Guangdong-Hottech-SI2307

Plastic-Encapsulate Mosfets  

FEATURES  

HOA2307  

P-Channel MOSFET  

Lower on-resistance  

Reliable and Rugged  

Absolute Maximum Ratings (TA=25

o

C, unless otherwise noted)  

Parameter  

Symbol Ratings  

Unit  

V

V

DS  

V

GS  

I

D  

Drain-Source

V

o

ltage  

-30  

20  

1.Gate  

2.Source  

Gate-source

V

o

ltage  

V

SOT-23  

Drain Current (Continuous)

a  

Total Power Dissipation

=25

o

C  

-2.7  

1.1  

A

3.Drain  

b

P

D  

W

T

j,

T

stg

-55 to +150  

R

θJA  

Operating Junction and Storage Temperature Range  

°C  

Thermal Resistance Junction to Ambient (PCB mounted)  

114  

°C/W  

Electrical Characteristics (TA=25°C, unless otherwise noted)  

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

Static  

Drain-Source Breakdown Voltage  

Gate-Source Threshold Voltage  

Gate-Source Leakage  

V

(BR)DSS  

V

GS(th)  

I

GSS  

V

GS

= 0V, I

D

=-250µA  

V

DS

=V

GS

, I

D

=-250µA  

V

DS

=0V, V

GS

=±20V  

V

DS

=-30V, V

GS

=0V  

-30  

-1  

V

-3  

±100  

-1  

nA  

µA  

Zero Gate Voltage Drain Current  

Drain-Source On-State Resistance

c  

I

DSS  

-10  

V

DS

=-30V, V

GS

=0V,

T

J

=55

℃

 

V

GS

=-4.5V, I

D

=-2.5A  

V

GS

=-10V, I

D

=-3.5A  

0.110  

0.073  

7

0.138  

0.088  

R

DS(on)  

g

fs  

Ω

Forward Transconductance

c  

Dynamic

d  

V

DS

=-10V, I

D

=-3.5A  

S

Input Capacitance  

C

iss  

C

oss  

C

rss  

Q

g  

340  

67  

V

DS

=-15V,V

GS

=0V,f =1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

Gate Resistance  

51  

4.1  

1.3  

1.8  

10  

6.2  

V

DS

=-15V,V

GS

=-4.5V,  

I

D

=-2.5A  

nC  

Q

gs  

Q

gd  

R

g  

f =1MHz  

Ω

Page:P3-P1  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Mosfets  

HOA2307  

Turn-On Delay Time  

t

d(on)  

t

r  

t

d(off)  

t

f  

40  

40  

20  

17  

60  

60  

40  

30  

V

DD

=-15V,  

Rise Time  

R

L

=15

Ω

,

I

D

=-1A,  

ns  

V

Turn-Off Delay Time  

V

GEN

=-4.5V,Rg=1

Ω  

Fall Time  

Drain-source Body diode characteristics  

-1.2  

Body Diode Voltage  

V

SD  

I

S

=-0.75A, ,V

GS

=0  

-0.8  

Notes:  

a. t=5s.  

b. Surface mounted on 1” ×1” FR4 board.  

c. Pulse

T

e

st : Pulse Width < 300µs, Duty Cycle

≤

2%.  

d. Guaranteed by design, not subject to production testing.  

Page:P3-P2  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD  

Plastic-Encapsulate Mosfets  

Typical Characteristics  

HOA2307  

Output Characteristics  

Transfer Characteristics  

-20  

-10  

-8  

V

GS

=-10V,-8V,-6V  

T

a

=25  

℃

T

a

=25  

℃

Pulsed  

Pulsed  

V

GS

=-4.5V  

-16  

-12  

-8  

V

GS

=-4.0V  

V

GS

=-3.5V  

-6  

-4  

V

GS

=-3.0V  

-4  

-2  

-0  

-0  

-0  

-1  

-2  

-3  

-4  

-5  

-0  

-1  

-2  

-3  

-4  

-5  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

DRAIN TO SOURCE VOLTAGE

 

V

DS

(V)  

R

DS(ON)

—— I

D  

R

DS(ON)

—— V

GS  

300  

250  

200  

150  

100  

50  

500  

400  

300  

200  

100  

0

T

a

=25  

℃

T

a

=25

℃

 

Pulsed  

Pulsed  

V

GS

=-4.5V  

I

D

=-3.5A  

V

GS

=-10V  

-0  

-4  

-8  

-12  

-16  

-20  

-0  

-4  

-8  

-12  

-16  

-20  

DRAIN CURRENT

 

I

D

(A)  

GATE TO SOURCE VOLTAGE

 

V

GS

(V)  

I

S

—— V

SD  

-10  

T

a

=25

℃  

Pulsed  

-1  

-0.1  

-0.01  

-0.0  

-0.3  

-0.6  

-0.9  

-1.2  

-1.5  

SOURCE TO DRAIN VOLTAGE

 

V

SD

(V)  

Page:P3-P3  

GUANGDONG HOTTECH INDUSTRIAL CO.,

 

LTD