
8
90uA
80uA
COMMON
EMITTER
T
a
=25
℃
70uA
60uA
50uA
40uA
30uA
20uA
I
B
=10uA
T
a
=100
℃
T
a
=25
℃
6
4
2
COMMON EMITTER
V
CE
=10V
0
0.1
1
10
100
0
2
4
6
8
10
12
14
16
18
20
22
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
——
V
BEsat
—— I
C
I
C
900
500
T
a
=25
℃
600
T
a
=100
℃
T
a
=25
℃
100
T
a
=100
℃
β
=10
β
=10
10
300
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
I
C
——
V
BE
f
T
——
I
C
100
10
1
300
100
℃
℃
0
0
5
2
1
=
a
=
a
T
T
COMMON EMITTER
V
CE
=20V
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
0.1
10
0
300
600
900
1200
0.1
1
10
100
COLLECTOR CURRENT
I
C
(mA)
BASE-EMMITER VOLTAGE
V
BE
(mV)
C
ob
/C
ib
——
V
CB
/V
EB
P
C
—— T
a
100
400
300
200
100
0
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
C
ib
10
C
ob
1
0.1
1
10
20
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
MMBTA42
BIPOLAR TRANSISTOR (NPN)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
3
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
MMBTA42
BIPOLAR TRANSISTOR (NPN)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
4
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
