Guangdong-Hottech-PXT8550

PXT8550  

BIPOLAR TRANSISTOR (PNP)  

FE

A

T

URES  



Complementary to PXT8050  



Surface Mount device  

SOT-89  

MECHANICAL DATA  









Case: SOT-89  

Case Material: Molded Plastic. UL flammability  

Classification Rating: 94V-0  

Weight: 0.055 grams (approximate)  

MAXIMUM RATINGS

 

(T

A

= 25°C unless otherwise noted)  

Parameter  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-40  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

-25  

V

Emitter-Base Voltage  

-5  

V

Collector Current  

-1.5  

A

Collector Power Dissipation  

P

C  

500  

mW  

°C/W  

°C  

°C  

Thermal Resistance From Junction To Ambient  

Junction Temperature  

R

θJA  

T

J  

250  

150  

Storage Temperature  

T

STG  

-55 ~+150  

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise specified)  

Parameter  

Symbol Min Typ Max

 

Unit  

Conditions  

I

C

=-100uA

，

I

E

=0  

I =-0.1mA

 

I =0  

V

(BR)CBO  

Collector-base breakdown voltage  

Collector-emitter breakdown voltage  

Emitter-base breakdown voltage  

Collector cut-off current  

-40  

-25  

-5  

V

V

V

(BR)CEO  

V

(BR)EBO  

I

CBO  

，

C

B

V

I

E

=-100uA

，

I

C

=0  

V

CB

=-40V, I

E

=0  

-0.1  

-0.1  

uA  

Collector cut-off current  

Emitter cut-off current  

I

CEO  

uA V

CE

=-20V, I

B

=0  

uA V

EB

=-5V, I

C

=0  

I

EBO  

h

FE1  

-0.1  

400  

85  

40  

V

CE

=-1V, I

C

=-100mA  

V

CE

=-1V, I

C

=-800mA  

DC current gain  

h

FE2  

Collector-emitter saturation voltage  

Base-emitter saturation voltage  

Base-emitter on voltage  

I

C

=-800mA

，

I

B

=-80mA  

I

C

=-800mA

，

I

B

=-80mA  

V

CE

=-1V

,

I

C

=-10mA  

I

B

=-1A  

V

CE(sat)  

V

BE(sat)  

V

BE(ON)  

V

BEF  

f

T  

-0.5  

-1.2  

-1  

V

V

V

Base-emitter positive favor voltage  

Transition frequency  

-1.55  

V

V

CE

=-10V

,

I

C

=-50mA  

V

CB

=-10V, I

E

=0, f=1  

100  

MHz  

pF  

Collector output

 

capacitance  

C

ob  

20  

MHz  

CLASSIFICATION OF

 

h

FE  

Rank  

L

H

D3  

Range  

120-200  

160-300  

Y2  

300-400  

Marking  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

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PXT8550  

BIPOLAR TRANSISTOR (PNP)  

Typical Characteristics  

h

FE

——  

I

C  

Static Characteristic  

600  

300  

-140  

COMMON  

EMITTER  

T

a

=25

℃

 

T

a

=100

℃  

-500uA  

-120  

-450uA  

T

a

=25

℃  

-400uA  

-350uA  

-100  

-80  

-60  

-40  

-20  

-0  

100  

-300uA  

-250uA  

-200uA  

-150uA  

-100uA  

I

B

=-50uA  

30  

10  

COMMON EMITTER  

V

CE

=-1V  

-3  

-30  

-100  

-300  

-1000 -1500  

-0.0  

-0.5  

-1.0  

-1.5  

-2.0  

-2.5  

-1  

-10  

COLLECTOR-EMITTER VOLTAGE

 

V

CE

(V)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

BEsat

——  

I

C  

I

C  

V

CEsat

——  

-1.2  

-1.0  

-0.8  

-0.6  

-0.4  

-0.2  

-0.0  

-1000  

-300  

-100  

T

a

=100

℃  

T

a

=25

℃  

T

a

=25

℃  

-30  

-10  

T

a

=100

℃  

-3  

-1  

β

=10  

β

=10  

-1  

-10  

-100  

-1000  

-1  

-10  

-100  

-300  

-1000  

-1500  

-3  

-30  

-300  

-1500  

-3  

-30  

COLLECTOR CURRENT

 

I

C

(mA)  

COLLECTOR CURRENT

 

I

C

(mA)  

V

BE

—— I

C  

V

CB

/ V

EB  

C

ob

/ C

ib

——  

100  

-1500  

-1000  

COMMON EMITTER  

V

CE

=-1V  

f=1MHz  

I

E

=0/I

C

=0  

T

a

=25

℃  

-300  

-100  

C

ib  

T

a

=100

℃  

C

ob  

30  

-30  

-10  

T

a

=25

℃  

-3  

-1  

10  

-0.2  

-0.5  

-3  

20  

-0.0  

-0.2  

-0.4  

-0.6  

-0.8  

-1.0  

-1.2  

-1  

-10  

REVERSE VOLTAGE  

V

(V)  

BASE-EMMITER VOLTAGE

 

V

BE

(mV)  

P

C

—— T

a  

I

C  

f

T

——  

500  

600  

300  

500  

400  

300  

200  

100  

0

100  

30  

10  

V

CE

=-10V  

T

a

=25

℃  

-3  

-30  

-1  

-10  

-100  

0

25  

50  

75  

100  

125  

150  

COLLECTOR CURRENT

 

I

C

(mA)  

AMBIENT TEMPERATURE

 

T

a

(

℃

)  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

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PXT8550  

BIPOLAR TRANSISTOR (PNP)  

SOT-89 Package

 

Outline Dimensions  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

1.400  

0.320  

0.400  

0.350  

4.400  

Max.  

1.600  

0.520  

0.580  

0.440  

4.600  

Min.  

0.055  

0.013  

0.016  

0.014  

0.173  

Max.  

0.063  

0.020  

0.023  

0.017  

0.181  

A

b

b1  

c

D

D1  

E

1.550REF  

0.061REF  

2.300  

3.940  

2.600  

4.250  

0.091  

0.155  

0.102  

0.167  

E1  

e

1.500TYP  

3.000TYP  

0.060TYP  

0.118TYP  

e1  

L

0.900  

1.200  

0.035  

0.047  

SOT-89 Suggested Pad Layout  

Note:  

1.Controlling dimension: in millimeters  

2.General tolerance: ±0.05mm  

3.The pad layout is for reference purposes only  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

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PXT8550  

BIPOLAR TRANSISTOR (PNP)  

SOT-89 Tape

 

and Reel  

SOT-89 Embossed Carrier Tape  

DIMENSIONS ARE IN MILLIMETER  

TYPE  

A

B

C

d

E

F

P0  

P

P1  

W

SOT-89  

4.85  

±0.1  

4.45  

±0.1  

1.85  

±0.1  

Ø1.50  

±0.1  

1.75  

±0.1  

5.50  

±0.1  

4.00  

±0.1  

8.00  

±0.1  

2.00  

±0.1  

12.00  

±0.1  

TOLERANCE  

SOT-89 Tape Leader and Trailer  

SOT-89 Reel  

DIMENSIONS ARE IN MILLIMETER  

REEL OPTION  

7’’ DIA  

D

Ø178  

±2  

D1  

54.40  

±1  

D2  

13.00  

±1  

G

R78  

±1  

H

R25.60  

±1  

I

W1  

W2  

R6.50  

±1  

13.20  

±1  

16.50  

±1  

TOLERANCE  

SHENZHEN HOTTECH ELECTRONICS CO.,LTD  

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