Guangdong-Hottech-S9013
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S9013
BIPOLAR TRANSISTOR (NPN)
FE
A
T
URES
Complementary to S9012
Excellent h
FE
Linearity
High Collector Current
Surface Mount device
SOT-23
MECHANICAL DATA
Case: SOT-23
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
Unit
V
Collector-Base Voltage
40
25
Collector-Emitter Voltage
V
Emitter-Base Voltage
5
V
Collector Current
Collector Power Dissipation
500
mA
mW
°C/W
°C
P
C
300
Thermal Resistance From Junction To Ambient
Junction Temperature
R
θJA
T
J
416
150
Storage Temperature
T
STG
-55 ~+150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
I
C
=100uA
，
I
E
=0
I =1mA
I =0
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
40
25
5
V
V
，
C
B
V
I
E
=100uA
，
I
C
=0
0.1
0.1
uA
V
CB
=40V, I
E
=0
Collector cut-off current
Emitter cut-off current
V
CE
=20V, I
B
=0
I
CEO
uA
uA
I
EBO
h
FE1
0.1
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
120
40
400
DC current gain
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
0.6
1.2
V
V
I
C
=500mA
，
I
B
=50mA
I
C
=500mA
，
I
B
=50mA
V
CE
=6V, I
C
=20mA, f=30
150
MHz
pF
MHz
V
CE
=6V, I
E
=0, f=1
MHz
Collector output
capacitance
C
ob
8
CLASSIFICATION OF
h
FE
Rank
L
H
J
Range
120-200
200-350
J3
300-400
Marking
1
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
S9013
BIPOLAR TRANSISTOR (NPN)
Typical Characteristics
h
FE
—— I
C
Static Characteristic
100
1000
COMMON EMITTER
V
CE
=1V
COMMON
EMITTER
T
a
=25
℃
400uA
80
T
a
=100
℃
T
a
=25
℃
350uA
300uA
60
250uA
100
200uA
40
20
0
150uA
100uA
I
B
=50uA
10
1
3
10
30
100
500
0
4
8
12
16
20
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
I
C
V
BEsat
——
V
CEsat
—— I
C
1.2
500
300
T
a
=25
℃
0.8
0.4
100
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
10
β
=10
β
=10
0.0
30
10
500
3
1
3
10
30
100
1
100
500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
——
V
CB
/ V
EB
100
100
COMMON EMITTER
V
CE
=1V
f=1MHz
I
E
=0/ I
C
=0
30
10
T
a
=25
℃
C
ib
30
10
T
a
=100
℃
C
ob
3
1
T
a
=25
℃
3
1
0.3
0.1
0.1
0.3
1
3
10
20
0.0
0.2
0.4
0.6
0.8
1.0
REVERSE VOLTAGE
V
(V)
BASE-EMMITER VOLTAGE
V
BE
(V)
P
C
—— T
a
f
T
—— I
C
1000
400
V
CE
=6V
T
a
=25
℃
300
200
100
0
300
100
10
10
30
100
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
S9013
BIPOLAR TRANSISTOR (NPN)
SOT-23 Package
Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
Max.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min.
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
Max.
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
0.950 TYP
0.550 R
E
F
0.037 TYP
0.022 REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
SOT-23 Suggested Pad Layout
Note:
1.Controlling dimension: in millimeters
2.General tolerance: ±0.05mm
3.The pad layout is for reference purposes only
3
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
S9013
BIPOLAR TRANSISTOR (NPN)
SOT-23 Tape
and Reel
SOT-23 Embossed Carrier Tape
DIMENSIONS ARE IN MILLIMETER
TYPE
A
B
C
d
E
F
P0
P
P1
W
SOT-23
3.15
±0.1
2.77
±0.1
1.22
±0.1
Ø1.50
±0.1
1.75
±0.1
3.50
±0.1
4.00
±0.1
4.00
±0.1
2.00
±0.1
8.00
±0.1
TOLERANCE
SOT-23 Tape Leader and Trailer
SOT-23 Reel
DIMENSIONS ARE IN MILLIMETER
REEL OPTION
7’’ DIA
D
Ø178
±2
D1
54.40
±1
D2
13.00
±1
G
R78
±1
H
R25.60
±1
I
W1
W2
R6.50
±1
9.50
±1
12.30
±1
TOLERANCE
4
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4
SHENZHEN HOTTECH ELECTRONICS CO.,LTD
©
