Guangdong-Hottech-PXT8050
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PXT8050
BIPOLAR TRANSISTOR (NPN)
FE
A
T
URES
Complementary to PXT8550
Surface Mount device
SOT-89
MECHANICAL DATA
Case: SOT-89
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.055 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
25
V
Emitter-Base Voltage
5
V
Collector Current
1.5
A
Collector Power Dissipation
P
C
500
mW
°C/W
°C
°C
Thermal Resistance From Junction To Ambient
Junction Temperature
R
θJA
T
J
250
150
Storage Temperature
T
STG
-55 ~+150
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
I
C
=100uA
，
I
E
=0
I =0.1mA
I =0
V
(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
40
25
5
V
V
V
(BR)CEO
V
(BR)EBO
I
CBO
，
C
B
V
I
E
=100uA
，
I
C
=0
V
CB
=40V, I
E
=0
0.1
0.1
uA
Collector cut-off current
Emitter cut-off current
I
CEO
uA V
CE
=20V, I
E
=0
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
V
BE
0.1
uA V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
85
40
400
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
0.5
1.2
1
V
V
I
C
=800mA
，
I
B
=80mA
I
C
=800mA
，
I
B
=80mA
V
CE
=1V, I
C
=10mA
I
B
=1A
V
Base-emitter positive favor voltage
Transition frequency
V
BEF
f
T
1.55
V
V
CE
=10V,I
C
=50mA, f=30
100
MHz
pF
MHz
V
CB
=10V, I
E
=0, f=1
MHz
Collector output
capacitance
C
ob
15
CLASSIFICATION OF
h
FE
Rank
B
C
D
D3
Range
85-160
120-200
160-300
300-400
Marking
Y1
1
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
PXT8050
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
h
FE
——
I
C
Static Characteristic
0.30
1000
COMMON
EMITTER
T
a
=25
℃
1mA
0.9mA
0.8mA
0.7mA
0.25
T
a
=100
℃
T
a
=25
℃
300
100
0.20
0.15
0.10
0.05
0.00
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
COMMON EMITTER
V
CE
= 1V
I
B
=0.1mA
10
0
1
0
2
1
2
3
4
5
6
7
1
10
100
1000 1500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
——
V
BEsat
——
I
C
I
C
1000
100
10
1200
1000
800
600
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
400
β
=10
β
=10
1
10
100
1000 1500
1
10
100
1000 1500
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
C
ob
/C
ib
——
V
CB
/V
EB
I
C
——
V
BE
100
1500
1000
f=1MHz
I
E
=0/I
C
=0
C
ib
T
a
=25
℃
100
℃
C
ob
℃
0
0
5
2
1
=
=
a
10
a
T
T
10
COMMON EMITTER
CE
= 1V
V
1
1
0.1
1
10
20
300
600
900
1200
BESE-EMMITER VOLTAGE
V
BE
(mV)
REVERSE VOLTAGE
V
(V)
I
C
P
C
—— T
a
f
T
——
1000
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
10
1
COMMON EMITTER
CE
=10V
T
a
=25
℃
V
10
100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
COLLECTOR CURRENT
I
C
(mA)
2
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
PXT8050
BIPOLAR TRANSISTOR (NPN)
SOT-89 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
1.400
0.320
0.400
0.350
4.400
Max.
1.600
0.520
0.580
0.440
4.600
Min.
0.055
0.013
0.016
0.014
0.173
Max.
0.063
0.020
0.023
0.017
0.181
A
b
b1
c
D
D1
E
1.550REF
0.061REF
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
E1
e
1.500TYP
3.000TYP
0.060TYP
0.118TYP
e1
L
0.900
1.200
0.035
0.047
SOT-89 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
3
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
PXT8050
BIPOLAR TRANSISTOR (NPN)
SOT-89 Tape
and Reel
SOT-89 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-89
4.85
±0.1
4.45
±0.1
1.85
±0.1
Ø1.50
±0.1
1.75
±0.1
5.50
±0.1
4.00
±0.1
8.00
±0.1
2.00
±0.1
12.00
±0.1
TOLERANCE
SOT-89 Tape Leader and Trailer
SOT-89 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
13.20
±1
16.50
±1
TOLERANCE
4
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
