Guangdong-Hottech-MMBTH10
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MMBTH10
BIPOLAR TRANSISTOR (NPN)
FE
A
T
URES
VHF/UHF Transistor
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
Value
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
25
V
CEO
V
V
EBO
5
V
Collector Current
I
C
50
mA
mW
°C/W
°C
Collector Power Dissipation
P
C
R
θJA
T
J
225
Thermal Resistance From Junction To Ambient
Junction Temperature
556
150
Storage Temperature
T
STG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max
Unit
Conditions
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
30
25
3
V
V
I
C
=100uA
，
I
E
=0
I =1mA
I =0
，
C
B
V
I
E
=10uA
，
I
C
=0
0.1
0.1
uA
uA
V
CB
=25V, I
E
=0
Emitter cut-off current
V
EB
=2V, I
C
=0
I
EBO
DC current gain
h
FE
60
V
CE
=10V, I
C
=4mA
I
C
=4mA
，
I
B
=0.4mA
V
CE
=10V, I
C
=4mA
200
0.3
Collector-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
V
BE
V
V
0.95
V
CE
=10V,I
C
=4mA,f=100
Transition frequency
f
T
650
MHz
pF
MHz
V
CE
=10V, I
E
=0, f=1
Collector output
capacitance
C
ob
0.7
MHz
1
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
MMBTH10
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
h
FE
——
I
C
Static Characteristic
1000
10
COMMON EMITTER
V
CE
=10V
COMMON
EMITTER
T
a
=25
℃
8
50uA
45uA
T
a
=100
℃
T
a
=25
℃
40uA
35uA
6
4
100
30uA
25uA
20uA
15uA
2
0
10uA
I
B
=5uA
10
0
2
4
6
8
10
12
50
1.0
10
1
10
50
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
—— I
C
V
BEsat
—— I
C
1
1.0
β
=10
β
=10
0.8
0.6
0.4
T
a
=25
℃
0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0.01
0.1
1
10
0.1
1
10
50
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
——
V
CB
/ V
EB
I
C
——
V
BE
10
50
f=1MHz
I
E
=0/I
C
=0
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
T
a
=100
℃
10
C
ib
1
C
ob
T
a
=25
℃
1
0.1
0.1
3
20
0.2
0.4
0.6
0.8
0.1
0.3
1
10
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
f
T
——
I
C
P
C
—— T
a
1200
900
600
300
0
270
225
180
135
90
COMMON EMITTER
V
CE
=10V
45
T
a
=25
℃
0
1
3
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
MMBTH10
BIPOLAR TRANSISTOR (NPN)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
3
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SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
MMBTH10
BIPOLAR TRANSISTOR (NPN)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
4
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SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
